公开(公告)号：US20230116260A1

公开(公告)日：2023-04-13

申请号：US17892639

申请日：2022-08-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Nozomi ITO ,  Yorinobu KUNIMUNE ,  Kenichiro ABE ,  Nobuhito SHIRAISHI

IPC: H01C7/06 ,  H01C17/232 ,  H01C17/26 ,  H01L49/02

Abstract: A resistor material including a plurality of crystalline phases having a positive temperature coefficient of resistance, and an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than the crystalline phase, in a mixed state, is provided. Moreover, a resistor element having a resistor film configured by the resistor material described above, and a method of manufacturing a resistor element by forming a film of an amorphous material having a negative temperature coefficient of resistance and subjecting this film to an annealing treatment to obtain the resistor element described above, are provided.

公开(公告)号：US20140312406A1

公开(公告)日：2014-10-23

申请号：US14173074

申请日：2014-02-05

Applicant: Renesas Electronics Corporation

Inventor： Masao INOUE ,  Yoshiki MARUYAMA ,  Akio NISHIDA ,  Yorinobu KUNIMUNE ,  Kota FUNAYAMA

IPC: H01L29/49 ,  H01L29/423 ,  H01L21/28

CPC classification number: H01L29/4925 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/28035 ,  H01L21/28176 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/4916 ,  H01L29/66825

Abstract: To control a grain growth on laminated polysilicon films, a method of manufacturing a semiconductor device is provided. The method includes: forming a first polysilicon film (21) on a substrate (10); forming an interlayer oxide layer (22) on a surface of the first polysilicon film (21); forming a second polysilicon film (23) in contact with the interlayer oxide layer (22) above the first polysilicon film (21); and performing annealing at a temperature higher than a film formation temperature of the first and second polysilicon films in a gas atmosphere containing nitrogen, after formation of the second polysilicon film (23).

Abstract translation: 为了控制层叠多晶硅膜上的晶粒生长，提供了制造半导体器件的方法。 该方法包括：在衬底（10）上形成第一多晶硅膜（21）; 在所述第一多晶硅膜（21）的表面上形成层间氧化物层（22）; 形成与第一多晶硅膜（21）上方的层间氧化物层（22）接触的第二多晶硅膜（23）。 在形成第二多晶硅膜（23）之后，在含氮气体气氛中，在高于第一和第二多晶硅膜的成膜温度的温度下进行退火。

公开(公告)号：US20250046705A1

公开(公告)日：2025-02-06

申请号：US18769072

申请日：2024-07-10

Applicant: Renesas Electronics Corporation

Inventor： Nobuhito SHIRAISHI ,  Yorinobu KUNIMUNE ,  Yoshimi KATO ,  Nozomi ITO ,  Mengnan YANG ,  Kenichiro SONODA

IPC: H01L23/522 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a first dielectric film, a resistor element disposed on the first dielectric film, and a second dielectric film disposed on the resistor element. The resistor element contains silicon, chromium, and carbon. The silicon concentration in the resistor element increases from a center part of the resistor element towards an upper surface of the resistor element, and also increases from the center part of the resistor element towards a lower surface of the resistor element.