公开(公告)号：US3864592A

公开(公告)日：1975-02-04

申请号：US34373673

申请日：1973-03-22

Applicant: RCA CORP

Inventor： PANKOVE JACQUES ISAAC

IPC: H01L33/00 ,  G09F9/33 ,  H05B33/12 ,  H05B33/14

CPC classification number: G09F9/33 ,  H05B33/12

Abstract: One surface of a transparent substrate is coated with a layer of an optically transparent, electrically conductive material, such as conductive gallium nitride. A body of insulating gallium nitride is disposed on the electrically conductive layer, and metal electrodes are provided on the insulating gallium nitride layer in a desired display pattern. A voltage bias applied between the electrically conductive layer and one or more of the metal electrodes generates light within the insulating gallium nitride body. The light replicates the shape of the electrode or electrodes which are biased and can be seen through the substrate.

Abstract translation: 透明基板的一个表面涂覆有诸如导电氮化镓的光学透明导电材料层。 绝缘氮化镓体设置在导电层上，金属电极以期望的显示图案设置在绝缘氮化镓层上。 施加在导电层和一个或多个金属电极之间的电压偏置在绝缘氮化镓体内产生光。 光复制被偏压并且可以通过衬底看到的电极或电极的形状。

公开(公告)号：US3667007A

公开(公告)日：1972-05-30

申请号：US3667007D

申请日：1970-02-25

Applicant: RCA CORP

Inventor： KRESSEL HENRY ,  PANKOVE JACQUES ISAAC

IPC: H01J1/30 ,  H01J1/308 ,  H01L15/00

CPC classification number: H01J1/308

Abstract: An electron emitter comprising a body of a semiconductor material which is adapted to generate light therein when properly biased but which is a poor absorber of the generated light. On a surface of the body is a thin region of a semiconductor material which is a good absorber of the generated light and which has an index of refraction which substantially matches the index of refraction of the material of the body. The thin semiconductor material region is adapted to absorb the light from the body and convert the light into free electrons. On the surface of the semiconductor material layer is a thin film of an electropositive work function reducing material which is adapted to emit the electrons formed in the semiconductor material layer.

Abstract translation: 一种电子发射器，包括半导体材料的主体，其适于在适当偏置时产生光，但是其是所生成的光的不良吸收体。 在身体的表面上是半导体材料的薄区域，其是所产生的光的良好吸收体，并且其折射率基本上与身体的材料的折射率相匹配。 薄半导体材料区域适于吸收来自身体的光并将光转换成自由电子。 在半导体材料层的表面上是适于发射形成在半导体材料层中的电子的正电功能降低材料的薄膜。

公开(公告)号：US3922703A

公开(公告)日：1975-11-25

申请号：US45740574

申请日：1974-04-03

Applicant: RCA CORP

Inventor： PANKOVE JACQUES ISAAC

IPC: H01L27/00 ,  H01L27/12 ,  H01L33/00

CPC classification number: H01L27/00 ,  H01L27/12 ,  H01L33/00 ,  Y10S148/059 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/113 ,  Y10S148/15

Abstract: A gallium nitride electroluminescent semiconductor element and a silicon semiconductor element are on the same substrate. The gallium nitride semiconductor element and silicon semiconductor element are electrically connected with the silicon semiconductor element as a driving or switching circuit for the gallium nitride electroluminescent semiconductor element.

Abstract translation: 氮化镓电致发光半导体元件和硅半导体元件在同一衬底上。 氮化镓半导体元件和硅半导体元件与作为氮化镓电致发光半导体元件的驱动或开关电路的硅半导体元件电连接。

公开(公告)号：US3865655A

公开(公告)日：1975-02-11

申请号：US39982273

申请日：1973-09-24

Applicant: RCA CORP

Inventor： PANKOVE JACQUES ISAAC

IPC: C30B31/06 ,  C30B31/18 ,  H01L21/00 ,  H01L21/22 ,  H01L21/223 ,  H01L7/44

CPC classification number: H01L21/2233 ,  C30B29/40 ,  C30B31/06 ,  C30B31/185 ,  H01L21/00 ,  Y10S148/113 ,  Y10S438/909

Abstract: A nitride semiconductor crystal is heated in an ammonia atmosphere and exposed to vaporized acceptor impurities to introduce the impurities into the crystal.

Abstract translation: 氮化物半导体晶体在氨气氛中加热并暴露于汽化的受主杂质以将杂质引入晶体。