公开(公告)号：US5477466A

公开(公告)日：1995-12-19

申请号：US362839

申请日：1994-12-22

申请人： Prabhakar P. Tripathi ,  Bruce Whitefield ,  Chi-Hung Wang

发明人： Prabhakar P. Tripathi ,  Bruce Whitefield ,  Chi-Hung Wang

IPC分类号： H01L21/302 ,  G03F1/08 ,  G06F17/50 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L23/522

CPC分类号： G06F17/5068 ,  G06F17/5081 ,  H01L21/76816 ,  H01L21/76819 ,  H01L21/76838 ,  H01L23/522 ,  H01L2924/0002

摘要： A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.

公开(公告)号：US5379233A

公开(公告)日：1995-01-03

申请号：US732843

申请日：1991-07-19

申请人： Prabhakar P. Tripathi ,  Bruce Whitefield ,  Chi-Hung Wang

发明人： Prabhakar P. Tripathi ,  Bruce Whitefield ,  Chi-Hung Wang

IPC分类号： H01L21/302 ,  G03F1/08 ,  G06F17/50 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L23/522 ,  G06F15/60

CPC分类号： G06F17/5068 ,  G06F17/5081 ,  H01L21/76816 ,  H01L21/76819 ,  H01L21/76838 ,  H01L23/522 ,  H01L2924/0002

摘要： A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.

摘要翻译： 提供了半导体处理中的交互反馈的方法，其补偿光刻邻近效应，反应离子蚀刻负载效应，电迁移和由于分层引起的应力。

公开(公告)号：US5654897A

公开(公告)日：1997-08-05

申请号：US567288

申请日：1995-12-05

申请人： Prabhakar P. Tripathi ,  Bruce Whitefield ,  Chi-Hung Wang

发明人： Prabhakar P. Tripathi ,  Bruce Whitefield ,  Chi-Hung Wang

IPC分类号： H01L21/302 ,  G03F1/08 ,  G06F17/50 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L23/522

CPC分类号： G06F17/5068 ,  G06F17/5081 ,  H01L21/76816 ,  H01L21/76819 ,  H01L21/76838 ,  H01L23/522 ,  H01L2924/0002

摘要： A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.

摘要翻译： 提供了半导体处理中的交互反馈的方法，其补偿光刻邻近效应，反应离子蚀刻负载效应，电迁移和由于分层引起的应力。

公开(公告)号：US06893962B2

公开(公告)日：2005-05-17

申请号：US10400252

申请日：2003-03-27

申请人： Prabhakar P. Tripathi ,  Zhihai Wang ,  Weidan Li

发明人： Prabhakar P. Tripathi ,  Zhihai Wang ,  Weidan Li

IPC分类号： C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44

CPC分类号： H01L21/76846 ,  C23C14/025 ,  C23C14/0641 ,  C23C14/345 ,  H01L21/2855

摘要： A method of forming a metallization interconnection system within a via. A first liner layer of titanium is deposited to a first thickness in the following manner. A substrate containing the via is placed within an ion metal plasma deposition chamber that contains a titanium target. The ion metal plasma deposition chamber is evacuated to a first base pressure. A first flow of argon is introduced to the ion metal plasma deposition chamber at a first deposition pressure. The substrate is biased to a first voltage. A plasma within the ion metal plasma deposition chamber is energized at a first power for a first length of time. A second liner layer of TixNy is deposited to a second thickness on top of the first liner layer of titanium in the following manner. A first flow of nitrogen and a second flow of argon are introduced to the ion metal plasma deposition chamber at a second deposition pressure. The substrate is biased to a second voltage. The plasma within the ion metal plasma deposition chamber is energized at a second power for a second length of time, after which the substrate is removed from the ion metal plasma deposition chamber. Finally, a third liner layer of titanium nitride is deposited in a second deposition chamber, and a plug of tungsten is deposited.

摘要翻译： 在通孔内形成金属化互连系统的方法。 钛的第一衬里层以下列方式沉积到第一厚度。 将含有通孔的基板放置在含有钛靶的离子金属等离子体沉积室内。 将离子金属等离子体沉积室抽真空至第一基础压力。 在第一沉积压力下将第一氩气流引入离子金属等离子体沉积室。 衬底被偏压到第一电压。 离子金属等离子体沉积室内的等离子体在第一时间内以第一功率通电。 以下列方式将第二衬垫层的Ti x N y Y n沉积到钛的第一内衬层的顶部上的第二厚度。 在第二沉积压力下，将第一氮气流和第二氩气流引入离子金属等离子体沉积室。 衬底被偏压到第二电压。 离子金属等离子体沉积室内的等离子体以第二功率被施加第二时间长度，之后从离子金属等离子体沉积室中除去衬底。 最后，在第二沉积室中沉积氮化钛的第三衬里层，并沉积钨塞。

公开(公告)号：US6109775A

公开(公告)日：2000-08-29

申请号：US925021

申请日：1997-09-08

申请人： Prabhakar P. Tripathi ,  Keith Chao ,  Ratan K. Choudhury ,  Gauri C. Das ,  Nicholas K. Eib ,  Ashok K. Kapoor ,  Thomas G. Mallon

发明人： Prabhakar P. Tripathi ,  Keith Chao ,  Ratan K. Choudhury ,  Gauri C. Das ,  Nicholas K. Eib ,  Ashok K. Kapoor ,  Thomas G. Mallon

IPC分类号： H01L21/3105 ,  H01L21/768 ,  H01L23/522 ,  G06F17/00 ,  G06F17/50

CPC分类号： H01L21/76838 ,  H01L21/31053 ,  H01L21/76816 ,  H01L21/76819 ,  H01L23/522 ,  H01L2924/0002

摘要： Disclosed is the formation of additional lines, either dummy lines or active lines, in an electrically conductive pattern of lines to provide more uniform loading for either etching or chemical/mechanical polishing of a layer of electrically conductive material from which the pattern of lines is formed. Also disclosed is the use of additional or dummy vias to balance the loading during etching of the vias, as well as to provide stress relief for underlying metal in regions or areas having a low density of vias. Further disclosed is the use of a working grid on the integrated circuit structure to analyze the spacing of lines or vias for the above effects.

