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    Self-limiting plating method
    3.
    发明申请
    Self-limiting plating method 审中-公开
    自限电镀法

    公开(公告)号：US20080152823A1

    公开(公告)日：2008-06-26

    申请号：US11643404

    申请日：2006-12-20

    申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  William Thie ,  Fritz C. Redeker ,  Praveen Nalla

    发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  William Thie ,  Fritz C. Redeker ,  Praveen Nalla

    IPC分类号： B05D1/18

    CPC分类号： C23C18/1689 ,  C23C18/161 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/1683 ,  C23C18/31 ,  H01L21/288 ,  H01L21/76877

    摘要： A self-limiting electroless plating process is provided to plate thin films with improved uniformity. The process comprises dispensing an electroless plating solution onto a substrate to form a quiescent solution layer from which a conformal plated layer plates onto a surface of the substrate by a redox reaction. The redox reaction occurs at the surface of the substrate between a reducing agent ion and a plating ion and produces an oxidized ion. Because the solution is quiescent, a boundary layer forms within the solution layer adjacent to the surface. The boundary layer is characterized by a concentration gradient of the oxidized ion. Diffusion of the reducing agent ion through the boundary layer controls the redox reaction. The quiescent solution layer can be maintained until the reducing agent ion in the solution layer is substantially depleted.

    摘要翻译： 提供了一种自限制化学镀工艺，以平整薄膜，以均匀度提高。 该方法包括将化学镀溶液分配到基底上以形成静电溶液层，通过氧化还原反应从其中将共形镀层从该平板镀在基底的表面上。 氧化还原反应发生在还原剂离子和镀覆离子之间的衬底表面，并产生氧化离子。 因为溶液是静止的，所以在与表面相邻的溶液层内形成边界层。 边界层的特征在于氧化离子的浓度梯度。 还原剂离子通过边界层的扩散控制氧化还原反应。 可以维持静止溶液层，直到溶液层中的还原剂离子基本上被耗尽。

    Self assembled monolayer for improving adhesion between copper and barrier layer
    5.
    发明申请
    Self assembled monolayer for improving adhesion between copper and barrier layer 审中-公开
    自组装单层以改善铜和阻挡层之间的粘附性

    公开(公告)号：US20090304914A1

    公开(公告)日：2009-12-10

    申请号：US11639012

    申请日：2006-12-13

    申请人： Praveen Nalla ,  William Thie ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  Yezdi Dordi

    发明人： Praveen Nalla ,  William Thie ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  Yezdi Dordi

    IPC分类号： B05D3/10

    CPC分类号： C23C16/45525 ,  C23C16/18 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861

    摘要： The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.

    摘要翻译： 这些实施例满足了能够沉积薄且保形的阻挡层和铜互连中的铜层的需要，具有良好的电迁移性能并且具有降低的铜互连的应力诱发空穴的风险。 电迁移和应力引起的空隙受到阻挡层和铜层之间的粘附的影响。 在阻挡层上沉积功能化层，以使铜层沉积在铜互连中。 官能化层与阻挡层和铜形成强结合，以改善两层之间的粘附性。 提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以辅助铜层沉积在铜互连中以便提高铜互连的电迁移性能的示例性方法。 该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，以及氧化金属阻挡层的表面。 该方法还包括将功能化层沉积在金属阻挡层的氧化表面上，并且在功能层沉积在金属阻挡层上之后，将铜层沉积在铜互连结构中。

    Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
    7.
    发明授权
    Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide 有权
    用于工程化硅型表面以进行选择性金属沉积以形成金属硅化物的工艺和系统

    公开(公告)号：US08747960B2

    公开(公告)日：2014-06-10

    申请号：US11513446

    申请日：2006-08-30

    申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

    发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

    IPC分类号： C23C14/02 ,  H05H1/00

    CPC分类号： C23C18/1651 ,  C23C18/1893 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  Y02P70/605

    摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.

    摘要翻译： 这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能，提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。 提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。 该方法包括从集成系统中的衬底表面去除有机污染物，以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面，以将硅或多晶硅表面上的氧化硅转化为硅，其中在还原硅或多晶硅之后 表面，在受控环境中转移和处理衬底以防止形成氧化硅，减少硅或多晶硅表面以增加金属在硅表面上的选择性。 该方法还包括在减少硅或多晶硅表面之后，在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。 还提供了用于实践上述示例性方法的示例性系统。

    Processes and systems for engineering a barrier surface for copper deposition
    8.
    发明授权
    Processes and systems for engineering a barrier surface for copper deposition 有权
    用于工程用于铜沉积的阻挡面的工艺和系统

    公开(公告)号：US08241701B2

    公开(公告)日：2012-08-14

    申请号：US11514038

    申请日：2006-08-30

    申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

    发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

    IPC分类号： B05D5/12

    CPC分类号： H01L21/7685 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1844 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76879

    摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically barrier-to-copper interface. An exemplary method of preparing a substrate surface of a substrate to deposit a metallic barrier layer to line a copper interconnect structure of the substrate and to deposit a thin copper seed layer on a surface of the metallic barrier layer in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes cleaning an exposed surface of a underlying metal to remove surface metal oxide in the integrated system, wherein the underlying metal is part of a underlying interconnect electrically connected to the copper interconnect. The method also includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method further includes depositing the thin copper seed layer in the integrated system, and depositing a gap-fill copper layer over the thin copper seed layer in the integrated system. An exemplary system to practice the exemplary method described above is also provided.

    摘要翻译： 这些实施方案通过提供改进的工艺和系统来提供改进的金属 - 金属界面，更具体地说是阻隔层，提高了电迁移性能，提供较低的金属电阻率，以及改进铜互连的金属 - 金属界面粘附的需要， 到铜接口。 一种制备衬底的衬底表面的示例性方法，以沉积金属阻挡层以对衬底的铜互连结构进行排列并且在集成系统中在金属阻挡层的表面上沉积薄铜籽晶层以改善电迁移性能 的铜互连。 该方法包括清洁底层金属的暴露表面以去除集成系统中的表面金属氧化物，其中下面的金属是与铜互连电连接的底层互连件的一部分。 该方法还包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将基底在受控环境中转移和加工以防止形成金属阻挡氧化物。 该方法还包括在集成系统中沉积薄铜籽晶层，以及在集成系统中的薄铜种子层上沉积间隙填充铜层。 还提供了用于实践上述示例性方法的示例性系统。

    Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
    10.
    发明申请
    Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide 有权
    用于工程化硅型表面以进行选择性金属沉积以形成金属硅化物的工艺和系统

    公开(公告)号：US20070292615A1

    公开(公告)日：2007-12-20

    申请号：US11513446

    申请日：2006-08-30

    申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

    发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

    IPC分类号： B05D3/00 ,  B05D1/18 ,  B29C71/04 ,  C23C16/00

    CPC分类号： C23C18/1651 ,  C23C18/1893 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  Y02P70/605

    摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.

    摘要翻译： 这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能，提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。 提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。 该方法包括从集成系统中的衬底表面去除有机污染物，以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面，以将硅或多晶硅表面上的氧化硅转化为硅，其中在还原硅或多晶硅之后 表面，在受控环境中转移和处理衬底以防止形成氧化硅，减少硅或多晶硅表面以增加金属在硅表面上的选择性。 该方法还包括在减少硅或多晶硅表面之后，在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。 还提供了用于实践上述示例性方法的示例性系统。