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公开(公告)号:US09754655B2
公开(公告)日:2017-09-05
申请号:US15340266
申请日:2016-11-01
Applicant: QUALCOMM Incorporated
Inventor: Mosaddiq Saifuddin , SankaraRao Kunapareddy , Keunsoo Roh , Chun Xiang He , Pratik Patel , Nicholas Ambur , Jeremy Haugen
IPC: G11C16/06 , G11C11/406 , G11C7/10 , G11C11/408 , G06F13/16 , G06F1/32
CPC classification number: G11C11/40615 , G06F1/3225 , G06F1/3275 , G06F13/1636 , G11C7/1072 , G11C11/40611 , G11C11/40618 , G11C11/40622 , G11C11/4087
Abstract: In an embodiment, a dynamic random-access memory (DRAM) system configures an inactive portion of a DRAM die to operate in accordance with a self-refresh mode that is characterized by refreshes of the DRAM die being controlled by a local DRAM die controller integrated into the DRAM die. The DRAM system also configures an active portion of the DRAM die to operate in accordance with a controller-managed refresh mode while the inactive portion of the DRAM die operates in the self-refresh mode, the controller-managed refresh mode characterized by refreshes of the DRAM die being controlled by a controller that is external to the DRAM die.
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公开(公告)号:US09690364B2
公开(公告)日:2017-06-27
申请号:US14846306
申请日:2015-09-04
Applicant: QUALCOMM INCORPORATED
Inventor: Hee Jun Park , Haw-Jing Lo , Keunsoo Roh
IPC: G06F1/32
CPC classification number: G06F1/3296 , G06F1/3206 , G06F1/3228 , G06F1/3275 , Y02D10/14
Abstract: Systems, methods, and computer programs are disclosed for dynamically adjusting memory power state transition timers. One embodiment of a method comprises receiving one or more parameters impacting usage or performance of a memory device coupled to a processor in a computing device. An optimal value is determined for one or more memory power state transition timer settings. A current value is updated for the memory power state transition timer settings with the optimal value.
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