公开(公告)号：US10083963B2

公开(公告)日：2018-09-25

申请号：US15387501

申请日：2016-12-21

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  Jean Richaud

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L21/768 ,  H01L21/822 ,  H01L27/06

CPC classification number: H01L27/0924 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L21/84 ,  H01L21/845 ,  H01L23/481 ,  H01L23/485 ,  H01L27/0694 ,  H01L27/092 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0676 ,  H01L29/42392

Abstract: An integrated circuit device may include a p-type metal oxide semiconductor (PMOS) transistor supported by a backside of an isolation layer. The integrated circuit device may also include an n-type metal oxide semiconductor (NMOS) transistor supported by a front-side of the isolation layer, opposite the backside. The integrated circuit device may further include a shared contact extending through the isolation layer and electrically coupling a first terminal of the PMOS transistor to the first terminal of the NMOS transistor.