摘要:
Disclosed is a network of systems that includes plural disparate storage systems that store user data, the disparate storage systems including NoSQL server databases that provide storage and retrieval of data modeled in forms besides tabular relations used in relational databases, and index storage system, a relational graph storage system and one or more data storage query platforms in communication with the plural disparate storage that have queries produced in a modeling language that abstracts application programmer functionality from network functionality.
摘要:
Computer implemented techniques for storage management include transforming file instances using a modeling language platform that includes a language grammar and a set of language processing rules to transform instances of an entity written in the language grammar into a platform independent code and artifact files and auto-generating by the modeling language platform code to recognize and process input in a given language to deconstruct file instances into pieces that allow further discrete operations to be performed on the file instances.
摘要:
Computer implemented techniques for storage management include receiving a query from an application within an application level, which is received as a standard syntax wrapped query language query, with the standard syntax wrapped query having as a parameter, an identifier to a specific object, determining a platform type on which the received query is executable and translating the standard syntax wrapped query language query into the determined native query language used by the determined data storage platform type.
摘要:
Computer implemented techniques for storage management include receiving a query from an application within an application level, which is received as a standard syntax wrapped query language query, with the standard syntax wrapped query having as a parameter, an identifier to a specific object, determining a platform type on which the received query is executable and translating the standard syntax wrapped query language query into the determined native query language used by the determined data storage platform type.
摘要:
A method and apparatus for profiling and identifying the source of a signal is provided. A first method includes receiving a signal produced by a known source and creating a matrix of wavelet coefficients corresponding to a wavelet transform of the signal. The method also includes profiling the signal according to an output of a wavelet transform utilizing a particular base function and a particular scale set. A second method includes performing a wavelet transform having a particular profile on a received signal and determining the presence of a particular signal-producing entity as a function of wavelet coefficients exceeding a threshold. An apparatus includes a receiver configured to receive a signal and a processor coupled to the receiver, such that the processor is configured to perform wavelet transforms on the signals. A database is coupled to the processor and configured to store wavelet transform profiles.
摘要:
A process may include forming a mask directly on and above a region selected as an initial semiconductor fin on a substrate and reducing the initial semiconductor fin forming a semiconductor fin that is laterally thinned from the initial semiconductor fin. The process may be carried out causing the mask to recede to a greater degree in the lateral direction than the vertical direction. In various embodiments, the process may include removing material from the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded mask. Electronic devices may include the thinned semiconductor fin as part of a semiconductor device.
摘要:
Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a substrate through a mask. The mask is formed by patterning a photoresist layer which simultaneously defines mask elements corresponding to features in the array, interface and periphery areas of the integrated circuit. The pattern is transferred to an amorphous carbon layer. Sidewall spacers are formed on the sidewalls of the patterned amorphous carbon layer. A layer of protective material is deposited and then patterned to expose mask elements in the array region and in selected parts of the interface or periphery areas. Amorphous carbon in the array region or other exposed parts is removed, thereby leaving a pattern including free-standing, pitch multiplied spacers in the array region. The protective material is removed, leaving a pattern of pitch multiplied spacers in the array region and non-pitch multiplied mask elements in the interface and periphery areas. The pattern is transferred to a hard mask layer, through which an underlying substrate is etched.
摘要:
The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly suitable for utilization in dynamic random access memory (DRAM) arrays. The invention also includes DRAM arrays having low rates of refresh. Additionally, the invention includes semiconductor constructions containing transistors with horizontally-opposing source/drain regions and channel regions between the source/drain regions. The transistors can include gates that encircle at least three-fourths of at least portions of the channel regions, and in some aspects can include gates that encircle substantially an entirety of at least portions of the channel regions.
摘要:
In accordance with embodiments, there are provided mechanisms and methods for selecting a synchronous or asynchronous process to determine a forecast. These mechanisms and methods for such synchronous/asynchronous process selection can enable embodiments to determine forecasts for multiple users (e.g. with hierarchical relationships, etc.) over an arbitrary time interval. The ability of embodiments to provide forecasts that involve such a large amount of data in an effective way can enable forecasting that was otherwise infeasible due to resource limitations.
摘要:
Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a substrate through a mask. The mask is formed by patterning a photoresist layer which simultaneously defines mask elements corresponding to features in the array, interface and periphery areas of the integrated circuit. The pattern is transferred to an amorphous carbon layer. Sidewall spacers are formed on the sidewalls of the patterned amorphous carbon layer. A layer of protective material is deposited and then patterned to expose mask elements in the array region and in selected parts of the interface or periphery areas. Amorphous carbon in the array region or other exposed parts is removed, thereby leaving a pattern including free-standing, pitch multiplied spacers in the array region. The protective material is removed, leaving a pattern of pitch multiplied spacers in the array region and non-pitch multiplied mask elements in the interface and periphery areas. The pattern is transferred to a hard mask layer, through which an underlying substrate is etched.