公开(公告)号：US11742826B2

公开(公告)日：2023-08-29

申请号：US17530650

申请日：2021-11-19

申请人： Qorvo US, Inc.

发明人： Shogo Inoue ,  Marc Solal

IPC分类号： H03H9/02 ,  H03H3/10

CPC分类号： H03H9/02551 ,  H03H3/10 ,  H03H9/0222 ,  H03H9/02559 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/02866

摘要： Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.

公开(公告)号：US11206007B2

公开(公告)日：2021-12-21

申请号：US16037259

申请日：2018-07-17

申请人： Qorvo US, Inc.

发明人： Shogo Inoue ,  Marc Solal

IPC分类号： H03H9/02 ,  H03H3/10

摘要： Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.

公开(公告)号：US20180109241A1

公开(公告)日：2018-04-19

申请号：US15785760

申请日：2017-10-17

申请人： Qorvo US, Inc.

发明人： Shogo Inoue ,  Marc Solal

IPC分类号： H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25

CPC分类号： H03H9/6413 ,  H03H9/02157 ,  H03H9/02228 ,  H03H9/02551 ,  H03H9/02559 ,  H03H9/02566 ,  H03H9/02574 ,  H03H9/02669 ,  H03H9/14541 ,  H03H9/25

摘要： A guided acoustic wave device includes a substrate, a lithium tantalate layer on the substrate, and a transducer on the lithium tantalate film. The lithium tantalate has a crystalline orientation defined by (YXl)Θ°, where Θ is between 10° and 37°. The inventors discovered that limiting the crystalline orientation of the lithium tantalate in this manner provides significant increases in the electromechanical coupling coefficient of the acoustic wave device, thereby increasing bandwidth and improving performance.

公开(公告)号：US12107562B2

公开(公告)日：2024-10-01

申请号：US17521316

申请日：2021-11-08

申请人： Qorvo US, Inc.

发明人： Shogo Inoue ,  Hao Dong

IPC分类号： H03H9/13 ,  H03H9/145

CPC分类号： H03H9/13 ,  H03H9/14502

摘要： An acoustic resonator includes a piezoelectric layer on a substrate and an interdigital electrode structure on the piezoelectric layer. The interdigital electrode structure includes a first bus bar, a second bus bar, a first set of electrode fingers, and a second set of electrode fingers. The first bus bar and the second bus bar extend parallel to one another along a length of the interdigital electrode structure. The first set of electrode fingers are coupled to the first bus bar and extend to a first apodization edge. The second set of electrode fingers are coupled to the second bus bar and extend to a second apodization edge. The first set of electrode fingers and the second set of electrode fingers are interleaved. At least one of the first apodization edge and the second apodization edge provides a wave pattern along the length of the interdigital electrode structure.

公开(公告)号：US12052011B2

公开(公告)日：2024-07-30

申请号：US17527375

申请日：2021-11-16

申请人： Qorvo US, Inc.

发明人： Marc Solal ,  Shogo Inoue

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/1457 ,  H03H9/02559 ,  H03H9/25 ,  H03H9/6483 ,  H03H9/6489

摘要： The present disclosure relates to acoustic wave devices, and particularly to high quality factor (Q) transducers for surface acoustic wave (SAW) devices. An exemplary SAW device includes an interdigital transducer (IDT) between two reflective gratings to form a resonator. The resonator operates through shear horizontal mode acoustic waves, and therefore suppression of transverse modes (parallel to electrode fingers of the IDT) is desired. A piston mode can be formed in the resonator to suppress transverse modes, which may also increase energy leakage and result in a lower Q. A higher Q is achieved by adding a fast region at an end of one or more of the electrode fingers of the IDT.

公开(公告)号：US11750170B2

公开(公告)日：2023-09-05

申请号：US16952409

申请日：2020-11-19

申请人： Qorvo US, Inc.

