公开(公告)号：US06534379B1

公开(公告)日：2003-03-18

申请号：US10051698

申请日：2002-01-18

申请人： Philip Fisher ,  Ming-Ren Lin ,  Matthew S. Buynoski

发明人： Philip Fisher ,  Ming-Ren Lin ,  Matthew S. Buynoski

IPC分类号： H01L2176

CPC分类号： H01L21/76264 ,  H01L21/76283

摘要： A method of making a semiconductor device and a method of isolation of active islands on a silicon-on-insulator semiconductor device, comprising the steps of providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric isolation layer and a silicon substrate, in which the silicon active layer is formed on the dielectric isolation layer and the dielectric isolation layer is formed on the silicon substrate; forming an isolation trench, the isolation trench defining an active island in the silicon active layer; rounding at least one corner in the active island by application of a high RF bias power high density plasma; and filling the isolation trench with a dielectric trench isolation material by application of a low RF bias power high density plasma. In one embodiment, the rounding step comprises application of a HDP under etching conditions, and the filling step comprises application of a HDP under deposition conditions.

摘要翻译： 一种制造半导体器件的方法以及在绝缘体上硅半导体器件上隔离有源岛的方法，包括以下步骤：提供具有硅有源层，介电隔离层和绝缘体隔离层的绝缘体上半导体晶片， 在硅衬底上形成硅介质隔离层上的硅有源层和电介质隔离层的硅衬底; 形成隔离沟槽，所述隔离沟槽在所述硅有源层中限定有源岛; 通过应用高RF偏置功率的高密度等离子体使活动岛中的至少一个角落四舍五入; 以及通过施加低RF偏置功率的高密度等离子体，用绝缘沟槽隔离材料填充隔离沟槽。 在一个实施例中，舍入步骤包括在蚀刻条件下施加HDP，并且填充步骤包括在沉积条件下施加HDP。

公开(公告)号：US20090179283A1

公开(公告)日：2009-07-16

申请号：US11954918

申请日：2007-12-12

申请人： Charlotte D. Adams ,  Bruce B. Doris ,  Philip Fisher ,  William K. Henson ,  Jeffrey W. Sleight

发明人： Charlotte D. Adams ,  Bruce B. Doris ,  Philip Fisher ,  William K. Henson ,  Jeffrey W. Sleight

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/4983 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823468 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/78

摘要： A semiconductor gate stack comprising a silicon oxide based gate dielectric and a doped semiconductor material is formed on a semiconductor substrate. A high-k material metal gate electrode comprising a high-k gate dielectric and a metal gate portion is also formed on the semiconductor substrate. Oxygen-impermeable dielectric spacers are formed on the sidewalls of the semiconductor gate stack and the high-k material metal gate stack. The oxygen-impermeable dielectric spacer on the semiconductor gate stack is removed, while the oxygen impermeable dielectric spacer on the high-k material metal gate electrode is preserved. A low-k dielectric spacer is formed on the semiconductor gate stack, which provides a low parasitic capacitance for the device employing the semiconductor gate stack.

摘要翻译： 包括基于氧化硅的栅极电介质和掺杂的半导体材料的半导体栅极堆叠形成在半导体衬底上。 还在半导体衬底上形成包括高k栅极电介质和金属栅极部分的高k材料金属栅电极。 在半导体栅极堆叠和高k材料金属栅极堆叠的侧壁上形成氧气不可渗透的电介质间隔物。 除去半导体栅极堆叠上的不透氧电介质间隔物，同时保留高k材料金属栅电极上的不透氧电介质间隔物。 在半导体栅极叠层上形成一个低k电介质隔离层，为采用半导体栅极堆叠的器件提供了低寄生电容。

公开(公告)号：US07258390B2

公开(公告)日：2007-08-21

申请号：US11099835

申请日：2005-04-06

申请人： Philip Fisher ,  Paul Freeman

发明人： Philip Fisher ,  Paul Freeman

IPC分类号： B60P3/335

CPC分类号： B60P3/341

摘要： A camping trailer adapted for towing behind a motor vehicle comprising a body divided into a sleeping portion, a kitchen portion, and a bathroom portion, wherein the bathroom portion is substantially located over a forward “A” shaped towing frame of the trailer.

