公开(公告)号：US20190198703A1

公开(公告)日：2019-06-27

申请号：US16188985

申请日：2018-11-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoo NAKAYAMA ,  Shinichi WATANUKI ,  Futoshi KOMATSU ,  Teruhiro KUWAJIMA ,  Takashi OGURA ,  Hiroyuki OKUAKI ,  Shigeaki SHIMIZU

IPC: H01L31/105 ,  H01L31/18 ,  G02B6/122 ,  G02B6/136

Abstract: In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NR1 is formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NR1 respectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BM1 is formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NR1 is not formed within the semiconductor layer NR1.

公开(公告)号：US20190196231A1

公开(公告)日：2019-06-27

申请号：US16182259

申请日：2018-11-06

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tohru KAWAI ,  Shinichi WATANUKI ,  Yasutaka NAKASHIBA

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2203/50

Abstract: The performances of a semiconductor device are improved. The semiconductor device includes an insulation layer, an optical waveguide part formed over the insulation layer, and including a p type semiconductor region and an n type semiconductor region formed therein, and an interlayer insulation film formed over the insulation layer in such a manner as to cover the optical waveguide part. At the first portion of the optical waveguide part, in a cross sectional view perpendicular to the direction of extension of the optical waveguide part, the n type semiconductor region is arranged at the central part of the optical waveguide part, and the p type semiconductor region is arranged in such a manner as to surround the entire circumference of the n type semiconductor region.

公开(公告)号：US20190196099A1

公开(公告)日：2019-06-27

申请号：US16183319

申请日：2018-11-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shinichi WATANUKI ,  Yasutaka NAKASHIBA

IPC: G02B6/122 ,  H01L23/532 ,  H01L21/02 ,  H01L25/16

CPC classification number: G02B6/1223 ,  H01L21/0214 ,  H01L21/02219 ,  H01L23/5329 ,  H01L25/167

Abstract: Two optical waveguides and an insulating film provided to cover the optical waveguides are formed over an insulating layer. Two wirings and a heater metal wire are formed over the insulating film via an insulating film different from the above insulating film. The latter insulating film is thinner than the former insulating film, and has a higher refractive index than the former insulating film. The leaked light from either of the two optical waveguides can be suppressed or prevented from being reflected by any one of the two wirings, the heater metal wire, and the like to travel again toward the two optical waveguides by utilizing the difference between the refractive indices of the two insulating films.

公开(公告)号：US20180299706A1

公开(公告)日：2018-10-18

申请号：US15878619

申请日：2018-01-24

Applicant: Renesas Electronics Corporation

Inventor： Shinichi KUWABARA ,  Yasutaka NAKASHIBA ,  Tetsuya IIDA ,  Shinichi WATANUKI

IPC: G02F1/025 ,  H01L29/06 ,  H01L29/16 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/02

CPC classification number: G02F1/025 ,  G02F2001/0151 ,  G02F2201/302 ,  G02F2202/105 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/31116 ,  H01L29/0657 ,  H01L29/16

Abstract: To reduce a production cost of a semiconductor device and provide a semiconductor device having improved characteristics. A grating coupler has a plurality of projections separated from each other in an optical waveguide direction and a slab portion formed between any two of the projections adjacent to each other and formed integrally with them; a MOS optical modulator has a projection extending in the optical waveguide direction and slab portions formed on both sides of the projection, respectively, and formed integrally therewith. The projection of the grating coupler and the MOS optical modulator is formed of a first semiconductor layer, a second insulating layer, and a second semiconductor layer stacked successively on a first insulating layer, while the grating coupler and the MOS optical modulator each have a slab portion formed of the first semiconductor layer.

公开(公告)号：US20180138325A1

公开(公告)日：2018-05-17

申请号：US15797230

申请日：2017-10-30

Applicant: Renesas Electronics Corporation

Inventor： Shinichi WATANUKI ,  Futoshi KOMATSU ,  Tomoo NAKAYAMA ,  Takashi OGURA ,  Teruhiro KUWAJIMA

IPC: H01L31/028 ,  H01L31/0232 ,  H01L31/02

CPC classification number: H01L31/028 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/105

Abstract: Germanium (Ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. A semiconductor device is provided with a Ge photodiode including an n-type germanium layer, and a plug capacitively coupled to the n-type germanium layer. In other words, the n-type germanium layer of the Ge photodiode and the plug are not in direct contact with each other but are capacitively coupled to each other.

公开(公告)号：US20180136390A1

公开(公告)日：2018-05-17

申请号：US15785560

申请日：2017-10-17

Applicant: Renesas Electronics Corporation

Inventor： Shinichi WATANUKI ,  Yasutaka NAKASHIBA

IPC: G02B6/122 ,  H01L33/62 ,  G02B6/12

CPC classification number: G02B6/122 ,  G02B6/12002 ,  G02B6/4274 ,  G02B2006/12126 ,  G02B2006/12197 ,  H01L33/62 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: In a semiconductor device, first dummy patterns including a different material from transmission lines (first optical waveguide and second optical waveguide) are formed in a first region close to the transmission lines, and second dummy patterns, which include the same material as the transmission lines and do not function as the transmission lines, are formed in a second region apart from the transmission lines.

