公开(公告)号：US20190036217A1

公开(公告)日：2019-01-31

申请号：US15710720

申请日：2017-09-20

Applicant: QUALCOMM Incorporated

Inventor： Calogero Davide Presti ,  Ryan Scott Castro Spring ,  Yu Zhao

IPC: H01Q5/328 ,  H04B1/48 ,  H04B1/00

Abstract: An example apparatus is disclosed for selectable filtering with switching. The apparatus includes an antenna switch module mounted to a surface of a substrate. The antenna switch module includes an antenna node, multiple switchable nodes, and multiple switches configured to connect or disconnect the multiple switchable nodes to or from the antenna node. The antenna switch module also includes a capacitor coupled in series with a first switch of the multiple switches between the antenna node and a first switchable node of the multiple switchable nodes. The capacitor is configured to provide a capacitance for a selectable filter. The apparatus also includes an inductor that is supported by the substrate and coupled between the first switchable node and a ground. The inductor is configured to provide an inductance for the selectable filter.

公开(公告)号：US20140266448A1

公开(公告)日：2014-09-18

申请号：US13828646

申请日：2013-03-14

Applicant: QUALCOMM INCORPORATED

Inventor： Jeongwon Cha ,  Chang-Ho Lee ,  Woonyun Kim ,  Aristotele Hadjichristos ,  Yu Zhao

IPC: H03F3/193 ,  H03F3/21

CPC classification number: H03F3/193 ,  H03F1/0211 ,  H03F1/0261 ,  H03F1/22 ,  H03F1/223 ,  H03F1/3205 ,  H03F3/21 ,  H03F3/2171 ,  H03F3/245 ,  H03F2200/18 ,  H03F2200/61

Abstract: Exemplary embodiments are related to an envelope-tracking power amplifier. A device may include a first transistor of a plurality of transistors in a stacked configuration configured to receive a supply voltage varying with an envelope of a radio-frequency (RF) input signal. The device may further include a second transistor of the plurality in the stacked configuration coupled to a reference voltage and configured to receive a dynamic bias voltage varying inversely proportional to the supply voltage.

Abstract translation: 示例性实施例涉及包络跟踪功率放大器。 器件可以包括堆叠配置中的多个晶体管的第一晶体管，其被配置为接收随着射频（RF）输入信号的包络而变化的电源电压。 器件还可包括多个堆叠配置中的第二晶体管，其耦合到参考电压并被配置为接收与电源电压成反比变化的动态偏置电压。