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公开(公告)号：US20180375432A1
公开(公告)日：2018-12-27
申请号：US16119444
申请日：2018-08-31
发明人： Tetsuo SATO , Tomoaki UNO , Hirokazu KATO , Nobuyoshi MATSUURA
IPC分类号： H02M3/158 , H01L29/78 , H01L49/02 , H01L29/40 , H01L29/417 , H03K17/16 , H03K7/08 , H02M1/08 , H01L27/06 , H01L29/49 , H01L29/423 , H02M1/44 , H03K17/687
摘要： A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.
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公开(公告)号：US20240321824A1
公开(公告)日：2024-09-26
申请号：US18187300
申请日：2023-03-21
发明人： Tetsuo SATO , Jianghong DING , Yonggoo EOM
IPC分类号： H01L23/00 , H01L27/088 , H03K17/687
CPC分类号： H01L24/85 , H01L24/45 , H01L27/088 , H03K17/6871 , H03K17/6877 , H01L2924/1426 , H03K2217/0063
摘要： Circuits and devices for a motor driver are described. A hybrid integrated circuit (IC) can include a driver IC, a first IC, and a plurality of second ICs. The first IC can include a plurality of high-side metal-oxide-semiconductor field-effect transistors (MOSFETs). The first IC can further include a common drain terminal connected to drains of the plurality of high-side MOSFETs. Each one of the plurality of second ICs can include a respective low-side MOSFET. The hybrid IC can further include a first set of bonding wires connecting the driver IC to the first IC. The hybrid IC can further include a second set of bonding wires connecting the driver IC to the plurality of second ICs. The hybrid IC can further include a third set of bonding wires connecting the first IC to the plurality of second ICs.
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公开(公告)号：US20240195401A1
公开(公告)日：2024-06-13
申请号：US18064340
申请日：2022-12-12
发明人： Tetsuo SATO
IPC分类号： H03K17/042
CPC分类号： H03K17/04206 , H03K17/0822
摘要： Semiconductor devices for driving transistors in a power device are described. A semiconductor device can include a voltage source configured to provide a fixed bias voltage to a first device implemented as a common gate device. The semiconductor device can further include a second device connected in series with the first device. The current output of the second device can be connected to a source terminal of the first device. The semiconductor device can further include a driver configured to drive the second device to perform current control on the first device.
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公开(公告)号：US20190113393A1
公开(公告)日：2019-04-18
申请号：US16163411
申请日：2018-10-17
发明人： Tetsuo SATO , Tsuguyoshi HIROOKA
摘要： A temperature sensor is disclosed. In one embodiment, the temperature sensor takes form in an integrated circuit that includes a plurality of first diodes connected in series between a first node and another node, and a plurality of second diodes connected in series between a second node and the other node. The integrated circuit includes a sub circuit coupled to the first and second nodes. The sub circuit the circuit is configured to generate an output voltage that depends on first and second voltages at the first and second nodes, respectively. The integrated circuit includes a first current source for generating a constant first current, wherein the first current or substantially all of the first current passes through the plurality of first diodes. A second current source is also provided on the integrated circuit for generating a constant second current, wherein the second current or substantially all of the second current passes through the plurality of second diodes. The plurality of first and second diodes are arranged on the integrated circuit so that they operate at a substantially equal temperature T.
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公开(公告)号：US20190103401A1
公开(公告)日：2019-04-04
申请号：US16208335
申请日：2018-12-03
发明人： Kenji YOSHIDA , Tetsuo SATO , Shigeru MAETA , Toshio KIMURA
IPC分类号： H01L27/06 , H03K7/08 , H01L23/538 , H01L29/786 , H01L25/065 , H01L27/12 , H01L23/528
摘要： A semiconductor die is disclosed upon which is formed direct current (DC) isolated first and second circuits. The first circuit is configured for electrical connection to a first ground. The second circuit is configured for electrical connection to a second ground. The first and second grounds can be at different potentials. The first and second circuits were formed using front end of line (FEOL) and back end of line (BEOL) processes. The first circuit includes a plurality of first devices, such as transistors, which were formed during the FEOL process, and the second circuit includes only second devices, such as transistors, which were formed during the BEOL process.
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公开(公告)号：US20180351548A1
公开(公告)日：2018-12-06
申请号：US16102516
申请日：2018-08-13
发明人： Tetsuo SATO , Koichi YAMAZAKI
IPC分类号： H03K17/687 , H03K17/567 , H03K17/0416 , H03K17/74 , H02M7/00
CPC分类号： H03K17/6871 , H02M7/003 , H03K17/04163 , H03K17/567 , H03K17/74 , Y02B70/1483
摘要： An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.
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公开(公告)号：US20240243954A1
公开(公告)日：2024-07-18
申请号：US18155999
申请日：2023-01-18
发明人： Tetsuo SATO , Jiang CHEN , Qiu SHA
CPC分类号： H04L27/06 , H01L23/66 , H04L25/0266 , H01L2223/6611
摘要： Systems, devices, and methods for isolating digital signals are described. A carrier signal can be modulated using a first signal to generate a first modulated signal. The carrier signal and the first modulated signal can be transmitted through a forward path in an isolation barrier, where transmitting the carrier signal through the isolation barrier can transform the carrier signal into a delayed carrier signal. The first modulated signal can be demodulated to recover the first signal. The delayed carrier signal can be modulated using a second signal to generate a second modulated signal. The delayed carrier signal and the second modulated signal can be transmitted through a return path in the isolation barrier, where the return path and the forward path has opposite directions.
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公开(公告)号：US20240170205A1
公开(公告)日：2024-05-23
申请号：US18057816
申请日：2022-11-22
IPC分类号： H01F38/14 , H01L23/522 , H02M1/088 , H02M3/156
CPC分类号： H01F38/14 , H01L23/5227 , H02M1/088 , H02M3/156 , H01F2038/143 , H01L24/48 , H01L2224/48137
摘要： Semiconductor devices for implementing an isolator are described. The semiconductor device can include a first chip including at least a first coil and a second coil magnetically coupled in a vertical alignment and isolated by a first insulator in the first chip. The semiconductor device can further include a second chip including at least a third coil and a fourth coil magnetically coupled in a vertical alignment and isolated by a second insulator in the second chip. The semiconductor device can include at least one bonding wire that connects the second coil in the first chip to the fourth coil in the second chip.
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公开(公告)号：US20200295583A1
公开(公告)日：2020-09-17
申请号：US16889407
申请日：2020-06-01
发明人： Kota KANO , Tetsuo SATO , Shigeru MAETA
IPC分类号： H02J7/00
摘要： A simple battery and battery charger. In one embodiment, the battery charger includes an output terminal that provides a charging voltage Vout and charging current Iout. The battery is contained in a battery pack having an input terminal, which can be connected to the output terminal in order to receive Vout and Iout. The battery charger may include a first circuit for controlling the magnitude of Vout. The battery pack may include a second circuit that generates a control signal when the output terminal is connected to the input terminal. The first circuit is configured to control the magnitude of Vout based on the control signal.
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