公开(公告)号：US08728825B2

公开(公告)日：2014-05-20

申请号：US13417398

申请日：2012-03-12

Applicant: Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

Inventor： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC: G01N27/00

CPC classification number: G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

Abstract: A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

Abstract translation: GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响 磁层的磁致伸缩产生补偿横向磁各向异性。 通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

公开(公告)号：US08184399B2

公开(公告)日：2012-05-22

申请号：US12924416

申请日：2010-09-27

Applicant: Yan Wu ,  Moris Dovek ,  Zhigang Bai ,  Cherng-Chyi Han ,  Jiun-Ting Lee ,  Po-Kang Wang

Inventor： Yan Wu ,  Moris Dovek ,  Zhigang Bai ,  Cherng-Chyi Han ,  Jiun-Ting Lee ,  Po-Kang Wang

IPC: G11B5/127

CPC classification number: G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

Abstract translation: 制造具有可变厚度的锥形主极的垂直磁记录（PMR）头。 极的锥形部分在ABS尖端处，并且其可以由前缘或后缘处的斜面或两者形成。 锥形终止形成最大厚度的区域t1，其向近处延伸一定距离。 超过该最大厚度的区域t1，然后将极减小到恒定的最小厚度t2。 磁轭连接到恒定最小厚度的区域。 这个极设计需要更少的通量，因为它附着在磁轭上的磁极的较薄区域，而刚好在锥形ABS之前较厚的区域提供额外的磁通来驱动刚好在ABS之前的极点，因此高清晰度和场增益是 实现了，但边缘明显减少。

公开(公告)号：US20100232050A1

公开(公告)日：2010-09-16

申请号：US12381327

申请日：2009-03-11

Applicant: Erhard Schreck ,  Kowang Liu ,  Kouji Shimazawa ,  Po-Kang Wang

Inventor： Erhard Schreck ,  Kowang Liu ,  Kouji Shimazawa ,  Po-Kang Wang

IPC: G11B5/02

CPC classification number: G11B5/314 ,  G11B5/6088 ,  G11B2005/001 ,  G11B2005/0021

Abstract: A slider mounted TAMR (Thermal Assisted Magnetic Recording), DFH (Dynamic Flying Height) type read/write head using optical-laser generated surface plasmons in a small antenna to locally heat a magnetic medium, uses the same optical laser at low power to pre-heat the antenna. Maintaining the antenna at this pre-heated temperature, approximately 50% of its highest temperature during write operations, allows the DFH mechanism sufficient time to compensate for the thermal protrusion of the antenna at that lower temperature, so that thermal protrusion transients are significantly reduced when a writing operation occurs and full laser power is applied. The time constant for antenna protrusion is less than the time constant for DFH fly height compensation, so, without pre-heating, the thermal protrusion of the antenna due to absorption of optical radiation cannot be compensated by the DFH effect.

Abstract translation: 使用在小天线中使用光学激光产生的表面等离子体激光器来局部加热磁介质的TAMR（热辅助磁记录），DFH（动态飞行高度）型读/写头的滑块，以低功率使用相同的光学激光器 - 加热天线。 将天线维持在该预热温度下，在写入操作期间其最高温度的约50％允许DFH机构有足够的时间来补偿在该较低温度下的天线的热突起，使得热突起瞬变显着降低 发生写入操作并施加全激光功率。 天线突起的时间常数小于DFH飞行高度补偿的时间常数，因此，在没有预热的情况下，由于吸收光辐射而导致的天线热突起不能被DFH效应补偿。

公开(公告)号：US20100178715A1

公开(公告)日：2010-07-15

申请号：US12661365

申请日：2010-03-16

Applicant: Po-Kang Wang ,  Yimin Guo ,  Cheng T. Horng ,  Tai Min ,  Ru-Ying Tong

Inventor： Po-Kang Wang ,  Yimin Guo ,  Cheng T. Horng ,  Tai Min ,  Ru-Ying Tong

IPC: H01L21/336 ,  H01L21/8246

CPC classification number: H01L43/08

Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

公开(公告)号：US07588945B2

公开(公告)日：2009-09-15

申请号：US12012576

申请日：2008-02-04

Applicant: Tai Min ,  Po-Kang Wang

Inventor： Tai Min ,  Po-Kang Wang

IPC: H01L21/00

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607

Abstract: A process for manufacturing a random access memory cell, that is capable of storing multiple information states in a single physical bit, is described. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.

Abstract translation: 描述了能够在单个物理位中存储多个信息状态的随机存取存储器单元的制造过程。 基本结构将传统的MTJ与静磁耦合到MTJ的参考堆叠相结合。 MTJ以通常的方式读取，但是数据被写入并存储在参考堆栈中。 通过使用两个位线，自由层的磁化方向可以以小的增量改变每个独特的方向代表不同的信息状态。

公开(公告)号：US07499314B2

公开(公告)日：2009-03-03

申请号：US12002161

申请日：2007-12-14

Applicant: Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

Inventor： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC: G11C11/00

CPC classification number: G11C7/14 ,  G11C11/16

Abstract: An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

Abstract translation: MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。 位线与子阵列的每一列相关联。 耦合将位列对的位线连接到读出放大器的近端位置。 一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。 当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。 讨论了一种用于验证MRAM参考子阵列的编程的方法。

公开(公告)号：US07486545B2

公开(公告)日：2009-02-03

申请号：US11264587

申请日：2005-11-01

Applicant: Tai Min ,  Po-Kang Wang

Inventor： Tai Min ,  Po-Kang Wang

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C11/1675

Abstract: A memory element uses a conventional MTJ for reading purposes and a separate magnetic reference stack which is briefly heated while information is written into it. This information is then magnetostatically imposed on the MTJ's free layer which is located nearby. In this way the MTJ can be optimized for maximum dr/r while the reference stack can be optimized for optimum stability, since there is no half select problem. A process for manufacturing the memory element is also described.

