公开(公告)号：US20150295045A1

公开(公告)日：2015-10-15

申请号：US14746831

申请日：2015-06-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shigeo TOKUMITSU ,  Akio UENISHI

IPC: H01L29/10 ,  H01L29/36

CPC classification number: H01L29/1045 ,  H01L21/823418 ,  H01L21/823456 ,  H01L21/823475 ,  H01L21/823493 ,  H01L21/823814 ,  H01L21/82385 ,  H01L21/823871 ,  H01L21/823892 ,  H01L27/0207 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/41758 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/7836

Abstract: The high voltage transistor includes a first impurity layer, a second impurity layer formed inside the first impurity layer, so as to put the second impurity layer between them, a pair of third impurity layers and fourth impurity layers formed inside the first impurity layer, a fifth impurity layer formed from the uppermost surface of the first impurity layer to the inside of the first impurity layer so as to protrude along the main surface in the direction where the second impurity layer is disposed, and a conductive layer formed above the uppermost surface of the second impurity layer. The concentration of the impurity in the fourth impurity layer is higher than the concentration of the impurity in the third and the fifth impurity layers, and the concentration of the impurity in the fifth impurity layer is higher than the concentration of the impurity in the third impurity layer.

Abstract translation: 高压晶体管包括第一杂质层，形成在第一杂质层内的第二杂质层，以将第二杂质层置于它们之间，形成在第一杂质层内部的一对第三杂质层和第四杂质层， 第五杂质层从第一杂质层的最上表面到第一杂质层的内部沿着主表面沿着第二杂质层的方向突出，并且形成在第一杂质层的最上表面上方的导电层 第二杂质层。 第四杂质层中的杂质浓度高于第三和第五杂质层中的杂质浓度，第五杂质层中的杂质浓度高于第三杂质中的杂质浓度 层。