公开(公告)号：US4664937A

公开(公告)日：1987-05-12

申请号：US854247

申请日：1986-04-21

申请人： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

发明人： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

IPC分类号： C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  C23C11/02

CPC分类号： H01J37/3222 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32275 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.

摘要翻译： 通过激活至少一组自由基并将所需的活化基团并入膜中而将半导体合金膜沉积到基底上的方法。

公开(公告)号：US4374901A

公开(公告)日：1983-02-22

申请号：US333197

申请日：1981-12-21

申请人： Carl M. Ferrar

发明人： Carl M. Ferrar

IPC分类号： C23C16/04 ,  C23C16/54 ,  C23C11/02

CPC分类号： C23C16/04 ,  C23C16/545 ,  Y10T428/12438

摘要： Disclosed are very fine wires, of the order of 3-6.times.10.sup.-6 m diameter, having cross sections which are uniform within .+-.3%. A common drawn tungsten wire is electrolytically etched to a fine diameter, of the order of 2-4.times.10.sup.-6 m. The variations in cross sectional area along the etched wire are eliminated by selectively vapor depositing tungsten on the surface while using resistance heating. The very fine uniform wires enhance the performance of devices such as fluidic angular rate motion sensors.

摘要翻译： 公开的是细丝，其直径为3-6×10 -6米，横截面在+/- 3％内是均匀的。 将普通的拉丝钨丝电解蚀刻到2-4×10 -6 m量级的细直径。 通过在使用电阻加热的情况下通过选择性地在表面上沉积钨来消除沿着蚀刻线的横截面积的变化。 非常细的均匀线增强诸如流体角速度运动传感器之类的装置的性能。

公开(公告)号：US4271207A

公开(公告)日：1981-06-02

申请号：US805452

申请日：1977-06-10

申请人： Harald Loser ,  Gerhard Schmidt ,  Wolfgang Warzawa ,  Klaus Wegner

发明人： Harald Loser ,  Gerhard Schmidt ,  Wolfgang Warzawa ,  Klaus Wegner

IPC分类号： C23C16/442 ,  G21C3/62 ,  C23C11/02

CPC分类号： C23C16/442 ,  G21C3/626 ,  Y02E30/38

摘要： Fuel, fertile material and/or absorber material containing particles for fuel and/or absorber elements in nuclear reactors are coated by a process comprising introducing thermally cleavable gases in the reaction space heated to above 1000.degree. C. of a fluidized bed unit with the help of a gas inlet nozzle cooled with a cooling medium and having an elongated inlet tube, decomposiing the cleavable gases after leaving the nozzle, depositing the decomposition products on fuel, fertile material or absorber particles present in the fluidized bed and bringing these coated particles into fuel elements or absorber elements. The cooling medium is solely gaseous and only the portion of the inlet tube for the nozzle tips of the gas inlet nozzles within the axis are cooled and the heat glow penetrating from outside is reduced by heat insulation. An apparatus for carrying out the process is also described.

摘要翻译： 在核反应堆中含有用于燃料和/或吸收剂元件的颗粒的燃料，肥沃材料和/或吸收材料通过包括在加热至高于1000℃的反应空间中引入可热切割气体的方法进行涂覆，该反应空间具有帮助 的气体入口喷嘴，其用冷却介质冷却并具有细长的入口管，在离开喷嘴之后分解可切割气体，将分解产物沉积在存在于流化床中的燃料，可育材料或吸收剂颗粒上并使这些涂覆的颗粒进入燃料 元件或吸收元件。 冷却介质是单独气体的，并且只有用于轴内的气体入口喷嘴的喷嘴尖端的入口管的部分被冷却，并且通过隔热来减少从外部穿透的热辉光。 还描述了用于执行该过程的装置。

公开(公告)号：US4068020A

公开(公告)日：1978-01-10

申请号：US644963

申请日：1975-12-29

申请人： Konrad Reuschel

发明人： Konrad Reuschel

IPC分类号： C01B33/02 ,  C01B33/035 ,  C23C16/24 ,  C30B29/06 ,  H01L21/205 ,  H01L21/331 ,  H01L27/146 ,  H01L29/167 ,  H01L29/73 ,  H01L31/04 ,  C23C13/00 ,  C23C11/02

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/167 ,  Y10S148/016 ,  Y10S148/073 ,  Y10S148/122 ,  Y10S438/903

摘要： A smooth surfaced amorphous silicon layer useful in semiconductor technology is produced by pyrolytic deposition of elemental silicon onto a heated mandrel along with simultaneous pyrolytic deposition of at least one other element selected from Groups IV through VIII and which is non-semiconductive and does not function as a conductivity determining dopant.