摘要翻译： 公开了在导电图案线中形成额外的线，虚拟线或有源线，以提供更均匀的负载，用于蚀刻或化学/机械抛光一层导电材料，从其形成线图案 。 还公开了使用额外的或虚拟的通孔来平衡通孔蚀刻期间的负载，以及为具有低密度通孔的区域或区域中的下面的金属提供应力释放。 还公开了在集成电路结构上使用工作网格以分析上述效应的线或通孔的间隔。

公开(公告)号：US5776831A

公开(公告)日：1998-07-07

申请号：US578118

申请日：1995-12-27

申请人： Gobi R. Padmanabhan ,  Prabhakar P. Tripathi

发明人： Gobi R. Padmanabhan ,  Prabhakar P. Tripathi

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L21/283

CPC分类号： H01L21/28512

摘要： A method of forming a metallization system in which ohmic contact is made to a silicon surface is described. A first layer of titanium is formed over the silicon surface. This first titanium layer is subsequently annealed in a nitrogen atmosphere to convert a first portion of the layer to a layer of titanium silicide, and a second portion to a first layer of titanium nitride. The titanium silicide layer provides for the formation of an ohmic contact between the metallization system and the silicon surface. The first titanium nitride layer provides for a degree of spike resistance between the silicon surface and the metallization system. A second layer of titanium nitride is formed over the first titanium nitride layer. This second titanium nitride layer provides further spike resistance between the silicon surface and the metallization system. A second titanium layer is then formed over the second titanium nitride layer, and acts to wet the surface of the second layer of titanium nitride, and aides in the flow of subsequently deposited layers across the second titanium nitride layer. An aluminum layer is formed over the second titanium layer, for providing a low ohmic resistance path for the flow of electrons through the metallization system. Finally, a third titanium nitride layer is formed over the aluminum layer.

摘要翻译： 描述了形成与硅表面欧姆接触的金属化系统的方法。 在硅表面上形成第一层钛。 随后将第一钛层在氮气气氛中退火，将该层的第一部分转化为硅化钛层，将第二部分转化为第一层氮化钛。 硅化钛层提供在金属化系统和硅表面之间形成欧姆接触。 第一氮化钛层在硅表面和金属化系统之间提供一定程度的尖峰电阻。 在第一氮化钛层上形成第二层氮化钛。 该第二氮化钛层在硅表面和金属化系统之间提供进一步的尖峰电阻。 然后在第二氮化钛层上形成第二钛层，并且用于将第二氮化钛层的表面以及随后沉积的层中的辅助材料浸在第二氮化钛层上。 在第二钛层上形成铝层，以提供用于电子流过金属化系统的低欧姆电阻路径。 最后，在铝层上形成第三氮化钛层。

公开(公告)号：US06569751B1

公开(公告)日：2003-05-27

申请号：US09617550

申请日：2000-07-17

申请人： Prabhakar P. Tripathi ,  Zhihai Wang ,  Weidan Li

发明人： Prabhakar P. Tripathi ,  Zhihai Wang ,  Weidan Li

IPC分类号： H01L2128

CPC分类号： H01L21/76846 ,  C23C14/025 ,  C23C14/0641 ,  C23C14/345 ,  H01L21/2855

摘要： A method of forming a metallization interconnection system within a via. A first liner layer of titanium is deposited to a first thickness in the following manner. A substrate containing the via is placed within an ion metal plasma deposition chamber that contains a titanium target. The ion metal plasma deposition chamber is evacuated to a first base pressure. A first flow of argon is introduced to the ion metal plasma deposition chamber at a first deposition pressure. The substrate is biased to a first voltage. A plasma within the ion metal plasma deposition chamber is energized at a first power for a first length of time. A second liner layer of TixNy is deposited to a second thickness on top of the first liner layer of titanium in the following manner. A first flow of nitrogen and a second flow of argon are introduced to the ion metal plasma deposition chamber at a second deposition pressure. The substrate is biased to a second voltage. The plasma within the ion metal plasma deposition chamber is energized at a second power for a second length of time, after which the substrate is removed from the ion metal plasma deposition chamber. Finally, a third liner layer of titanium nitride is deposited in a second deposition chamber, and a plug of tungsten is deposited.

摘要翻译： 在通孔内形成金属化互连系统的方法。 钛的第一衬里层以下列方式沉积到第一厚度。 将含有通孔的基板放置在含有钛靶的离子金属等离子体沉积室内。 离子金属等离子体沉积室被抽空到第一基础压力。 在第一沉积压力下将第一氩气流引入离子金属等离子体沉积室。 衬底被偏压到第一电压。 离子金属等离子体沉积室内的等离子体在第一时间内以第一功率通电。 TixNy的第二衬里层以下列方式沉积在钛的第一内衬层的顶部上的第二厚度上。 在第二沉积压力下，将第一氮气流和第二氩气流引入离子金属等离子体沉积室。 衬底被偏压到第二电压。 离子金属等离子体沉积室内的等离子体以第二功率被施加第二时间长度，之后从离子金属等离子体沉积室中除去衬底。 最后，在第二沉积室中沉积氮化钛的第三衬里层，并沉积钨塞。