公开(公告)号：US20160267961A1

公开(公告)日：2016-09-15

申请号：US15158658

申请日：2016-05-19

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Seung Hyuk KANG

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: G11C11/1675 ,  G11C8/005 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same

Abstract translation: 公开了具有电压控制各向异性的自旋轨道转矩磁阻随机存取存储器的方法和装置。 在一个实例中，公开了通过压控磁各向异性（VCMA）和自旋 - 轨道转矩（SOT）技术的组合来编程的三端磁隧道结（MTJ）存储元件。 还公开了一种被配置为经由VCMA和SOT技术对三端MTJ存储元件进行编程的存储器控​​制器。 所公开的设备通过使用较少的写入能量来提高与传统设备的效率，同时具有比常规设备更简单和更可扩展的设计。 所公开的装置还具有增加的热稳定性，而不增加所需的开关电流，因为状态之间的关键开关电流基本相同

公开(公告)号：US20170186942A1

公开(公告)日：2017-06-29

申请号：US15458641

申请日：2017-03-14

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Xiaochun ZHU ,  Matthias Georg GOTTWALD ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

公开(公告)号：US20160276581A1

公开(公告)日：2016-09-22

申请号：US15169603

申请日：2016-05-31

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.

公开(公告)号：US20160233418A1

公开(公告)日：2016-08-11

申请号：US15133018

申请日：2016-04-19

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Matthias Georg GOTTWALD ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

Abstract translation: 提供磁阻随机存取存储器（MRAM）中的磁隧道结（MTJ）器件及其制造方法，以实现高隧道磁阻（TMR），高垂直磁各向异性（PMA），良好的数据保留和 高水平的热稳定性。 MTJ装置包括第一自由铁磁层，合成反铁磁（SAF）耦合层和第二自由铁磁层，其中第一和第二自由铁磁层具有相反的磁矩。

公开(公告)号：US20160232959A1

公开(公告)日：2016-08-11

申请号：US14617919

申请日：2015-02-09

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Seung Hyuk KANG

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C8/005 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same.

Abstract translation: 公开了具有电压控制各向异性的自旋轨道转矩磁阻随机存取存储器的方法和装置。 在一个实例中，公开了通过压控磁各向异性（VCMA）和自旋 - 轨道转矩（SOT）技术的组合来编程的三端磁隧道结（MTJ）存储元件。 还公开了一种被配置为经由VCMA和SOT技术对三端MTJ存储元件进行编程的存储器控​​制器。 所公开的设备通过使用较少的写入能量来提高与传统设备的效率，同时具有比常规设备更简单和更可扩展的设计。 所公开的装置还具有增加的热稳定性，而不增加所需的开关电流，因为状态之间的关键开关电流基本相同。

公开(公告)号：US20160181508A1

公开(公告)日：2016-06-23

申请号：US14581361

申请日：2014-12-23

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Xiaochun ZHU ,  Matthias Georg GOTTWALD ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

Abstract translation: 垂直磁隧道结（MTJ）的合成反铁磁（SAF）参考层的材料堆可以包括SAF耦合层。 材料堆叠还可以包括SAF耦合层上的无定形间隔层。 非晶间隔层可以包括钽和钴或钽和铁或钴以及铁和钽的合金或多层。 非晶间隔层还可以包括SAF耦合层的处理表面。

公开(公告)号：US20150311427A1

公开(公告)日：2015-10-29

申请号：US14334015

申请日：2014-07-17

Applicant: QUALCOMM Incorporated

Inventor： Matthias Georg GOTTWALD ,  Jimmy KAN ,  Kangho LEE ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

Abstract translation: 用于制造垂直磁性隧道结（pMTJ）器件的方法包括在pMTJ器件的第一电极上生长晶种层。 种子层沿生长轴具有均匀的预定晶体取向。 该方法还包括平面化种子层，同时保持种子层的均匀的预定晶体取向。

公开(公告)号：US20160126453A1

公开(公告)日：2016-05-05

申请号：US14994212

申请日：2016-01-13

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan CHEN ,  Kangho LEE ,  Xiaochun ZHU ,  Seung H. KANG

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

Abstract translation: 垂直磁各向异性（PMA）型磁性随机存取存储单元由复合PMA层构成，以提供具有可接受热障的磁隧道结（MTJ）。 PMA耦合层沉积在第一PMA层和第二PMA层之间以形成复合PMA层。 复合PMA层可以并入PMA型MRAM细胞或平面内MRAM细胞中。

公开(公告)号：US20160072043A1

公开(公告)日：2016-03-10

申请号：US14483104

申请日：2014-09-10

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Jimmy KAN ,  Matthias Georg Gottwald ,  Xiaochun ZHU ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.

Abstract translation: 磁性隧道结（MTJ）装置包括钉扎层，钉扎层上的隧道势垒层和隧道势垒层上的自由层。 MTJ装置还包括在自由层上的垂直磁各向异性（PMA）增强层，PMA增强层上的覆盖层以及电封闭封盖层，PMA增强层和自由层的导电路径。 制造垂直磁性隧道结（pMTJ）器件的方法包括形成覆盖层，垂直磁性各向异性（PMA）增强层和自由层。 该方法还包括形成导电层以缩短封盖层，PMA增强层和自由层。

公开(公告)号：US20160020383A1

公开(公告)日：2016-01-21

申请号：US14870769

申请日：2015-09-30

Applicant: QUALCOMM Incorporated

Inventor： Seung H. KANG ,  David BANG ,  Kangho LEE

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A method for integrating a magnetic tunnel junction (MTJ) device into an integrated circuit includes providing in a semiconductor back-end-of-line (BEOL) process flow a substrate having a first interlevel dielectric layer and at least a first conductive interconnect. Over the first interlevel dielectric layer and the first conductive interconnect, magnetic tunnel junction material layers are deposited. From the material layers a magnetic tunnel junction stack, coupled to the first conductive interconnect, is defined using a single mask process. The magnetic tunnel junction stack is integrated into the integrated circuit.

Abstract translation: 将磁性隧道结（MTJ）器件集成到集成电路中的方法包括在半导体后端（BEOL）工艺流程中提供具有第一层间介质层和至少第一导电互连的衬底。 在第一层间介质层和第一导电互连层之后，沉积磁隧道结材料层。 从材料层，使用单个掩模工艺限定耦合到第一导电互连的磁性隧道结堆叠。 磁性隧道结堆叠集成在集成电路中。