摘要翻译： 可用于半导体技术的光滑的表面非晶硅层通过将元素硅热解沉积到加热的心轴上以及同时热解沉积至少一种选自组IV至VIII的其它元素并且不是作为 电导率确定掺杂剂。

公开(公告)号：US3798060A

公开(公告)日：1974-03-19

申请号：US3798060D

申请日：1971-10-28

申请人： WESTINGHOUSE ELECTRIC CORP

发明人： REED W ,  STOLTZ R

IPC分类号： C04B41/88 ,  H05K3/06 ,  H05K3/10 ,  H05K3/14 ,  H05K3/24 ,  H05K3/40 ,  H05K3/42 ,  C23C11/02 ,  C23C3/00

CPC分类号： H05K3/4076 ,  H05K3/062 ,  H05K3/108 ,  H05K3/146

摘要： A method for preparing double-sided circuit boards for electrical circuits wherein a ceramic substrate containing a plurality of holes is metallized by chemical vapor deposition of tungsten on the surface and through the holes and is etched delineate conductive patterns. There is also provided the product produced by this process. The process is preferably used on electronic microcircuits with alumina or beryllia substrates where electrical interconnections between conductive patterns the two outer surfaces and between the outer surfaces and the innerlayers are provided by through-hole metallization.

摘要翻译： 一种用于制备电路的双面电路板的方法，其中包含多个孔的陶瓷衬底通过在表面上并通过孔的钨的化学气相沉积金属化并且被蚀刻描绘导电图案。 还提供了通过此过程生产的产品。 该方法优选用于具有氧化铝或氧化铍基底的电子微电路，其中两个外表面之间以及外表面和内层之间的导电图案之间的电互连由通孔金属化提供。

公开(公告)号：US3772058A

公开(公告)日：1973-11-13

申请号：US3772058D

申请日：1969-10-01

申请人： TEXAS INSTRUMENTS INC

发明人： BLOOM J

IPC分类号： C23C16/02 ,  C23C16/36 ,  C23C11/02 ,  C23C11/08 ,  C23F17/00

CPC分类号： C23C16/36 ,  C23C16/0281 ,  Y10S428/938 ,  Y10T428/12576 ,  Y10T428/12937

摘要： Improved refractory coatings are provided in processes involving the chemical vapor phase deposition of a refractory coating upon a substrate by initially coating the substrate with a continuous adherent layer of substantially pure elemental material. For example, in a process for the vapor deposition of titanium carbonitride on a substrate such as stainless steel, by the contact of vaporous reactants containing titanium, carbon, and nitrogen, the substrate is initially plated with a continuous adherent layer of pure nickel, and the titanium carbonitride coating is applied over the nickel.

摘要翻译： 在通过用基本上纯的元素材料的连续粘附层开始涂覆基底的方法中提供了改进的耐火涂层，所述方法涉及将耐火涂层化学气相沉积在基底上。 例如，在用于在诸如不锈钢的基底上气相沉积碳氮化钛的方法中，通过与含有钛，碳和氮的气态反应物的接触，基底最初镀有纯镍的连续粘附层， 碳氮化钛涂层涂覆在镍上。

公开(公告)号：US3753768A

公开(公告)日：1973-08-21

申请号：US3753768D

申请日：1970-10-30

申请人： SUMITOMO CHEMICAL CO

发明人： INOUE Y ,  KONDO Y ,  ICHIKI E ,  IIDA K

IPC分类号： C23C18/10 ,  C23C8/02 ,  C23C16/56 ,  C23C11/02

CPC分类号： C23C8/02 ,  C23C16/56

摘要： Aluminum plating according to which aluminum film formed has no cracks and pin-holes on its surface, a uniform thickness, excellent luster and is strongly bonded to the substrate can be attained by heat treating a substrate covered with aluminum at 400* C the melting point of aluminum for 10 seconds 30 minutes in an inert atmosphere said heat treatment being preceded by or followed by treating of the covered substrate with a surface treating agent comprising active hydrogen-containing compound, oxygen or halogen and thereafter taking out thus treated substrate into the air.

摘要翻译： 通过在400℃下热处理覆盖有铝的基板，可以获得在400℃下热处理覆盖有铝的基板，从而可以获得在其表面上没有形成铝膜的表面上没有裂纹和针孔的铝电镀，均匀的厚度，优异的光泽并且牢固地结合到基板上 的铝在惰性气氛中持续10分钟30分钟，所述热处理之前或之后是用包含含活性氢的化合物，氧或卤素的表面处理剂处理被覆盖的基材，然后将如此处理的基材取出到空气中 。

公开(公告)号：US3643625A

公开(公告)日：1972-02-22

申请号：US3643625D

申请日：1969-10-07

申请人： CARL HERRMANN ASSOCIATES INC

发明人： MAHL GUNARD O B

IPC分类号： C23C14/50 ,  C23C11/02

CPC分类号： C23C14/505

摘要： A thin-film deposition apparatus having a holder and a plurality of racks. Each of the racks has a surface which has the conformation of a portion of the surface of a sphere. Means is provided for rotatably mounting the racks on the holder in such a manner that said surfaces of the racks lie generally on the surface of a common sphere. Means is provided for rotating the holder upon an axis centrally disposed with respect to the racks and for rotating the racks about their own axes of rotation with respect to the holder.

