-
公开(公告)号：US09258009B2
公开(公告)日：2016-02-09
申请号：US14435940
申请日：2012-10-17
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Kazuaki Deguchi , Masao Ito
Abstract: A successive approximation type AD converter includes: a comparator comparing an analog input signal and a DA-converted comparison code; and a control circuit. When an output of the comparator settles before a limit time period has passed since the comparator started a comparison operation, the control circuit updates the comparison code on the basis of the settled output of the comparator. When the limit time period has passed before the output of the comparator settles, the control circuit updates the comparison code not on the basis of the present output of the comparator.
Abstract translation: 逐次逼近型AD转换器包括：比较模拟输入信号和DA转换的比较码的比较器; 和控制电路。 当比较器开始比较操作之后，比较器的输出在经过极限时间之前已经结束，控制电路根据比较器的稳定输出来更新比较代码。 当在比较器的输出结束之前经过了限制时间段时，控制电路不是基于比较器的当前输出来更新比较代码。
-
公开(公告)号：US20150123207A1
公开(公告)日：2015-05-07
申请号：US14598127
申请日：2015-01-15
Applicant: Renesas Electronics Corporation
Inventor： Kazuaki Deguchi , Yasuo Morimoto , Masao Ito
IPC: H01L27/088
CPC classification number: H01L27/088 , H01L21/823425 , H01L27/0207 , H01L29/7846
Abstract: In a semiconductor device, an active region includes: a first impurity region to which a predetermined voltage is applied; second and third impurity regions forming a pair of conductive electrodes of an insulated gate field effect transistor; and at least one impurity region disposed between the first and second impurity regions. A voltage that causes electrical conduction between the second and third impurity regions is applied to a gate electrode disposed between the second and third impurity regions. All gate electrodes disposed between the first and second impurity regions are configured to be electrically connected to the first impurity region constantly. All impurity regions disposed between the first and second impurity regions are electrically isolated from the first and second impurity regions and maintained in a floating state.
Abstract translation: 在半导体器件中，有源区包括：施加预定电压的第一杂质区; 形成绝缘栅场效应晶体管的一对导电电极的第二和第三杂质区; 以及设置在第一和第二杂质区域之间的至少一个杂质区域。 将引起第二和第三杂质区之间导电的电压施加到设置在第二和第三杂质区之间的栅电极。 设置在第一和第二杂质区域之间的所有栅极电极被配置为恒定地电连接到第一杂质区域。 设置在第一和第二杂质区域之间的所有杂质区域与第一和第二杂质区域电隔离并保持在浮置状态。
-
公开(公告)号：US08773298B2
公开(公告)日：2014-07-08
申请号：US13794308
申请日：2013-03-11
Applicant: Renesas Electronics Corporation
Inventor： Takashi Matsumoto , Masao Ito , Osamu Matsumoto , Hiroto Suzuki
CPC classification number: H03M1/38 , H03M1/0697 , H03M1/46
Abstract: A successive approximation register A/D converter that obtains an output of N bits interrupts operation at a timing when the operation of the successive approximation register A/D converter is affected on the basis of circuit timing in an integrated circuit. The A/D converter performs a comparison between a sampling signal and a comparison reference voltage by a sampling period in which an analog signal is sampled, a comparison period of N states in which the sampled signal is sequentially compared with a comparison voltage for each bit, and a reserve period of M states following the comparison period. When an operation is temporarily interrupted, the A/D converter performs a comparison operation of a bit, whereas the comparison is not performed in the reserve period.
Abstract translation: 在逐次逼近寄存器A / D转换器的操作基于集成电路中的电路定时受到影响的定时，获得N位输出的逐次逼近寄存器A / D转换器中断操作。 A / D转换器将采样信号和比较参考电压进行比较，其中采样模拟信号的采样周期，将采样信号顺序地与每个位的比较电压相比较的N个状态的比较周期 ，以及比较期间M州的储备期。 当操作暂时中断时，A / D转换器执行位的比较操作，而在保留期间不进行比较。
-
公开(公告)号：US09349727B2
公开(公告)日：2016-05-24
申请号：US14598127
申请日：2015-01-15
Applicant: Renesas Electronics Corporation
Inventor： Kazuaki Deguchi , Yasuo Morimoto , Masao Ito
IPC: H01L27/088 , H01L21/8234 , H01L27/02 , H01L29/78
CPC classification number: H01L27/088 , H01L21/823425 , H01L27/0207 , H01L29/7846
Abstract: In a semiconductor device, an active region includes: a first impurity region to which a predetermined voltage is applied; second and third impurity regions forming a pair of conductive electrodes of an insulated gate field effect transistor; and at least one impurity region disposed between the first and second impurity regions. A voltage that causes electrical conduction between the second and third impurity regions is applied to a gate electrode disposed between the second and third impurity regions. All gate electrodes disposed between the first and second impurity regions are configured to be electrically connected to the first impurity region constantly. All impurity regions disposed between the first and second impurity regions are electrically isolated from the first and second impurity regions and maintained in a floating state.
Abstract translation: 在半导体器件中，有源区包括：施加预定电压的第一杂质区; 形成绝缘栅场效应晶体管的一对导电电极的第二和第三杂质区; 以及设置在第一和第二杂质区域之间的至少一个杂质区域。 将引起第二和第三杂质区之间导电的电压施加到设置在第二和第三杂质区之间的栅电极。 设置在第一和第二杂质区域之间的所有栅极电极被配置为恒定地电连接到第一杂质区域。 设置在第一和第二杂质区域之间的所有杂质区域与第一和第二杂质区域电隔离并保持在浮置状态。
-
-
-
Search Results
4
records
(took 0.016 seconds)
