公开(公告)号：US20230326899A1

公开(公告)日：2023-10-12

申请号：US18187386

申请日：2023-03-21

申请人： Qorvo US, Inc.

发明人： Yinbao Yang ,  Xiaokang Huang ,  Kenneth Frazee

IPC分类号： H01L23/00

CPC分类号： H01L24/32 ,  H01L24/05 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/05147 ,  H01L2224/05144 ,  H01L2224/0508 ,  H01L2224/05155 ,  H01L2224/05172 ,  H01L2224/05169 ,  H01L2224/05186 ,  H01L2924/05 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32503 ,  H01L2224/32506 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/10272 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/10329 ,  H01L2224/83815 ,  H01L2224/8381 ,  H01L2224/32245 ,  H01L2924/014

摘要： The present disclosure relates to a microelectronics package with significantly reduced delamination/cracking at solder joints, and a process for making the same. The disclosed microelectronics package includes a carrier, a solder joint region over the carrier, a top intermetallic (IMC) layer over the solder joint region, and a device die over the top IMC layer. Herein, the device die includes a substrate, an active device over the substrate, a top barrier layer underneath the substrate, and a backside metal layer vertically between the top IMC layer and the top barrier layer. The backside metal layer is formed of gold (Au) with a thickness at least 0.5 μm. The top IMC layer comprises gold nickel tin (AuNiSn) or gold platinum tin (AuPtSn), and the solder joint region comprises an Au-rich gold-tin (Au5Sn) and gold-tin (AuSn) eutectic mixture.