公开(公告)号：US11502036B2

公开(公告)日：2022-11-15

申请号：US16784960

申请日：2020-02-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hirokazu Sayama ,  Fumihiko Hayashi ,  Junjiro Sakai

IPC: H01L23/535 ,  H01L21/74 ,  H01L21/762 ,  H01L21/764 ,  H01L23/522 ,  H01L21/768

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 μm.

公开(公告)号：US12293925B2

公开(公告)日：2025-05-06

申请号：US17894579

申请日：2022-08-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuki Murayama ,  Makoto Koshimizu ,  Takahiro Mori ,  Junjiro Sakai ,  Satoshi Iida

IPC: H01L21/4757 ,  H01L21/311 ,  H01L21/475 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/532

Abstract: There is formed a semiconductor device including, as the uppermost-layer wiring of the multilayer wiring layer, a plurality of first wirings, a second wiring, a plurality of first dummy wirings, a second dummy wiring, and a passivation film covering these wirings. The passivation film is patterned by etching with a photoresist film used as a mask, the plurality of first wirings and the plurality of first dummy wirings close thereto are densely formed, and the second dummy wiring is formed so as to surround a periphery of the second wiring sparsely formed directly above an analog circuit portion.

公开(公告)号：US11798886B2

公开(公告)日：2023-10-24

申请号：US17938497

申请日：2022-10-06

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hirokazu Sayama ,  Fumihiko Hayashi ,  Junjiro Sakai

IPC: H01L23/535 ,  H01L21/74 ,  H01L21/762 ,  H01L21/764 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/743 ,  H01L21/764 ,  H01L21/76224

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 μm.