-
公开(公告)号：US09893683B2
公开(公告)日：2018-02-13
申请号：US15062796
申请日：2016-03-07
Applicant: Raytheon Company
Inventor： Jon Mooney , David D. Heston , Bryan G. Fast , Thomas L. Middlebrook
CPC classification number: H03F1/483 , H03F1/565 , H03F3/189 , H03F3/193 , H03F3/24 , H03F3/245 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/36 , H03F2200/451 , H03F2200/534 , H03F2200/537 , H03F2200/543 , H04B1/18
Abstract: A circuit for amplifying a source signal generated by a signal source having a first impedance includes a transmission line transformer (TLT) having a first, a second, a third, and a fourth port wherein the TLT is coupled to receive the source signal at the first port and configured to output a corresponding impedance matched signal at the second port, the second port is coupled to the third port of the TLT, the circuit also including a TLT load having a first terminal coupled to the fourth port of the TLT and a second terminal coupled to a reference potential. The circuit additionally includes an amplifier device responsive to the impedance matched signal to generate an amplified signal.
-
Patent Agency Ranking
公开(公告)号：US08884700B2
公开(公告)日：2014-11-11
申请号：US13743570
申请日：2013-01-17
Applicant: Raytheon Company
Inventor： Jon Mooney , Bryan G. Fast , David D. Heston
CPC classification number: H03F1/30 , H01L23/34 , H01L27/0248 , H01L2924/0002 , H01L2924/00
Abstract: A temperature control system having: a resistor formed in a region of a semiconductor, such resistor having a pair of spaced electrodes in ohmic contact with the semiconductor; at least one device formed in another region of the semiconductor thermally proximate the resistor formed region, such device generating heat in the semiconductor; and circuitry, including a reference connected to one of the pair of electrodes, for operating the resistor in saturation and for sensing variation in the resistor in response to the heat generated by the device and for controlling the heat generated by the device in the semiconductor in response to the sensed variation.
Abstract translation: 一种温度控制系统，具有：形成在半导体区域中的电阻器，所述电阻器具有与所述半导体欧姆接触的一对间隔开的电极; 至少一个器件形成在半导体热电偶附近的半导体的另一个区域中，这种器件在半导体中产生热量; 以及电路，包括连接到所述一对电极中的一个电极的参考电路，用于使电阻器饱和并且响应于由器件产生的热而感测电阻器中的变化，并且用于控制半导体器件中产生的热量 响应感测的变化。
-
公开(公告)号：US20200335413A1
公开(公告)日：2020-10-22
申请号：US16390659
申请日：2019-04-22
Applicant: Raytheon Company
Inventor： David D. Heston , John G. Heston , Claire E. Mooney , Mikel J. White , Jon Mooney , Tiffany Cassidy
IPC: H01L23/34 , H01L23/498 , H01L23/66
Abstract: An HPA MMIC assembly includes a MMIC device coupled to a thermal spreader. A ground plane is provided on the thermal spreader and coupled to FETs in the MMIC device. The multiple levels of metal separated by multiple dielectric layers provide low-loss broad-band microstrip circuits. The thermal spreader may include diamond, an air/wire-edm spreader or a multi-layer board (MLB) with heat sink vias and ground vias.
-
公开(公告)号：US20140197891A1
公开(公告)日：2014-07-17
申请号：US13743570
申请日：2013-01-17
Applicant: RAYTHEON COMPANY
Inventor： Jon Mooney , Bryan G. Fast , David D. Heston
IPC: H03F1/30
CPC classification number: H03F1/30 , H01L23/34 , H01L27/0248 , H01L2924/0002 , H01L2924/00
Abstract: A temperature control system having: a resistor formed in a region of a semiconductor, such resistor having a pair of spaced electrodes in ohmic contact with the semiconductor; at least one device formed in another region of the semiconductor thermally proximate the resistor formed region, such device generating heat in the semiconductor; and circuitry, including a reference connected to one of the pair of electrodes, for operating the resistor in saturation and for sensing variation in the resistor in response to the heat generated by the device and for controlling the heat generated by the device in the semiconductor in response to the sensed variation.
Abstract translation: 一种温度控制系统，具有：形成在半导体区域中的电阻器，所述电阻器具有与所述半导体欧姆接触的一对间隔开的电极; 至少一个器件形成在半导体热电偶附近的半导体的另一个区域中，这种器件在半导体中产生热量; 以及电路，包括连接到所述一对电极中的一个电极的参考电路，用于使电阻器饱和并且响应于由器件产生的热而感测电阻器中的变化，并且用于控制半导体器件中产生的热量 响应感测的变化。
-
公开(公告)号：US20170257069A1
公开(公告)日：2017-09-07
申请号：US15062796
申请日：2016-03-07
Applicant: Raytheon Company
Inventor： Jon Mooney , David D. Heston , Bryan G. Fast , Thomas L. Middlebrook
CPC classification number: H03F1/483 , H03F1/565 , H03F3/189 , H03F3/193 , H03F3/24 , H03F3/245 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/36 , H03F2200/451 , H03F2200/534 , H03F2200/537 , H03F2200/543 , H04B1/18
Abstract: A circuit for amplifying a source signal generated by a signal source having a first impedance includes a transmission line transformer (TLT) having a first, a second, a third, and a fourth port wherein the TLT is coupled to receive the source signal at the first port and configured to output a corresponding impedance matched signal at the second port, the second port is coupled to the third port of the TLT, the circuit also including a TLT load having a first terminal coupled to the fourth port of the TLT and a second terminal coupled to a reference potential. The circuit additionally includes an amplifier device responsive to the impedance matched signal to generate an amplified signal.
-
公开(公告)号：US10896861B2
公开(公告)日：2021-01-19
申请号：US16390659
申请日：2019-04-22
Applicant: Raytheon Company
Inventor： David D. Heston , John G. Heston , Claire E. Mooney , Mikel J. White , Jon Mooney , Tiffany Cassidy
IPC: H05K1/02 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/46 , H01L23/48 , H01L23/66 , H01L23/367 , H01L23/373 , H01L23/495 , H01L23/498 , H01L23/522 , H01L23/528 , H01L23/535 , H01L23/538 , H01L23/34
Abstract: An HPA MMIC assembly includes a MMIC device coupled to a thermal spreader. A ground plane is provided on the thermal spreader and coupled to FETs in the MMIC device. The multiple levels of metal separated by multiple dielectric layers provide low-loss broad-band microstrip circuits. The thermal spreader may include diamond, an air/wire-edm spreader or a multi-layer board (MLB) with heat sink vias and ground vias.
-
-
-
-
-
Search Results
6
records
(took 0.014 seconds)
