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13 条记录 (耗时 0.029 秒)

    Source Multiplexing in Lithography
    3.
    发明申请
    Source Multiplexing in Lithography 审中-公开
    光刻中的光源多路复用

    公开(公告)号：US20070159611A1

    公开(公告)日：2007-07-12

    申请号：US11685646

    申请日：2007-03-13

    申请人： Michael Goldstein ,  Peter Silverman

    发明人： Michael Goldstein ,  Peter Silverman

    IPC分类号： G03B27/42

    CPC分类号： G03F7/7005 ,  G03F7/201

    摘要： An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

    摘要翻译： 用于极紫外（EUV）光刻系统的照明系统可以包括多个EUV光源。 当照射面罩时，系统可以组合来自多个源的光。

    Dual hemispherical collectors
    4.
    发明申请
    Dual hemispherical collectors 失效

    公开(公告)号：US20060237668A1

    公开(公告)日：2006-10-26

    申请号：US11411971

    申请日：2006-04-25

    申请人： Peter Silverman ,  Michael Goldstein

    发明人： Peter Silverman ,  Michael Goldstein

    IPC分类号： G21G5/00

    CPC分类号： G03F7/70175

    摘要： A system and method for collecting radiation, which may be used in a lithography illumination system. The system comprises a first surface shaped to reflect radiation in a first hemisphere of a source to illuminate in a second hemisphere of the source; and a second surface shaped to reflect radiation in the second hemisphere of the source to an output plane.

    Source multiplexing in lithography
    5.
    发明申请
    Source multiplexing in lithography 有权
    光刻中的光源复用

    公开(公告)号：US20050263724A1

    公开(公告)日：2005-12-01

    申请号：US11196231

    申请日：2005-08-02

    申请人： Michael Goldstein ,  Peter Silverman

    发明人： Michael Goldstein ,  Peter Silverman

    IPC分类号： G03F7/20 ,  G01J1/00

    CPC分类号： G03F7/7005 ,  G03F7/201

    摘要： An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

    摘要翻译： 用于极紫外（EUV）光刻系统的照明系统可以包括多个EUV光源。 当照射面罩时，系统可以组合来自多个源的光。

    User-preference-based DSL system
    6.
    发明申请
    User-preference-based DSL system 有权

    公开(公告)号：US20060280236A1

    公开(公告)日：2006-12-14

    申请号：US11342023

    申请日：2006-01-28

    申请人： Wonjong Rhee ,  John Cioffi ,  Georgios Ginis ,  Peter Silverman

    发明人： Wonjong Rhee ,  John Cioffi ,  Georgios Ginis ,  Peter Silverman

    IPC分类号： H04B1/38

    CPC分类号： H04L12/2856 ,  H04L12/2874 ,  H04L12/289 ,  H04L67/306 ,  H04L69/24 ,  H04M3/247 ,  H04M3/306 ,  H04M11/06 ,  H04M11/062

    摘要： Operator-controlled implementations of user preferences are provided when feasible. User preference data is obtained by the operator and compared to operational characteristics and parameters of a communication system, such as a DSL system, to determine whether one or more of the user preferences can be implemented in the communication system. When implementation of a user preference would violate operational rules of the system, or where implementation would adversely affect system operation, the preference need not be implemented. However, when a user preference can be implemented in the system without causing problems, the operator can implement (or permit another party to implement) the user preference to effect the user's desires. The user preference data can be obtained directly from users (for example, by surveys and other direct user feedback) or can be obtained indirectly (for example, by constructing a Hidden Markov Model that shows user preferences). The operator may collect the user preference data from a user set (for example, a single user or a plurality of users). The user preference data can be compared to 2 or more performance metrics that can be adjusted, to the extent feasible, to implement the user preference data.

    Multilayer coatings for EUV mask substrates
    7.
    发明申请
    Multilayer coatings for EUV mask substrates 有权
    用于EUV掩模基板的多层涂层

    公开(公告)号：US20050064298A1

    公开(公告)日：2005-03-24

    申请号：US10665416

    申请日：2003-09-18

    申请人： Peter Silverman

    发明人： Peter Silverman

    IPC分类号： C23C14/04 ,  C23C16/00 ,  G03F1/08 ,  G03F1/14 ,  G03F9/00 ,  G21K1/06 ,  G21K1/10 ,  G21K5/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/36 ,  C03C17/3636 ,  C03C17/3649 ,  C03C17/3665 ,  C03C2217/734 ,  G21K1/062 ,  G21K1/10

    摘要： Techniques, methods, and structures disclosed in relation to extreme ultraviolet (EUV) lithography in semiconductor processing. In one exemplary implementation, a method may comprise using ion beam deposition to deposit a first multilayer stack of thin films on a substrate to planarize and smooth surface defects on the substrate. The method includes using atomic layer deposition to deposit a second multilayer stack of thin films on the first multilayer stack of thin films. The second multilayer stack of thin films may comprise an extreme ultraviolet reflective multilayer stack. The second multilayer stack of thin films may comprise fewer surface defects than the first multilayer stack of thin films. The method may further comprise processing an extreme ultraviolet mask blank to form an extreme ultraviolet reflective mask.

