公开(公告)号：US3825449A

公开(公告)日：1974-07-23

申请号：US39362773

申请日：1973-08-31

Applicant: RCA CORP

Inventor： MARINELLI D ,  STOCKTON T

IPC: H01L33/00 ,  C30B19/00 ,  C30B19/06 ,  C30B19/12 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063 ,  H01L21/02521 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02639

Abstract: THE SURFACE OF THE SUBSTRATE ON WHICH THE EPITAXIAL LAYER IS TO BE DEPOSITED IS COATED ALONG AT LEAST ONE EDGE PORTION WITH A STRIP OF A NON-REACTTIVE MATERIAL. AN EPITAXIAL LAYER IS THEN DEPOSITED ON THE SUBSTRATE BY CONVENTIONAL LIQUID PHASE TECHNIQUES BY MOVING THE SUBSTRATE THROUGH A SUITABLE DEPOSITION SOLUTION WITH THE SUBSTRATE PREFERABLY ORIENTED SO AS TO MAKE THE STRIP-COATED EDGE THE LEADING EDGE.

公开(公告)号：US3753801A

公开(公告)日：1973-08-21

申请号：US3753801D

申请日：1971-12-08

Applicant: RCA CORP

Inventor： LOCKWOOD H ,  MARINELLI D

IPC: C30B19/00 ,  C30B19/06 ,  C30B19/10 ,  H01L21/00 ,  H01L21/208 ,  H01L7/38 ,  B05C3/02

CPC classification number: C30B19/063 ,  C30B19/10 ,  C30B19/106 ,  H01L21/00

Abstract: One or more epitaxial layers of a semiconductor material are deposited on a substrate by providing for each epitaxial layer to be deposited a separate solution of a semiconductor material dissolved in a molten metal solvent. Each of the solutions is of a small volume and a weight is provided on each solution to spread the solution out in the form of a thin layer. The substrate is brought into contact with the solution and the solution is cooled to deposit the epitaxial layer on the substrate. Since the solution is in the form of a thin layer, only a minimum of platelets of the semiconductor material are formed in the solution during the deposition of the epitaxial layer so that the epitaxial layer has a smooth, even surface. To deposit a plurality of epitaxial layers on the substrate, the substrate is successively brought into contact with each solution which is then cooled to deposit an epitaxial layer. Each solution may be exactly saturated with the semiconductor material by bringing a body of semiconductor material into contact with the solution prior to bringing the substrate into contact with the solution.

Abstract translation: 将半导体材料的一个或多个外延层沉积在衬底上，为每个外延层沉积溶解在熔融金属溶剂中的半导体材料的单独溶液。 每种溶液都是小体积的，并且在每个溶液上提供重量以将溶液以薄层的形式传播出来。 使衬底与溶液接触，并将溶液冷却以将外延层沉积在衬底上。 由于溶液是薄层的形式，因此在外延层的沉积期间仅在溶液中形成最小的半导体材料的片状，使得外延层具有光滑的均匀的表面。 为了在衬底上沉积多个外延层，衬底依次与每个溶液接触，然后冷却沉积外延层。 在使衬底与溶液接触之前，通过使半导体材料体与溶液接触，可以使半导体材料完全饱和。