公开(公告)号：US20240006354A1

公开(公告)日：2024-01-04

申请号：US18190460

申请日：2023-03-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shota OKABE ,  Nozomi ITO ,  Yuji TAKAHASHI

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L24/43 ,  H01L2224/03464 ,  H01L2224/48664 ,  H01L2224/0345 ,  H01L2224/05124 ,  H01L2224/05644 ,  H01L2224/04042 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/43826 ,  H01L2224/05147

Abstract: A semiconductor device includes a first metal film forming an uppermost layer wiring that has a bonding pad. A concentration of impurities at a crystal grain boundary of the first metal film is higher than a concentration of impurities in crystal grains in the first metal film. The maximum grain size of crystal grains included in the first metal film is less than 5 μm.