发明人： Shogo Inoue ,  Marc Solal

IPC分类号： H03H9/02 ,  H03H9/145 ,  H03H9/64

CPC分类号： H03H9/02566 ,  H03H9/02559 ,  H03H9/02574 ,  H03H9/14564 ,  H03H9/6433

摘要： A guided surface acoustic wave (SAW) device includes a substrate, a piezoelectric layer on the substrate, and a transducer on the piezoelectric layer. The substrate is silicon, and has a crystalline orientation defined by a first Euler angle (ϕ), a second Euler angle (θ), and a third Euler angle (ψ). The first Euler angle (ϕ), the second Euler angle (θ), and the third Euler angle (ψ) are chosen such that a velocity of wave propagation within the substrate is less than 6,000 m/s.

公开(公告)号：US20220352862A1

公开(公告)日：2022-11-03

申请号：US17857715

申请日：2022-07-05

申请人： Qorvo US, Inc.

发明人： Shogo Inoue ,  Marc Solal ,  Robert Aigner

IPC分类号： H03H3/02 ,  H03H9/02 ,  H03H3/10 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64

摘要： A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance T over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. The modifying and bonding steps may be performed in any order. The modified top portion of the silicon substrate prevents the creation of a parasitic conductance within that portion during operation of the SAW device.

公开(公告)号：US20220149813A1

公开(公告)日：2022-05-12

申请号：US17527375

申请日：2021-11-16

申请人： Qorvo US, Inc.

发明人： Marc Solal ,  Shogo Inoue

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/64 ,  H03H9/25

摘要： The present disclosure relates to acoustic wave devices, and particularly to high quality factor (Q) transducers for surface acoustic wave (SAW) devices. An exemplary SAW device includes an interdigital transducer (IDT) between two reflective gratings to form a resonator. The resonator operates through shear horizontal mode acoustic waves, and therefore suppression of transverse modes (parallel to electrode fingers of the IDT) is desired. A piston mode can be formed in the resonator to suppress transverse modes, which may also increase energy leakage and result in a lower Q. A higher Q is achieved by adding a fast region at an end of one or more of the electrode fingers of the IDT.

公开(公告)号：US20220140808A1

公开(公告)日：2022-05-05

申请号：US17521316

申请日：2021-11-08

申请人： Qorvo US, Inc.

发明人： Shogo Inoue ,  Hao Dong

IPC分类号： H03H9/13 ,  H03H9/145

摘要： An acoustic resonator includes a piezoelectric layer on a substrate and an interdigital electrode structure on the piezoelectric layer. The interdigital electrode structure includes a first bus bar, a second bus bar, a first set of electrode fingers, and a second set of electrode fingers. The first bus bar and the second bus bar extend parallel to one another along a length of the interdigital electrode structure. The first set of electrode fingers are coupled to the first bus bar and extend to a first apodization edge. The second set of electrode fingers are coupled to the second bus bar and extend to a second apodization edge. The first set of electrode fingers and the second set of electrode fingers are interleaved. At least one of the first apodization edge and the second apodization edge provides a wave pattern along the length of the interdigital electrode structure.

公开(公告)号：US10574203B2

公开(公告)日：2020-02-25

申请号：US15087225

申请日：2016-03-31

申请人： QORVO US, INC.

发明人： Shogo Inoue ,  Marc Solal ,  Robert Aigner

IPC分类号： H03H3/02 ,  H03H3/10 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/54 ,  H03H9/02 ,  H03H9/64

摘要： A bonded wafer with low carrier lifetime in silicon comprises a silicon substrate having opposing top and bottom surfaces; a piezoelectric layer bonded over the top surface of the silicon substrate and having opposing top and bottom surfaces separated by a distance T; and a pair of electrodes having fingers that are inter-digitally dispersed on the top surface of the piezoelectric layer in a pattern having a center-to-center distance D between adjacent fingers of the same electrode, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. A structure of the silicon in a top portion of the silicon substrate has been modified to reduce carrier lifetime and prevent the creation of a parasitic conductance within the top portion of the silicon substrate during operation of the SAW device.