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公开(公告)号：US3894164A
公开(公告)日：1975-07-08
申请号：US34159773
申请日：1973-03-15
Applicant: RCA CORP
Inventor： DISMUKES JOHN PICKETT , KANE JAMES
CPC classification number: H01J9/221 , C09K11/7767 , C09K11/7794 , C23C16/40
Abstract: Method for depositing a luminescent film comprising vaporizing into a nonreactive carrier gas at least one betadiketonate of yttrium, lanthanum, gadolinium, and lutetium, and at least one beta-diketonate of a lanthanide that is an activator for the luminescent film; and then contacting the vapor-laden carrier gas with a heated substrate. The beta-diketonates are thermally decomposed to form oxides which deposit on the substrate. The method is continued until the desired film thickness is deposited. There may be one or more reactant gases present for preventing the deposition of carbon and/or for producing a luminescent sulfide. The carrier gas may contain a vanadiumcontaining beta-diketonate for producing a luminescent vanadate. The luminescent film may be annealed at temperatures above 500*C to enhance the luminescence of the film.
Abstract translation: 用于沉积发泡膜的方法，其包括将至少一种钇，镧，钆和镥的betadiketonate蒸发到非反应性载气中，以及至少一种作为发光膜的活化剂的镧系元素的β-二酮酸盐; 然后使载气的载气与加热的基底接触。 β-二酮酸酯被热分解形成沉积在基材上的氧化物。 继续该方法直到所需的膜厚沉积。 存在一种或多种反应气体用于防止碳沉积和/或产生发光硫化物。 载气可以含有含钒的β-二酮酸盐，用于生产发光的钒酸盐。 发光膜可以在高于500℃的温度下退火以增强膜的发光。
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公开(公告)号：US3669774A
公开(公告)日：1972-06-13
申请号：US3669774D
申请日：1969-11-20
Applicant: RCA CORP
Inventor： DISMUKES JOHN PICKETT
IPC: C23F4/00 , H01L21/205 , H01L21/302 , H01L21/311 , H01L7/50 , H01L7/54
CPC classification number: H01L21/31116 , Y10S438/959
Abstract: A MECHANICALLY POLISHED SILICON WAFER IS ETECHED TO REMOVE SURFACE DAMAGED MATERIAL AND GIVE A SMOOTH SURFACE BY ETCHING AT A TEMPERATURE OF FROM ABOUT 800 TO 1050*C. IN A GAS MIXTURE CONSISTING OF A CARRIER GAS OF H2, HE OR A MIXTURE THEREOF, A SMALL CONCENTRATION OF A GAS REACTIVE WITH SIO2 SUCH AS HF, CIF3 OR BRF5 AND A SMALL CONCENTRATION OF A GAS REACTIVE SILICON SUCH AS HBR, HI, HCL, CL2, BR2, OR I2.
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