    摘要翻译： 在半导体处理中与极紫外（EUV）光刻有关的技术，方法和结构。 在一个示例性实施方案中，方法可以包括使用离子束沉积在衬底上沉积薄膜的第一多层叠层，以平坦化和平滑衬底上的表面缺陷。 该方法包括使用原子层沉积在薄膜的第一多层堆叠上沉积第二多层薄膜。 第二层薄膜可以包括极紫外反射多层叠层。 薄膜的第二多层堆叠可以包括比第一多层薄膜更少的表面缺陷。 该方法还可以包括处理极紫外线掩模毛坯以形成极紫外反射掩模。

    Dsl System
    9.
    发明申请
    Dsl System 有权
    Dsl系统

    公开(公告)号：US20080298444A1

    公开(公告)日：2008-12-04

    申请号：US12089044

    申请日：2006-10-03

    申请人： John M. Cioffi ,  Wonjong Rhee ,  Georgios Ginis ,  Sumanth Jagannathan ,  Peter Silverman ,  Mehdi Mohseni

    发明人： John M. Cioffi ,  Wonjong Rhee ,  Georgios Ginis ,  Sumanth Jagannathan ,  Peter Silverman ,  Mehdi Mohseni

    IPC分类号： H04B1/38

    CPC分类号： H04L41/0823 ,  H04L41/0213 ,  H04L43/106 ,  H04M11/062

    摘要： Methods, techniques, computer program products, apparatus, devices, etc., used in connection with DSL Management Interfaces, significantly improve the management capabilities of a DSL network and/or improve testing relating to DSL equipment and services by permitting better control and operation of a DSL system, including implementation of timestamping for more accurate measurement, monitoring and control of a system. Timestamping further allows customized data collection techniques, where a DSL line can be measured or monitored at intervals whose frequency depends on the line's stability. Moreover, data parameter read and control parameter write operations are presented in conjunction with the use of timestamping. Also, control and operation of a DSL system is enhanced by implementing bit-loading that minimizes, eliminates or otherwise mitigates the amount by which the SNR margin per tone exceeds a maximum SNR margin quantity, where such bit-loading can be selected through an appropriate interface.

    摘要翻译： 与DSL管理接口相关使用的方法，技术，计算机程序产品，设备，设备等，通过允许更好地控制和操作DSL设备和服务，显着提高DSL网络的管理能力和/或改进与DSL设备和服务相关的测试 DSL系统，包括执行时间戳以更准确地测量，监视和控制系统。 时间戳进一步允许定制的数据采集技术，其中可以以其频率取决于线路的稳定性的间隔来测量或监视DSL线路。 此外，数据参数读取和控制参数写入操作与使用时间戳一起呈现。 此外，DSL系统的控制和操作通过实现最小化，消除或以其它方式减轻每个音调的SNR余量超过最大SNR裕量的量的比特加载来增强，其中这种比特加载可以通过适当的 接口。

    Multilayer Coatings For EUV Mask Substrates
    10.
    发明申请
    Multilayer Coatings For EUV Mask Substrates 审中-公开
    用于EUV掩模底物的多层涂层

    公开(公告)号：US20080113303A1

    公开(公告)日：2008-05-15

    申请号：US11956248

    申请日：2007-12-13

    申请人： Peter Silverman

    发明人： Peter Silverman

    IPC分类号： G03F7/26 ,  C23C14/14

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/36 ,  C03C17/3636 ,  C03C17/3649 ,  C03C17/3665 ,  C03C2217/734 ,  G21K1/062 ,  G21K1/10

    摘要： Techniques, methods, and structures disclosed in relation to extreme ultraviolet (EUV) lithography in semiconductor processing. In one exemplary implementation, a method may comprise using ion beam deposition to deposit a first multilayer stack of thin films on a substrate to planarize and smooth surface defects on the substrate. The method includes using atomic layer deposition to deposit a second multilayer stack of thin films on the first multilayer stack of thin films. The second multilayer stack of thin films may comprise an extreme ultraviolet reflective multilayer stack. The second multilayer stack of thin films may comprise fewer surface defects than the first multilayer stack of thin films. The method may further comprise processing an extreme ultraviolet mask blank to form an extreme ultraviolet reflective mask.

    摘要翻译： 在半导体处理中与极紫外（EUV）光刻有关的技术，方法和结构。 在一个示例性实施方案中，方法可以包括使用离子束沉积在衬底上沉积薄膜的第一多层叠层，以平坦化和平滑衬底上的表面缺陷。 该方法包括使用原子层沉积在薄膜的第一多层堆叠上沉积第二多层薄膜。 第二层薄膜可以包括极紫外反射多层叠层。 薄膜的第二多层堆叠可以包括比第一多层薄膜更少的表面缺陷。 该方法还可以包括处理极紫外线掩模毛坯以形成极紫外反射掩模。