Abstract translation: 存储元件使用传统的MTJ进行读取，另外一个单独的磁性参考堆栈在信息被写入时被短暂加热。 然后将该信息静磁施加在位于附近的MTJ自由层上。 以这种方式，MTJ可以针对最大dr / r进行优化，而参考堆可以优化以获得最佳稳定性，因为没有半选择问题。 还描述了用于制造存储元件的工艺。

公开(公告)号：US07466583B2

公开(公告)日：2008-12-16

申请号：US11331998

申请日：2006-01-13

Applicant: Tai Min ,  Po-Kang Wang

Inventor： Tai Min ,  Po-Kang Wang

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  H01L21/8246

CPC classification number: H01L27/228

Abstract: An MRAM cell is formed in two separate portions. A first portion, that includes a pinned layer, a tunneling barrier layer and first free layer part, is used to read the value of a stored bit of information. A second portion includes a second free layer part on which information is written and stored. The second free layer part is formed with a high aspect ratio cross-section that renders it strongly magnetically anisotropic and enables it to couple to the relatively isotropic first free layer through a magnetostatic interaction. This interaction aligns the magnetization of the first free layer part in an opposite direction to the magnetization of the second free layer part. The magnetic orientation of the first free layer part relative to that of its adjacent pinned layer determines the resistance state of the first cell portion and this resistance state can be read by passing a current through the first cell portion. Thus, in effect, the first cell portion becomes a remote sensing device for the magnetization orientation of the second free layer part.

Abstract translation: MRAM单元分成两部分形成。 使用包括被钉扎层，隧道势垒层和第一自由层部分的第一部分来读取存储的信息位的值。 第二部分包括其上写入和存储信息的第二自由层部分。 第二自由层部分形成有高纵横比的横截面，其使得其具有强烈的磁性各向异性，并使其能够通过静磁相互作用耦合到相对各向同性的第一自由层。 这种相互作用使第一自由层部分的磁化方向与第二自由层部分的磁化方向相反。 第一自由层部分相对于其相邻被钉扎层的磁取向确定第一单元部分的电阻状态，并且可以通过使电流通过第一单元部分来读取该电阻状态。 因此，实际上，第一单元部分成为用于第二自由层部分的磁化取向的遥感装置。

公开(公告)号：US20080266943A1

公开(公告)日：2008-10-30

申请号：US11789324

申请日：2007-04-24

Applicant: Hsu Kai Yang ,  Po-Kang Wang

Inventor： Hsu Kai Yang ,  Po-Kang Wang

IPC: G11C11/14

CPC classification number: G11C11/16

Abstract: A spin-torque MRAM array has MRAM cells arranged in rows and columns. Bit lines are connected to each of the MRAM cells on each column. Source select lines are connected to each MRAM cell of a pair of rows and are oriented orthogonally to the bit lines. Write lines are connected to the gate of the gating MOS transistor of each MRAM cell of the rows. The MRAM cells are written in a two step process with selected MRAM cells written to a first logic level (0) in a first step and selected MRAM cells written to a second logic level (1) in a second step. A second embodiment of the spin-torque MRAM array has the bit lines commonly connected together to receive the data and the source select lines commonly connected together to receive an inverse of the data for writing.

Abstract translation: 自旋扭矩MRAM阵列具有以行和列排列的MRAM单元。 位线连接到每列上的每个MRAM单元。 源选择线连接到一对行的每个MRAM单元并且与位线正交地定向。 写入线连接到行的每个MRAM单元的选通MOS晶体管的栅极。 MRAM单元以两步过程写入，在第一步骤中将所选MRAM单元写入第一逻辑电平（0），并在第二步骤中将所选择的MRAM单元写入第二逻辑电平（1）。 自旋扭矩MRAM阵列的第二实施例具有通常连接在一起的位线，以接收通常连接在一起的数据和源选择线，以接收用于写入的数据的倒数。

公开(公告)号：US07391594B2

公开(公告)日：2008-06-24

申请号：US11447174

申请日：2006-06-06

Applicant: Yen Fu ,  Ellis Cha ,  Po-Kang Wang ,  Hong Tian ,  Manuel Hernandez ,  Yaw-Shing Tang ,  Ben Hu

Inventor： Yen Fu ,  Ellis Cha ,  Po-Kang Wang ,  Hong Tian ,  Manuel Hernandez ,  Yaw-Shing Tang ,  Ben Hu

IPC: G11B5/60

CPC classification number: H05K3/3442 ,  B24B37/00 ,  B24D18/00 ,  G11B5/4853 ,  H05K1/0215 ,  H05K2201/10727 ,  Y02P70/613

Abstract: Apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.

Abstract translation: 呈现用于将滑块电耦合到地面的装置。 在一个实施例中，接合焊盘设置在与用于读/写信号的接合焊盘分开的滑块体的一侧上。 该单独的接合焊盘在滑块体内电耦合到要耦合到地面的部件。 设置在悬架上的单独的导体（例如，迹线，柔性电路等）可以通过金球接合电耦合到单独的接合焊盘。 导体也耦合到硬盘驱动装置中的接地（例如，经由前置放大器）。 使用分离的接合焊盘和迹线可能会使得不需要使用导电粘合剂来将滑块经由其附接件电连接到滑块的舌部。