摘要翻译： 一种用于在机动车辆后方牵引的露营拖车，包括分为睡眠部分，厨房部分和浴室部分的主体，其中所述浴室部分基本上位于所述拖车的前进“A”形牵引框架之上。

公开(公告)号：US08523219B2

公开(公告)日：2013-09-03

申请号：US13260208

申请日：2010-02-02

申请人： Paul Freeman ,  Philip Fisher

发明人： Paul Freeman ,  Philip Fisher

IPC分类号： B62B1/00

CPC分类号： B62B3/027 ,  B62B3/106

摘要： A trolley having a base section with ground engaging parts adapted to move between a collapsed condition into a deployed condition to provide a stable base for the trolley, the ground engaging parts are interconnected for synchronised movement and an upper section that connectively extends above the base section including a coupling intermediate the upper section and base section such that the upper section and base section have synchronised movement and an actuator operatively connected thereto, wherein the motion of the actuator causes the ground engaging parts to move between the collapsed and deployed condition.

摘要翻译： 具有基部的手推车具有地面接合部分，其适于在折叠状态之间移动到展开状态以为手推车提供稳定的基座，地面接合部分互连用于同步运动，并且上部部分在基部上方连接地延伸 包括在上部和底部之间的耦合，使得上部和底部具有同步的运动和与其可操作地连接的致动器，其中致动器的运动导致地面接合部在折叠和展开状态之间移动。

公开(公告)号：US20060066071A1

公开(公告)日：2006-03-30

申请号：US11100771

申请日：2005-04-07

申请人： Philip Fisher ,  Paul Freeman

发明人： Philip Fisher ,  Paul Freeman

IPC分类号： B60R3/00

CPC分类号： B60P3/341

摘要： A bathroom module arrangement for a trailer adapted for towing behind a motor vehicle and for positioning substantially on a forward “A” frame part of a chassis of said trailer.

摘要翻译： 一种用于拖车的浴室模块装置，其适于拖动机动车辆后方并且基本上定位在所述拖车的底盘的前部“A”框架部分上。

公开(公告)号：US06521510B1

公开(公告)日：2003-02-18

申请号：US10105998

申请日：2002-03-25

申请人： Philip Fisher ,  Darin A. Chan

发明人： Philip Fisher ,  Darin A. Chan

IPC分类号： H01L2176

CPC分类号： H01L21/76264 ,  H01L21/76283

摘要： A method of isolation of active islands on a silicon-on-insulator semiconductor device, including steps of (1) providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric insulation layer and a silicon substrate; (2) etching through the silicon active layer to form an isolation trench, the isolation trench defining an active island in the silicon active layer, the active island having at least one upper sharp corner; (3) rounding the at least one upper sharp corner of the active island, whereby at least one strained edge portion of the active island is formed; (4) removing at least a part of the at least one strained edge portion; and (5) at least partially filling the isolation trench with a dielectric trench isolation material to form a shallow trench isolation structure. An SOI wafer semiconductor device having a STI isolation structure free from a strained edge portion and a bird's beak.

摘要翻译： 一种隔离绝缘体上半导体器件上的有源岛的方法，包括以下步骤：（1）提供具有硅有源层，介电绝缘层和硅衬底的绝缘体上硅半导体晶片; （2）蚀刻穿过硅有源层以形成隔离沟槽，隔离沟槽在硅有源层中限定有源岛，活性岛具有至少一个上尖锐角; （3）对活性岛的至少一个上尖锐角进行四舍五入，由此形成活性岛的至少一个应变边缘部分; （4）去除所述至少一个应变边缘部分的至少一部分; 和（5）用绝缘沟槽隔离材料至少部分地填充隔离沟槽以形成浅沟槽隔离结构。 具有没有应变边缘部分和鸟喙的STI隔离结构的SOI晶片半导体器件。

公开(公告)号：US20070262611A1

公开(公告)日：2007-11-15

申请号：US11746728

申请日：2007-05-10

申请人： Paul Freeman ,  Philip Fisher

发明人： Paul Freeman ,  Philip Fisher

IPC分类号： B60P3/335

CPC分类号： B60P3/341

摘要： A camper trailer or caravan (10) includes a chassis (12) adapted to be attached to, and towed behind a motor vehicle (11). A housing (21) is mounted on the chassis (12) and defines a main chamber including a peripheral wall. The chassis (12) is short in length and about the same width as the towing vehicle (11) with the wheels (19) located adjacent the rear end of the chassis (12), and the housing (21) is adapted be opened such that panels (41) folded inside the housing when in the closed configuration are adapted to form annex chambers (42, 43) when in the open configuration when the camper trailer (10) is being used for camping and the like. A sleeping chamber (23) associated with the main chamber extends outside the peripheral walls of said camper trailer when required. Preferably there is a kitchen chamber and a bedding chamber within the housing of the camper trailer.

