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    Method of forming recordable optical element using low absorption materials
    9.
    发明授权
    Method of forming recordable optical element using low absorption materials 失效
    使用低吸收材料形成可记录光学元件的方法

    公开(公告)号：US5770293A

    公开(公告)日：1998-06-23

    申请号：US631754

    申请日：1996-04-12

    申请人： Pranab K. Raychaudhuri ,  Fridrich Vazan

    发明人： Pranab K. Raychaudhuri ,  Fridrich Vazan

    IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  G11B7/24 ,  G11B7/243 ,  G11B7/258 ,  G11B7/26 ,  B32B3/00 ,  C23C16/00

    CPC分类号： C23C14/34 ,  C23C14/06 ,  G11B7/24 ,  G11B7/243 ,  G11B7/258 ,  G11B7/26 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/2534 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： A method of forming a recordable element including a substrate and having on its surface, in order, an optical recording layer and a light reflecting layer, the optical recording layer having at least two sublayers of different compositions is disclosed. The method includes forming in a sputtering chamber on the substrate surface a first sublayer of a predetermined thickness by sputtering at least two metal elements having Ge and Te, or alloys thereof, in a flowing environment of a hydrocarbon gas and an inert gas wherein the flow rate of the hydrocarbon gas is selected relative to the flow rate of the inert gas to provide the first sublayer with an elemental R.sub.min reflectivity is in the range of 40-60% and forming in the sputtering chamber on the first sublayer a second sublayer of a predetermined thickness by sputtering at least two elements having Ge and Te, or alloys thereof, in a flowing environment of hydrocarbon gas and the inert gas, with the flow rates of the hydrocarbon gas and the inert gas being substantially the same as when the first sublayer was formed and reducing the sputtering rate of the metal elements in comparison to that used when forming the first sublayer so that the elemental R.sub.min reflectivity of the second sublayer is in the range of about 70-85%. The method further includes forming a reflecting layer on the second sublayer and selecting the thicknesses of the first and second sublayers, and the reflecting layer such that the reflectivity of the recording element is about or greater than 70% for a laser wavelength of about 780 nm.

    摘要翻译： 一种形成包括基板的可记录元件的方法，其顺序具有光记录层和光反射层，其光表面具有至少两个不同组成的亚层。 该方法包括在烃气体和惰性气体的流动环境中通过溅射至少两种具有Ge和Te的金属元素或其合金，在衬底表面上的溅射室中形成预定厚度的第一子层，其中流动 选择相对于惰性气体的流量来提供烃气体的速率以提供具有元素的第一子层Rmin反射率在40-60％的范围内，并且在溅射室中在第一子层上形成第二子层 在碳氢化合物气体和惰性气体的流动环境中溅射至少两种具有Ge和Te的元素或其合金的预定厚度，烃类气体和惰性气体的流速基本上与第一子层 并且与形成第一子层时相比，金属元素的溅射速率降低，使得第二子层的元素Rmin反射率 ayer在约70-85％的范围内。 该方法还包括在第二子层上形成反射层并选择第一和第二子层的厚度以及反射层，使得对于约780nm的激光波长，记录元件的反射率为大于或者大于70％ 。

    Method of forming recordable optical element using low absorption materials
    10.
    发明授权
    Method of forming recordable optical element using low absorption materials 失效
    使用低吸收材料形成可记录光学元件的方法

    公开(公告)号：US5725741A

    公开(公告)日：1998-03-10

    申请号：US631352

    申请日：1996-04-12

    申请人： Pranab K. Raychaudhuri ,  Fridrich Vazan

    发明人： Pranab K. Raychaudhuri ,  Fridrich Vazan

    IPC分类号： C23C14/06 ,  G11B7/24 ,  G11B7/243 ,  G11B7/258 ,  G11B7/26 ,  C23C14/34

    CPC分类号： G11B7/258 ,  C23C14/06 ,  G11B7/24 ,  G11B7/243 ,  G11B7/26 ,  G11B2007/24312 ,  G11B2007/24316 ,  G11B7/2534 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595

    摘要： A method of forming a recordable element including a substrate and having on its surface, in order, an optical recording layer and a light reflecting layer, the optical recording layer having at least two sublayers of different compositions is disclosed. The method includes forming in a sputtering chamber on the substrate surface a first sublayer of a predetermined thickness by sputtering at least two elements having Ge and Te, or alloys thereof, in a flowing environment of a hydrocarbon gas and an inert gas wherein the flow rate of the hydrocarbon gas is selected relative to the flow rate of the inert gas to provide the first sublayer with an elemental R.sub.min reflectivity in the range of 40-60% and forming in the sputtering chamber on the first sublayer a second sublayer of a predetermined thickness by sputtering at least two elements having Ge and Te, or alloys thereof, in a flowing environment of hydrocarbon gas and the inert gas, with the flow rate of the hydrocarbon gas being selected to be greater than when forming the first sublayer so that the elemental R.sub.min reflectivity of the second layer is in the range of about 70-85%. The method further includes forming a reflecting layer on the second sublayer and selecting the thicknesses of the first and second sublayers, and the reflecting layer such that the reflectivity of the recording element is about or greater than 70% for a laser wavelength of about 780 nm.

    摘要翻译： 一种形成包括基板的可记录元件的方法，其顺序具有光记录层和光反射层，其光表面具有至少两个不同组成的亚层。 该方法包括在烃气体和惰性气体的流动环境中通过溅射至少两种具有Ge和Te的元素或其合金，在衬底表面上的溅射室中形成预定厚度的第一子层，其中流速 选择相对于惰性气体的流量的烃气体，以使第一子层的元素Rmin反射率在40-60％的范围内，并且在溅射室中在第一子层上形成预定厚度的第二子层 通过在烃气和惰性气体的流动环境中溅射至少两种具有Ge和Te的元素或其合金，其中烃气体的流量被选择为大于形成第一子层时的元素， 第二层的Rmin反射率在约70-85％的范围内。 该方法还包括在第二子层上形成反射层并选择第一和第二子层的厚度以及反射层，使得对于约780nm的激光波长，记录元件的反射率为大于或者大于70％ 。