公开(公告)号：US20230116260A1

公开(公告)日：2023-04-13

申请号：US17892639

申请日：2022-08-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Nozomi ITO ,  Yorinobu KUNIMUNE ,  Kenichiro ABE ,  Nobuhito SHIRAISHI

IPC: H01C7/06 ,  H01C17/232 ,  H01C17/26 ,  H01L49/02

Abstract: A resistor material including a plurality of crystalline phases having a positive temperature coefficient of resistance, and an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than the crystalline phase, in a mixed state, is provided. Moreover, a resistor element having a resistor film configured by the resistor material described above, and a method of manufacturing a resistor element by forming a film of an amorphous material having a negative temperature coefficient of resistance and subjecting this film to an annealing treatment to obtain the resistor element described above, are provided.

公开(公告)号：US20180240749A1

公开(公告)日：2018-08-23

申请号：US15900878

申请日：2018-02-21

Applicant: Renesas Electronics Corporation

Inventor： Kenichiro ABE

IPC: H01L23/528 ,  H01L29/06 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/7682 ,  H01L21/76895 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/53261 ,  H01L23/53295 ,  H01L29/0649

Abstract: The present invention provides a semiconductor device that reduces the variation of the resistance value of the conductive film. A semiconductor device according to an embodiment includes a semiconductor substrate, a wiring layer, a dielectric film, a metal film, and an interlayer dielectric film. The semiconductor substrate has a first surface. The wiring layer is placed over the first surface. The wiring layer has a first part as well as a second part provided apart from the first part. The dielectric film is placed over the first part. The metal film is placed over the dielectric film. The interlayer dielectric film covers the dielectric film and the metal film, and is located between the first part and the second part. An air gap is provided within the interlayer dielectric film located between the first part and the second part. The air gap extends in a direction crossing the first surface.