摘要翻译： 露营车拖车或大篷车（10）包括适于附接到车辆（11）后面并被牵引的机箱（12）。 壳体（21）安装在底盘（12）上并且限定包括周壁的主室。 底盘（12）的长度和拖曳车辆（11）的宽度相同，车轮（19）位于底盘（12）的后端附近，并且壳体（21）适于打开 当处于闭合状态时折叠在壳体内的面板（41）适于当露营拖车（10）用于露营等时处于打开状态时形成附属室（42,43）。 当需要时，与主室相关联的休眠室（23）在所述露营车拖车的周围壁外延伸。 优选地，在露营车拖车的壳体内设有厨房和卧室。

公开(公告)号：US20070052511A1

公开(公告)日：2007-03-08

申请号：US11210989

申请日：2005-08-24

申请人： Alvin Loke ,  Philip Fisher ,  Robert Martin

发明人： Alvin Loke ,  Philip Fisher ,  Robert Martin

IPC分类号： H01F5/00

CPC分类号： H03H5/12 ,  H01F27/40 ,  H01F2017/0026 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03B5/1212 ,  H03B5/1228 ,  H03B5/124 ,  H03B5/1841 ,  H01L2924/00

摘要： Cross-coupled first and second helical inductors formed in an IC. The cross-coupled first and second helical inductors comprise a first helical conductor having a first portion and a second portion, and a second helical conductor having a first portion and a second portion. The second helical conductor is in close proximity to the first helical conductor. The first helical inductor is formed by the first portion of the first helical conductor and the second portion of the second helical conductor. The second helical inductor is formed by the second portion of the first helical conductor and the first portion of the second helical conductor.

摘要翻译： 在IC中形成的交叉耦合的第一和第二螺旋电感器。 交叉耦合的第一和第二螺旋电感器包括具有第一部分和第二部分的第一螺旋形导体和具有第一部分和第二部分的第二螺旋形导体。 第二螺旋导体紧邻第一螺旋导体。 第一螺旋电感器由第一螺旋导体的第一部分和第二螺旋导体的第二部分形成。 第二螺旋电感器由第一螺旋导体的第二部分和第二螺旋导体的第一部分形成。

公开(公告)号：US20050225116A1

公开(公告)日：2005-10-13

申请号：US11099835

申请日：2005-04-06

申请人： Philip Fisher ,  Paul Freeman

发明人： Philip Fisher ,  Paul Freeman

IPC分类号： B60P3/34 ,  B60P3/35

CPC分类号： B60P3/341

摘要： A camping trailer adapted for towing behind a motor vehicle comprising a body divided into a sleeping portion, a kitchen portion, and a bathroom portion, wherein the bathroom portion is substantially located over a forward “A” shaped towing frame of the trailer.

摘要翻译： 一种用于在机动车辆后方牵引的露营拖车，包括分为睡眠部分，厨房部分和浴室部分的主体，其中所述浴室部分基本上位于所述拖车的前进“A”形牵引框架之上。

公开(公告)号：US20050020019A1

公开(公告)日：2005-01-27

申请号：US10922093

申请日：2004-08-19

申请人： Douglas Bonser ,  Marina Plat ,  Chih Yang ,  Scott Bell ,  Srikanteswara Dakshina-Murthy ,  Philip Fisher ,  Christopher Lyons

发明人： Douglas Bonser ,  Marina Plat ,  Chih Yang ,  Scott Bell ,  Srikanteswara Dakshina-Murthy ,  Philip Fisher ,  Christopher Lyons

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/10 ,  H01L21/3205

CPC分类号： H01L29/66477 ,  H01L21/28123 ,  H01L29/1045 ,  H01L29/1054 ,  H01L29/665

摘要： To reduce the width of a MOSFET gate, the gate is formed with a hardmask formed thereupon. An isotropic etch is then performed to trim the gate in order to reduce the width of the gate. The resulting gate may be formed with a width that is narrower than a minimum width achievable solely through conventional projection lithography techniques.

摘要翻译： 为了减小MOSFET栅极的宽度，栅极形成有在其上形成的硬掩模。 然后执行各向同性蚀刻以修剪栅极，以便减小栅极的宽度。 所得到的栅极可以形成为比仅通过常规投影光刻技术可实现的最小宽度窄的宽度。