公开(公告)号：US20090062869A1

公开(公告)日：2009-03-05

申请号：US12199955

申请日：2008-08-28

申请人： Frederic Pierre Claverie ,  Christopher Plaskos

发明人： Frederic Pierre Claverie ,  Christopher Plaskos

IPC分类号： A61B17/04 ,  A61B17/08

CPC分类号： A61B90/50 ,  A61B17/122 ,  A61B2090/3983

摘要： In one embodiment, a device for fixing a first object to a second object during a navigated surgery includes a body; a pair of articulating arms that are pivotally connected to the body; and a pair of deformable, elastic components that are detachably coupled to an inner face of the articulating arms so as to permit removal and replacement of the components relative to the articulating arms. An exposed surface of the elastic components is intended to contact the second object to permit the device to be securely attached to the second object.

摘要翻译： 在一个实施例中，用于在导航手术期间将第一物体固定到第二物体的装置包括主体; 枢转地连接到主体的一对铰接臂; 以及一对可变形的弹性部件，其可拆卸地联接到所述关节臂的内表面，以便允许部件相对于所述铰接臂的移除和更换。 弹性部件的暴露表面旨在接触第二物体以允许装置牢固地附接到第二物体。

公开(公告)号：US5433372A

公开(公告)日：1995-07-18

申请号：US995537

申请日：1992-12-22

申请人： Sylvie Mellul ,  Pierre Claverie

发明人： Sylvie Mellul ,  Pierre Claverie

IPC分类号： H05K3/34 ,  B23K1/08 ,  B23K35/38 ,  B23K31/02

CPC分类号： B23K35/383 ,  B23K1/085

摘要： A solder composition is applied to the pins of an electronic component. The pins of the component are brought into contact with solder at a soldering station having a bath exposed to a controlled atmosphere of low oxygen content maintained in a hood enclosing at least the surface of the bath. The controlled atmosphere is comprised of at least one neutral gas and a gaseous silicon hydride whose content is between 50.times.10.sup.-6 and 2.times.10.sup.-3 of the volume of the controlled atmosphere. The controlled atmosphere is produced:a) by introducing into the hood the neutral gas to bring the residual oxygen content to less than 200 ppm, thenb) by introducing into the hood the neutral gas and the silicon hydride with a content greater than four times the residual oxygen content in the controlled atmosphere, at the end of step a).

摘要翻译： 将焊料组合物施加到电子部件的销上。 在具有暴露于至少包围浴表面的罩中的低氧含量的受控气氛的焊接站的焊接站处，使部件的销与焊料接触。 受控气氛由至少一种中性气体和含量在受控气氛体积的50×10 -6和2×10 -3之间的气态氢化硅组成。 产生受控气氛：a）通过将中性气体引入发动机罩中以使残余氧含量低于200ppm，然后b）通过将中性气体和含量大于四倍的氢化硅引入罩中 在步骤a）结束时，受控气氛中的残余氧含量。

公开(公告)号：US5230847A

公开(公告)日：1993-07-27

申请号：US718984

申请日：1991-06-21

申请人： Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

发明人： Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

IPC分类号： C23C16/01 ,  C23C16/14 ,  C23C16/42

CPC分类号： C23C16/42 ,  C23C16/01 ,  C23C16/14 ,  Y10T29/49982

摘要： The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.

公开(公告)号：US5055246A

公开(公告)日：1991-10-08

申请号：US643490

申请日：1991-01-22

申请人： Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

发明人： Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

IPC分类号： C23C14/34 ,  C23C16/42 ,  H01L21/28 ,  H01L21/285

CPC分类号： C23C14/3414 ,  C23C16/42

摘要： The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.

公开(公告)号：US5279867A

公开(公告)日：1994-01-18

申请号：US912653

申请日：1992-07-09

申请人： Jean-Marie Friedt ,  Pierre Claverie ,  Jeome Perrin

发明人： Jean-Marie Friedt ,  Pierre Claverie ,  Jeome Perrin

IPC分类号： F04B1/04 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/48 ,  F03C1/247 ,  F04B1/10 ,  B05D3/06 ,  C23C16/00

CPC分类号： C23C16/482 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  Y02T50/67

摘要： A process for producing a deposit of an inorganic and amorphous protective coating on an organic polymer substrate, the coating comprising compounds in the form of an oxide, nitride, carbide, or alloys thereof, by photosensitized decomposition in the gas phase, which comprises decomposing a gas medium by photosensitized decomposition, including precursors of the elements constituting the deposit of the inorganic and amorphous protective coating to be produced by photonic excitation of an impurity which has been previously introduced into the medium, said decomposition being adapted for producing an indirect transfer of energy to the molecules of the medium, thereby causing the decomposition and subsequent deposition of the these elements onto the substrate.

摘要翻译： 一种用于在有机聚合物基底上产生无机和无定形保护涂层的沉积物的方法，该涂层包含氧化物，氮化物，碳化物或其合金形式的化合物，通过气相中的光敏分解，其包括将 气体介质通过光敏化分解，包括构成无机和无定形保护涂层沉积的元素的前体，其通过先前已经引入介质中的杂质的光子激发而产生，所述分解适于产生能量的间接转移 到介质的分子，从而导致这些元素的分解和随后的沉积到基底上。

公开(公告)号：US5207839A

公开(公告)日：1993-05-04

申请号：US777676

申请日：1991-10-15

申请人： Pierre Claverie ,  Eric Duchateau ,  Pierre Karinthi ,  Philippe Queille

发明人： Pierre Claverie ,  Eric Duchateau ,  Pierre Karinthi ,  Philippe Queille

IPC分类号： C21D1/76

CPC分类号： C21D1/76 ,  Y02P10/122

摘要： Substantially all residual oxidizing gas in a treating atmosphere which is inert or reducing, is eliminated by injecting into the atmosphere a gaseous silicon hydride at a temperature between 50 and 1,600.degree. C. and in amount such that the ratio R of the content of hydride to the content of oxidizing gas to be eliminated is within the range of 1.5 to 20. The rapid action of the trace amounts of hydride injected enables one to control with precision heat treatment processes by maintaining the residual oxidizing gas contents below predetermined very low thresholds.

摘要翻译： 惰性或还原性处理气氛中的基本上所有的残余氧化气体，通过在50〜1600℃的温度下向气氛中注入气态硅氢化物而消除，使得氢化物含量与 要排除的氧化气体的含量在1.5至20的范围内。注入的微量氢化物的快速作用使得能够通过将残余氧化气体含量保持在预定的非常低的阈值以下来进行精确的热处理过程。

公开(公告)号：US5091209A

公开(公告)日：1992-02-25

申请号：US596001

申请日：1990-10-11

申请人： Pierre Claverie ,  Masao Kimura ,  Juichi Arai ,  Pierre Jalby

发明人： Pierre Claverie ,  Masao Kimura ,  Juichi Arai ,  Pierre Jalby

IPC分类号： C23C16/08 ,  C23C16/14 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  H01L21/3205

CPC分类号： C23C16/4488 ,  C23C16/08 ,  C23C16/14 ,  C23C16/452

摘要： A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

摘要翻译： 通过（a）形成含有卤化铜的气流，然后将所述气流引入具有本文配置的加热的催化金属细丝的CVD反应室中，（b）将氢气引入到 CVD反应室，用于通过加热的催化金属丝激活所述氢气，以及（c）在步骤（a）中引入的气流中包含的卤化铜与步骤（a）中激活的氢气之间的反应 布置在CVD反应室内的基板的表面，以便在基板表面上沉积铜的薄铜膜。