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1.发明授权High silicon content monomers and polymers suitable for 193 nm bilayer resists 有权适用于193纳米双层抗蚀剂的高硅含量单体和聚合物公开(公告)号：US06444408B1
公开(公告)日：2002-09-03
申请号：US09514212
申请日：2000-02-28
申请人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
发明人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
IPC分类号： G03F7027
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
摘要翻译： 在193nm下透明的含硅基团的可聚合单体; 和烯键式不饱和基团。 来自这些单体的聚合物可以用于用化学放大的，辐射敏感的双层抗蚀剂形成亚100nm图像的方法。 双层抗蚀剂设置在基板上，并且包括（i）包含辐射敏感酸产生器和（ii）有机底层的顶部成像层。 双层抗蚀剂可用于集成电路的制造。
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公开(公告)号：US06653048B2
公开(公告)日：2003-11-25
申请号：US10138498
申请日：2002-05-06
申请人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
发明人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
IPC分类号： G03F7004
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
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公开(公告)号：USRE38282E1
公开(公告)日：2003-10-21
申请号：US09895624
申请日：2001-06-28
IPC分类号： G03F7004
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/111
摘要： The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.
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公开(公告)号：US5985524A
公开(公告)日：1999-11-16
申请号：US828921
申请日：1997-03-28
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/111
摘要： The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.
摘要翻译： 本发明涉及用化学放大的辐射敏感双层抗蚀剂形成双层抗蚀剂图像的方法。 双层抗蚀剂设置在基材上，并且包括（i）包含辐射敏感酸产生剂和具有酸可裂解的甲硅烷基乙氧基的乙烯基聚合物和（ii）有机底层的顶部成像层。 双层抗蚀剂用于集成电路的制造。
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公开(公告)号：US06277546B1
公开(公告)日：2001-08-21
申请号：US08345290
申请日：1994-11-28
申请人： Gregory Breyta , Nicholas Jeffries Clecak , William Dinan Hinsberg, III , Donald Clifford Hofer , Hiroshi Ito , Scott Arthur MacDonald , Ratnam Sooriyakumaran
发明人： Gregory Breyta , Nicholas Jeffries Clecak , William Dinan Hinsberg, III , Donald Clifford Hofer , Hiroshi Ito , Scott Arthur MacDonald , Ratnam Sooriyakumaran
IPC分类号： G03F726
CPC分类号： G03F7/168 , G03F7/0045 , G03F7/38
摘要： The present invention relates to an improved lithographic imaging process for use in the manufacture of integrated circuits. The process provides protection to the photoresist film from airborne chemical contaminants.
摘要翻译： 本发明涉及用于制造集成电路的改进的光刻成像方法。 该工艺为光致抗蚀剂膜提供了防止空气传播的化学污染物的保护。
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公开(公告)号：US6165673A
公开(公告)日：2000-12-26
申请号：US813245
申请日：1997-03-07
申请人： Gregory Breyta , Richard Anthony DiPietro , Donald Clifford Hofer , Hiroshi Ito , Robert David Allen , Juliann Opitz , Thomas I. Wallow
发明人： Gregory Breyta , Richard Anthony DiPietro , Donald Clifford Hofer , Hiroshi Ito , Robert David Allen , Juliann Opitz , Thomas I. Wallow
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/122 , Y10S430/126
摘要： The invention relates to a polymeric, radiation-sensitive resist composition comprising (i) iodonium sulfonate radiation sensitive acid generator; (ii) a polymer; and (iii) an acid labile compound.
摘要翻译： 本发明涉及一种聚合物，辐射敏感性抗蚀剂组合物，其包含（i）碘磺酸盐辐射敏感性酸产生剂; （ii）聚合物; 和（iii）酸不稳定化合物。
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公开(公告)号：US5776990A
公开(公告)日：1998-07-07
申请号：US31046
申请日：1993-03-11
申请人： James Lupton Hedrick , Donald Clifford Hofer , Jeffrey William Labadie , Robert Bruce Prime , Thomas Paul Russell
发明人： James Lupton Hedrick , Donald Clifford Hofer , Jeffrey William Labadie , Robert Bruce Prime , Thomas Paul Russell
CPC分类号： C08J9/26 , C08J2201/046
摘要： The present invention relates to an insulating foamed polymer having a pore size less than about 1000 .ANG. made from a copolymer comprising a matrix polymer and a thermally decomposable polymer by heating the copolymer above the decomposition temperature of the decomposable polymer.
摘要翻译： 本发明涉及一种由含有基质聚合物和可热分解聚合物的共聚物制成的孔径小于约1000的绝缘发泡聚合物，该聚合物通过将共聚物加热至高于可分解聚合物的分解温度。
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