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    Self assembled monolayer for improving adhesion between copper and barrier layer
    1.
    发明申请
    Self assembled monolayer for improving adhesion between copper and barrier layer 审中-公开
    自组装单层以改善铜和阻挡层之间的粘附性

    公开(公告)号：US20090304914A1

    公开(公告)日：2009-12-10

    申请号：US11639012

    申请日：2006-12-13

    申请人： Praveen Nalla ,  William Thie ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  Yezdi Dordi

    发明人： Praveen Nalla ,  William Thie ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  Yezdi Dordi

    IPC分类号： B05D3/10

    CPC分类号： C23C16/45525 ,  C23C16/18 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861

    摘要： The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.

    摘要翻译： 这些实施例满足了能够沉积薄且保形的阻挡层和铜互连中的铜层的需要，具有良好的电迁移性能并且具有降低的铜互连的应力诱发空穴的风险。 电迁移和应力引起的空隙受到阻挡层和铜层之间的粘附的影响。 在阻挡层上沉积功能化层，以使铜层沉积在铜互连中。 官能化层与阻挡层和铜形成强结合，以改善两层之间的粘附性。 提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以辅助铜层沉积在铜互连中以便提高铜互连的电迁移性能的示例性方法。 该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，以及氧化金属阻挡层的表面。 该方法还包括将功能化层沉积在金属阻挡层的氧化表面上，并且在功能层沉积在金属阻挡层上之后，将铜层沉积在铜互连结构中。

    Self-limiting plating method
    4.
    发明申请
    Self-limiting plating method 审中-公开
    自限电镀法

    公开(公告)号：US20080152823A1

    公开(公告)日：2008-06-26

    申请号：US11643404

    申请日：2006-12-20

    申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  William Thie ,  Fritz C. Redeker ,  Praveen Nalla

    发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  William Thie ,  Fritz C. Redeker ,  Praveen Nalla

    IPC分类号： B05D1/18

    CPC分类号： C23C18/1689 ,  C23C18/161 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/1683 ,  C23C18/31 ,  H01L21/288 ,  H01L21/76877

    摘要： A self-limiting electroless plating process is provided to plate thin films with improved uniformity. The process comprises dispensing an electroless plating solution onto a substrate to form a quiescent solution layer from which a conformal plated layer plates onto a surface of the substrate by a redox reaction. The redox reaction occurs at the surface of the substrate between a reducing agent ion and a plating ion and produces an oxidized ion. Because the solution is quiescent, a boundary layer forms within the solution layer adjacent to the surface. The boundary layer is characterized by a concentration gradient of the oxidized ion. Diffusion of the reducing agent ion through the boundary layer controls the redox reaction. The quiescent solution layer can be maintained until the reducing agent ion in the solution layer is substantially depleted.

    摘要翻译： 提供了一种自限制化学镀工艺，以平整薄膜，以均匀度提高。 该方法包括将化学镀溶液分配到基底上以形成静电溶液层，通过氧化还原反应从其中将共形镀层从该平板镀在基底的表面上。 氧化还原反应发生在还原剂离子和镀覆离子之间的衬底表面，并产生氧化离子。 因为溶液是静止的，所以在与表面相邻的溶液层内形成边界层。 边界层的特征在于氧化离子的浓度梯度。 还原剂离子通过边界层的扩散控制氧化还原反应。 可以维持静止溶液层，直到溶液层中的还原剂离子基本上被耗尽。