摘要翻译： 一种具有保持器和多个机架的薄膜沉积设备。 每个机架具有表面，其具有球体表面的一部分的构造。 提供了用于将支架可旋转地安装在支架上的装置，使得支架的所述表面大致位于普通球体的表面上。 提供了用于使保持器在相对于机架居中设置的轴线上旋转的装置，并且用于相对于支架围绕其自身的旋转轴线旋转机架。

公开(公告)号：US3589935A

公开(公告)日：1971-06-29

申请号：US3589935D

申请日：1968-05-31

申请人： HARRY BRILL EDWARDS ,  KENNETH K SPEIRS

发明人： BRILL-EDWARDS HARRY ,  SPEIRS KENNETH K

IPC分类号： C23C10/36 ,  C23C10/34 ,  C23C10/48 ,  C23C11/02

CPC分类号： C23C10/34

摘要： IN PACK IMPREGNATION OR CEMENTATION PROCESSES FOR THE DIFFUSION COATING OF ONE OR MORE METALS INTO THE SURFACE OF METAL ARTICLES, IMPROVED TECHNIQUES AND COMPOSITIONS ARE PROVIDED FOR THE DIFFUSION COATING F METALS SUCH AS ALLUMINUM AND ANTIMONY INTO THE SURFACE OF A VARIETY OF FERROUS AND OTHER METAL ARTICLES EMBEDDED IN A POWDERED COATING PACK AT COATING TEMPERATURES CONSIDERABLY LOWER (BY AS MUCH AS 200*F.) THAN THOSE TEMPERATURES REQUIRED BY CONVENTIONAL TECHNIQUES TO PROVIDE EFFECTIVE DIFFUSION COATING OF THE SAME MATERIALS. THIS IS ACCOMPLISHED BY PROVIDING IN THE COATING PACK AN ACCELERATING COMPONENT (SUCH AS EITHER RELATIVELY VOLATILE METALS AS CADMIUM, LEAD, ZINC, ETC., OR CERTAIN LONG CHAIN ORGANIC COMPOUNDS) WHICH DO NOT ULTIMATELY FORM A SUBSTANTIAL OR SIGNIFICANT PART OF THE DIFFUSION COATING, BUT DO ACT IN THE COATING PACK TO ACCELERATE THE DIFFUSION OF THE COATING METALS INTO THE ARTICLES BEING COATED AT LOWER TEMPERATURES TO ACHIEVE INCREASED COATING DEPOSITION AT TEMPERATURES LOWER THAN OTHERWISE OBTAINABLE, AND PERMITTING SATISFACTORY COATINGS AT TEMPERATURES BELOW THOSE AT WHICH AT WHICH SOME UNDESIRED CRYSTALLOGRAPHIC OR METALLOGRAPHIC OR PHYSICAL PROPERTY CHANGE WOULD OCCUR IN THE METAL ARTICLES BEING COATED.

公开(公告)号：US3578496A

公开(公告)日：1971-05-11

申请号：US3578496D

申请日：1968-03-28

申请人： SIEMENS AG

发明人： ZIEGLER GUNTHER ,  WIRTH BARBARA

IPC分类号： C23C16/54 ,  C23C16/56 ,  H01L39/24 ,  C23C11/02 ,  H01V11/00

CPC分类号： C23C16/545 ,  C23C16/56 ,  H01L39/24 ,  Y10S505/819 ,  Y10T29/49014

摘要： DESCRIBED IS A METHOD OF IMPROVING THE SUPERCONDUCTIVE PROPERTIES OF LAYERS OF THE INTERMETALLIC COMPOUND NIOBIUM-TIN (NB3SN) WHICH ARE PRECIPITATED ON A HEATED CARRIER BY HYDROGEN REDUCTION OF HALIDES OF THE ELEMENTS NIOBIUM AND TIN. THE METHOD IS CHARACTERIZED IN THAT THE COATED CARRIER IS SUBJECTED TO A HEAT PROCESSING, UNDER PROTECTIVE GAS, WHICH LOWERS THE HYDROGEN CONTENT OF THE NIOBIUM-TIN LAYER.