公开(公告)号：US20240055346A1

公开(公告)日：2024-02-15

申请号：US17888369

申请日：2022-08-15

Applicant: QUALCOMM Incorporated

Inventor： Prakash RATTAISUTRIPALAYAM PALANISAMY ,  Bruce LEE ,  Bavireddy SAI KRISHNA ,  Balavva Shivappa KAMATAGI

IPC: H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5223 ,  H01L23/528

Abstract: A chip includes a first capacitor. The first capacitor includes first electrodes formed from metal layer M0, wherein the first electrodes are coupled to one another. The first capacitor also includes second electrodes formed from the metal layer M0, wherein the second electrodes are coupled to one another.

公开(公告)号：US20230253400A1

公开(公告)日：2023-08-10

申请号：US17650233

申请日：2022-02-07

Applicant: QUALCOMM Incorporated

Inventor： Bruce LEE ,  Chandra Satya Priyanka TIRUPATHI ,  Liang DAI ,  Dinesh Jagannath ALLADI

IPC: H01L27/07 ,  H01L27/08

CPC classification number: H01L27/0733 ,  H01L27/0805

Abstract: A device includes a first plurality of MEOL interconnects coupled to a second node that extends in a first direction. The first plurality of MEOL interconnects includes first and second subsets of MEOL second-terminal interconnects. The device includes a second plurality of MEOL interconnects coupled to a first node that extends in the first direction. The second plurality of MEOL interconnects includes first and second subsets of MEOL first-terminal interconnects. The first subsets of MEOL first-terminal and second-terminal interconnects are interleaved and are a first subset of interleaved MEOL interconnects. The second subsets of MEOL first-terminal and second-terminal interconnects are interleaved and are a second subset of interleaved MEOL interconnects. The device includes at least one of a first plurality of gate interconnects or a first plurality of OD regions extending in a second direction orthogonal to the first direction between the first and second subsets of interleaved MEOL interconnects.