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    NANOSCALE FAULT ISOLATION AND MEASUREMENT SYSTEM
    1.
    发明申请
    NANOSCALE FAULT ISOLATION AND MEASUREMENT SYSTEM 有权
    NANOSCALE故障分离和测量系统

    公开(公告)号：US20070222456A1

    公开(公告)日：2007-09-27

    申请号：US11164654

    申请日：2005-11-30

    申请人： Philip Kaszuba ,  Theodore Levin ,  David Vallett

    发明人： Philip Kaszuba ,  Theodore Levin ,  David Vallett

    IPC分类号： H01H31/02

    CPC分类号： G01R1/06705 ,  G01R1/0466 ,  G01R31/2844 ,  G01R31/2886

    摘要： Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a device or material. The system further uses a multi-probe assembly. Each probe is mounted to a support structure around a common reference point and is a component of a different measurement or fault isolation tool. The assembly moves such that each probe can obtain measurements from the same fixed location on the device or material. The relative positioning of the support structure and/or the holder can be changed in order to obtain measurements from multiple same fixed locations within the area. Additionally, the system uses a processor for providing layered images associated with each signal and for precisely aligning those images with design data in order to characterize, or isolate fault locations within the device or material.

    摘要翻译： 公开了一种在公共平台上提供多个近场扫描隔离技术的故障隔离和测量系统。 该系统包括使用专门的保持器来为位于设备或材料的区域内的内部电路结构提供电偏压。 该系统还使用多探头组件。 每个探头安装在围绕公共参考点的支撑结构上，并且是不同测量或故障隔离工具的组件。 组件移动使得每个探针可以从设备或材料上的相同固定位置获得测量值。 可以改变支撑结构和/或保持器的相对定位，以便从区域内的多个相同的固定位置获得测量值。 此外，该系统使用处理器来提供与每个信号相关联的分层图像，并且用于将这些图像与设计数据精确对准，以便表征或隔离设备或材料内的故障位置。

    APPARATUS AND METHOD FOR SELECTED SITE BACKSIDE UNLAYERING OF SILICON, GAAS, GAXALYASZ OF SOI TECHNOLOGIES FOR SCANNING PROBE MICROSCOPY AND ATOMIC FORCE PROBING CHARACTERIZATION
    2.
    发明申请
    APPARATUS AND METHOD FOR SELECTED SITE BACKSIDE UNLAYERING OF SILICON, GAAS, GAXALYASZ OF SOI TECHNOLOGIES FOR SCANNING PROBE MICROSCOPY AND ATOMIC FORCE PROBING CHARACTERIZATION 有权
    用于扫描探针显微镜和原子力探测特征的SOI技术的硅，GAAS，GAXALYASZ的选择场所的背景设备和方法

    公开(公告)号：US20070010097A1

    公开(公告)日：2007-01-11

    申请号：US11160667

    申请日：2005-07-05

    申请人： Andrew Deering ,  Terence Kane ,  Philip Kaszuba ,  Leon Moszkowicz ,  Carmelo Scrudato ,  Michael Tenney

    发明人： Andrew Deering ,  Terence Kane ,  Philip Kaszuba ,  Leon Moszkowicz ,  Carmelo Scrudato ,  Michael Tenney

    IPC分类号： H01L21/302

    CPC分类号： H01J37/3056 ,  H01J2237/16 ,  H01J2237/31749

    摘要： Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.

    摘要翻译： 用于在半导体工件中曝光和探测特征的装置包括中空聚焦器，用于将通过气体导管连接的工件的一部分覆盖到蚀刻剂气体的供应。 舞台支撑并定位半导体工件。 控制装置依次将平台和半导体工件移动到一系列位置。 在存在蚀刻剂气体的情况下，能量束源将聚焦能量束通过穿过浓缩器的孔引导到工件表面上的区域上。 控制装置将台架相对于集中器和能量束移动到一系列位置，以在存在蚀刻剂气体的情况下引导能量束，以暴露位于中空内部的半导体工件表面上的一系列区域 集中器的空间顺序。