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    Method of forming high purity metal silicides targets for sputtering
    1.
    发明授权
    Method of forming high purity metal silicides targets for sputtering 失效
    形成用于溅射的高纯度金属硅化物靶的方法

    公开(公告)号：US5055246A

    公开(公告)日：1991-10-08

    申请号：US643490

    申请日：1991-01-22

    申请人： Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

    发明人： Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

    IPC分类号： C23C14/34 ,  C23C16/42 ,  H01L21/28 ,  H01L21/285

    CPC分类号： C23C14/3414 ,  C23C16/42

    摘要： The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.

    Method of forming a thin copper film by low temperture CVD
    2.
    发明授权
    Method of forming a thin copper film by low temperture CVD 失效
    通过低温CVD形成薄铜膜的方法

    公开(公告)号：US5091209A

    公开(公告)日：1992-02-25

    申请号：US596001

    申请日：1990-10-11

    申请人： Pierre Claverie ,  Masao Kimura ,  Juichi Arai ,  Pierre Jalby

    发明人： Pierre Claverie ,  Masao Kimura ,  Juichi Arai ,  Pierre Jalby

    IPC分类号： C23C16/08 ,  C23C16/14 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  H01L21/3205

    CPC分类号： C23C16/4488 ,  C23C16/08 ,  C23C16/14 ,  C23C16/452

    摘要： A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

    摘要翻译： 通过（a）形成含有卤化铜的气流，然后将所述气流引入具有本文配置的加热的催化金属细丝的CVD反应室中，（b）将氢气引入到 CVD反应室，用于通过加热的催化金属丝激活所述氢气，以及（c）在步骤（a）中引入的气流中包含的卤化铜与步骤（a）中激活的氢气之间的反应 布置在CVD反应室内的基板的表面，以便在基板表面上沉积铜的薄铜膜。