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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180052338A1

    公开(公告)日：2018-02-22

    申请号：US15798780

    申请日：2017-10-31

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Hiroyuki KUNISHIMA ,  Yasutaka NAKASHIBA ,  Masaru WAKABAYASHI ,  Shinichi WATANUKI

    IPC: G02F1/025 ,  G02B6/132 ,  H01L23/532 ,  G02B6/125 ,  G02B6/28 ,  G02B6/12

    Abstract: A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160293481A1

    公开(公告)日：2016-10-06

    申请号：US15068547

    申请日：2016-03-12

    Applicant: Renesas Electronics Corporation

    Inventor： Tatsuya USAMI ,  Keiji SAKAMOTO ,  Hiroyuki KUNISHIMA

    IPC: H01L21/768 ,  G02B6/134 ,  G02B6/136 ,  G02F1/025 ,  H01L23/544 ,  G02B6/122

    CPC classification number: G02B6/1347 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/121 ,  G02F1/025 ,  H01L23/562

    Abstract: A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.

    Abstract translation: 在构成SOI晶片的绝缘膜上形成由半导体层形成的矩形光波导，光学移相器和光调制器，然后去除形成在SOI晶片的后表面上的后绝缘膜。 此外，在绝缘膜的平面图中看到，在与矩形光波导，光移相器和光调制器不重叠的位置处形成有从绝缘膜的上表面开始的第一深度的多个沟槽 。 结果，即使当SOI晶片后来安装在包括在半导体制造装置中的静电卡盘上时，也可以容易地从SOI晶片释放电荷，所以电荷不太可能积聚在半导体制造装置的背面 SOI晶圆。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150380480A1

    公开(公告)日：2015-12-31

    申请号：US14747891

    申请日：2015-06-23

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Ken OZAWA ,  Hiroyuki KUNISHIMA

    IPC: H01L49/02 ,  H01L23/522 ,  H01L27/108 ,  H01L27/06

    CPC classification number: H01L27/10814 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/53295 ,  H01L27/0629 ,  H01L27/10855 ,  H01L28/87 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm2], the following expression (1) is satisfied. C/A≦1.98 [nF/μm2]  (1) The elution of the second electrode constituting the capacitor at the lower ends of the coupling holes is suppressed.

    Abstract translation: 一种具有电容器的半导体器件，包括电耦合到晶体管的第一电极和与第一电极分离并被层间绝缘膜覆盖的第二电极，其中在层间绝缘膜中形成多个耦合孔，并且位于 在下端与第二电极接触; 并且当第二电极的电容由C [nF]表示，并且耦合孔的下端的总面积由A [μm2]表示时，满足以下表达式（1）。 C / A＆nlE; 1.98 [nF /μm2]（1）抑制了在耦合孔的下端构成电容器的第二电极的溶出。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20160334573A1

    公开(公告)日：2016-11-17

    申请号：US15152117

    申请日：2016-05-11

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Hiroyuki KUNISHIMA ,  Yasutaka NAKASHIBA ,  Masaru WAKABAYASHI ,  Shinichi WATANUKI

    IPC: G02B6/122 ,  G02B6/28 ,  H01L23/522 ,  G02F1/025 ,  H01L23/528 ,  H01L23/532

    CPC classification number: G02F1/025 ,  G02B6/125 ,  G02B6/132 ,  G02B6/2852 ,  G02B2006/12061 ,  G02B2006/12142 ,  G02B2006/12147 ,  G02F2201/08 ,  H01L23/53214 ,  H01L23/53228 ,  H01L2224/05

    Abstract: A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.

    Abstract translation: 在具有第一反射率的光学定向耦合器和第一层布线之间形成具有比第一反射率低的第二反射率（50％或更低）的低反射率膜。 因此，即使当第一层布线形成在光学定向耦合器上方时，由第一层布线反射的光对通过光学定向耦合器的第一光波导和第二光波导传播的光信号的影响可以 减少 因此，第一层布线可以布置在光学定向耦合器的上方，并且第一层布线的布局的限制被放宽。

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