公开(公告)号：US20140235020A1

公开(公告)日：2014-08-21

申请号：US14261497

申请日：2014-04-25

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Daisuke ARAI ,  Yoshito NAKAZAWA ,  Ikuo HARA ,  Tsuyoshi KACHI ,  Yoshinori HOSHINO ,  Tsuyoshi TABATA

IPC: H01L29/66

CPC classification number: H01L29/66325 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/66333 ,  H01L29/7395

Abstract: Techniques capable of improving the yield of IGBTs capable of reducing steady loss, turn-off time, and turn-off loss are provided. Upon formation of openings in an interlayer insulting film formed on a main surface of a substrate, etching of a laminated insulating film of a PSG film and an SOG film and a silicon oxide film is once stopped at a silicon nitride film. Then, the silicon nitride film and the silicon oxide film are sequentially etched to form the openings. As a result, the openings are prevented from penetrating through an n-type source layer and a p+-type emitter layer having a thickness of 20 to 100 nm and reaching the substrate.

Abstract translation: 提供了能够提高能够降低稳定损耗，关断时间和关断损耗的IGBT的产量的技术。 在形成在基板的主表面上的层间绝缘膜中形成开口时，在氮化硅膜上一次停止对PSG膜的叠层绝缘膜，SOG膜和氧化硅膜的蚀刻。 然后，依次蚀刻氮化硅膜和氧化硅膜以形成开口。 结果，防止了开口穿过厚度为20至100nm的n型源极层和p +型发射极层并到达衬底。

公开(公告)号：US20130207158A1

公开(公告)日：2013-08-15

申请号：US13764479

申请日：2013-02-11

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Daisuke ARAI ,  Sakae KUBO ,  Yuta IKEGAMI

IPC: H01L29/739

CPC classification number: H01L29/7393 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/66333 ,  H01L29/7395

Abstract: To improve a manufacture yield of semiconductor devices each including an IGBT, an active region defined by an insulating film and where an element of an IGBT is formed has a first long side and a second long side spaced at a predetermined distance apart from each other and extended in a first direction in a planar view. One end of the first long side has a first short side forming a first angle with the first long side, and one end of the second long side has a second short side forming a second angle with the second long side. The other end of the first long side has a third short side forming a third angle with the first long side, and the other end of the second long side has a fourth short side forming a fourth angle with the second long side. The first angle, the second angle, the third angle, and the fourth angle are in a range larger than 90 degrees and smaller than 180 degrees.

Abstract translation: 为了提高包括IGBT的半导体器件的制造成品率，由绝缘膜限定的有源区域和形成有IGBT的元件的第一长边和第二长边彼此隔开预定距离， 在平面视图中沿第一方向延伸。 第一长边的一端具有与第一长边形成第一角度的第一短边，第二长边的一端具有与第二长边形成第二角度的第二短边。 第一长边的另一端具有与第一长边形成第三角度的第三短边，而第二长边的另一端具有与第二长边形成第四角度的第四短边。 第一角度，第二角度，第三角度和第四角度在大于90度且小于180度的范围内。