公开(公告)号：US4633033A

公开(公告)日：1986-12-30

申请号：US699523

申请日：1985-02-08

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/0224 ,  H01L31/076 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022425 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes: a substrate having a semiconductor body disposed thereupon, a current collecting structure such as a bus-grid structure disposed upon the semiconductor body and a transparent conductive electrode overlying the semiconductor body and the current collecting structure. The photovoltaic device may also include a layer of low electrical conductivity material disposed beneath at least portions of the current collecting structure to prevent electrical contact between said structure and defective regions of the device occuring therebelow. Also disclosed are methods for the fabrication of the improved device.

摘要翻译： 具有增加的短路和分流缺陷容忍度的改进的光伏器件包括：具有设置在其上的半导体本体的基板，设置在半导体主体上的汇流栅格结构的集电结构和覆盖半导体本体的透明导电电极， 集电结构。 光伏器件还可以包括设置在集电结构的至少一部分下方的低导电性材料层，以防止所述结构与在其下发生的器件的缺陷区域之间的电接触。 还公开了用于制造改进的装置的方法。

公开(公告)号：US4633034A

公开(公告)日：1986-12-30

申请号：US699524

申请日：1985-02-08

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/0224 ,  H01L31/076 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022425 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes a pattern of current flow restricting material operatively disposed so as to limit the flow of electrical current between the substrate and the current collector of the device. Also disclosed are methods for the fabrication of the improved device.

摘要翻译： 显示增加的短路和分流缺陷公差的改进的光伏器件包括可操作地设置以限制基板和器件的集电器之间的电流流动的电流限流材料的图案。 还公开了用于制造改进的装置的方法。

公开(公告)号：US4590327A

公开(公告)日：1986-05-20

申请号：US653801

申请日：1984-09-24

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/076 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022433 ,  Y02E10/548

摘要： Disclosed is an improved photovoltaic device design and method. The design is especially useful for large area photovoltaic devices and includes a first electrode, a semiconductor body over the first electrode, a transparent electrically conductive layer over the semiconductor body and a bus grid structure in electrical contact with the conductor layer for collecting and carrying current generated by the photovoltaic device. Structure is provided for reducing the degrading effect of a low resistance current path or short in the semiconductor body.The structure for reducing the degrading effect of a low resistance current path can be a specifically designed transparent electrically conductive layer, electrical isolation of the current carrying portions of the bus grid structure from the conductive layer, resistive connections of the current collecting fingers to the remainder of the bus grid structure, a buffered bus grid structure or a fuse-type connection or the grid or current collecting fingers which terminates when the current reaches a predetermined amount.Methods of fabricating photovoltaic devices as disclosed herein are provided.

摘要翻译： 公开了一种改进的光伏器件设计和方法。 该设计对于大面积光伏器件特别有用，并且包括第一电极，在第一电极上方的半导体本体，半导体主体上方的透明导电层和与导体层电接触的用于收集和承载电流的总线栅格结构 由光伏器件产生。 提供了用于降低半导体本体中低电阻电流路径或短路的劣化效应的结构。 用于降低低电阻电流路径的降级效果的结构可以是专门设计的透明导电层，总线栅格结构的载流部分与导电层的电隔离，电流收集指状物与其余部分的电阻连接 总线网格结构，缓冲总线网格结构或熔丝式连接，或电流或集电指状物，当电流达到预定量时终止。 提供制造本文公开的光伏器件的方法。

公开(公告)号：US4507181A

公开(公告)日：1985-03-26

申请号：US581499

申请日：1984-02-17

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/04 ,  C25D5/02 ,  H01L21/288 ,  C25D5/10 ,  C25D7/12

CPC分类号： H01L21/2885 ,  C25D5/022 ,  C25D5/024 ,  C25D7/126

摘要： A non-destructive method of electro-coating a preselected pattern of electrically insulating or conducting material onto a semiconductor device which includes a photoresponsive junction. The method includes the step of illuminating the semiconductor device prior to initiating the flowing of electro-coating current therethrough. The method has particular utility in providing electroplated grid patterns and connections on large area photovoltaic cells. Also disclosed is the use of current generated by a photovoltaic cell to effect the electro-coating thereof.

摘要翻译： 电绝缘或导电材料的预选图案在包括光响应结的半导体器件上的非破坏性方法。 该方法包括在开始电穿透电流流过其中之前照射半导体器件的步骤。 该方法特别适用于在大面积光伏电池上提供电镀网格图案和连接。 还公开了使用由光伏电池产生的电流来实现其电涂覆。

公开(公告)号：US4654468A

公开(公告)日：1987-03-31

申请号：US773709

申请日：1985-09-09

申请人： Prem Nath ,  Dominic Crea ,  Allen Murray

发明人： Prem Nath ,  Dominic Crea ,  Allen Murray

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/075 ,  H01L31/06

CPC分类号： H01L31/02161 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/075 ,  Y02E10/548

摘要： An improved photovoltaic device having a preselected current carrying capacity includes an electrically conductive body, an electrically insulating layer disposed atop the conductive body and a current carrying electrically conductive pattern atop the insulating layer. The material forming the current carrying pattern infiltrates portions of the insulating layer and establishes electrical communication with the electrically conductive body in such a manner that the current carrying capacity of the device is proportional to the area which is infiltrated by the conductive material. Also disclosed herein are methods for the fabrication of the improved device.

摘要翻译： 具有预选电流承载能力的改进的光伏器件包括导电体，设置在导电体顶部的电绝缘层和位于绝缘层顶部的载流导电图案的载流子。 形成载流图案的材料渗入绝缘层的部分并与导电体形成电连通，使得该器件的载流能力与导电材料渗透的面积成比例。 本文还公开了用于制造改进的装置的方法。