公开(公告)号：US20190196110A1

公开(公告)日：2019-06-27

申请号：US16183433

申请日：2018-11-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yasutaka NAKASHIBA ,  Shinichi WATANUKI

IPC: G02B6/30 ,  G02B6/13 ,  G02B6/122

Abstract: An optical waveguide formed at the same layer as that of a microscopic optical device and a spot size converter largely different in size are integrally formed. A semiconductor device has an optical waveguide part functioning as a spot size converter. The optical waveguide part includes a plurality of optical waveguide bodies penetrating through an interlayer insulation layer in the thickness direction.

公开(公告)号：US20180246276A1

公开(公告)日：2018-08-30

申请号：US15961435

申请日：2018-04-24

Applicant: Renesas Electronics Corporation

Inventor： Yasutaka NAKASHIBA ,  Shinichi WATANUKI

IPC: G02B6/122 ,  G02B6/136 ,  G02F1/025 ,  G02B6/12 ,  G02B6/34

CPC classification number: G02B6/122 ,  G02B6/136 ,  G02B6/34 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12107 ,  G02F1/025

Abstract: A semiconductor device including an optical waveguide and a p-type semiconductor portion is configured as follows. The optical waveguide includes: a first semiconductor layer formed on an insulating layer; an insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the insulating layer. The p-type semiconductor portion includes the first semiconductor layer. The film thickness of the p-type semiconductor portion is smaller than that of the optical waveguide. By forming the insulating layer between the first semiconductor layer and the second semiconductor layer, control of the film thicknesses of the optical waveguide and the p-type semiconductor portion is facilitated. Specifically, when the unnecessary second semiconductor layer is removed by etching in a step of forming the p-type semiconductor portion, the insulating layer which is the lower layer functions as an etching stopper, and the film thickness of the p-type semiconductor portion can be easily adjusted.

公开(公告)号：US20180083154A1

公开(公告)日：2018-03-22

申请号：US15703525

申请日：2017-09-13

Applicant: Renesas Electronics Corporation

Inventor： Teruhiro KUWAJIMA ,  Shinichi WATANUKI ,  Futoshi KOMATSU ,  Tomoo NAKAYAMA

IPC: H01L31/105 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/105 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/1804 ,  H01L31/1808 ,  Y02E10/547 ,  Y02P70/521

Abstract: To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed. The coupling hole has, on the inner wall thereof, a barrier metal film and the barrier metal film has thereon a first-layer wiring made of a tungsten film. Tungsten hardly diffuses from the tungsten film into the i type germanium layer even when a thermal stress is applied, making it possible to prevent the resulting germanium photoreceiver from having diode characteristics deteriorated by the thermal stress.

公开(公告)号：US20170031094A1

公开(公告)日：2017-02-02

申请号：US15186610

申请日：2016-06-20

Applicant: Renesas Electronics Corporation

Inventor： Yasutaka NAKASHIBA ,  Shinichi WATANUKI

IPC: G02B6/122 ,  G02B6/136 ,  G02F1/025 ,  G02B6/124

CPC classification number: G02B6/122 ,  G02B6/136 ,  G02B6/34 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12107 ,  G02F1/025

Abstract: A semiconductor device including an optical waveguide and a p-type semiconductor portion is configured as follows. The optical waveguide includes: a first semiconductor layer formed on an insulating layer; an insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the insulating layer. The p-type semiconductor portion includes the first semiconductor layer. The film thickness of the p-type semiconductor portion is smaller than that of the optical waveguide. By forming the insulating layer between the first semiconductor layer and the second semiconductor layer, control of the film thicknesses of the optical waveguide and the p-type semiconductor portion is facilitated. Specifically, when the unnecessary second semiconductor layer is removed by etching in a step of forming the p-type semiconductor portion, the insulating layer which is the lower layer functions as an etching stopper, and the film thickness of the p-type semiconductor portion can be easily adjusted.

Abstract translation: 包括光波导和p型半导体部分的半导体器件被配置如下。 光波导包括：形成在绝缘层上的第一半导体层; 形成在所述第一半导体层上的绝缘层; 以及形成在所述绝缘层上的第二半导体层。 p型半导体部分包括第一半导体层。 p型半导体部的膜厚小于光波导的膜厚。 通过在第一半导体层和第二半导体层之间形成绝缘层，便于光波导和p型半导体部分的膜厚的控制。 具体地说，当在形成p型半导体部分的步骤中通过蚀刻除去不必要的第二半导体层时，作为下层的绝缘层用作蚀刻停止层，p型半导体部分的膜厚可以 容易调整。