Abstract:
Photomasks for microcircuit technology are prepared by evaporating cyclopentadienyl derivatives of transition metals, contacting the vapor with a heated substrate in an oxygencontaining atmosphere to form transition metal oxide films on the substrate and removing part of the film to form a desired pattern.
Abstract:
Method for depositing a luminescent film comprising vaporizing into a nonreactive carrier gas at least one betadiketonate of yttrium, lanthanum, gadolinium, and lutetium, and at least one beta-diketonate of a lanthanide that is an activator for the luminescent film; and then contacting the vapor-laden carrier gas with a heated substrate. The beta-diketonates are thermally decomposed to form oxides which deposit on the substrate. The method is continued until the desired film thickness is deposited. There may be one or more reactant gases present for preventing the deposition of carbon and/or for producing a luminescent sulfide. The carrier gas may contain a vanadiumcontaining beta-diketonate for producing a luminescent vanadate. The luminescent film may be annealed at temperatures above 500*C to enhance the luminescence of the film.