SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20230352382A1

    公开(公告)日:2023-11-02

    申请号:US18170678

    申请日:2023-02-17

    Abstract: A wiring substrate includes a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, a third conductive layer, a third insulating layer, and a fourth conductive layer. Given that an occupancy ratio of a first conductive pattern in the first conductive layer is a first occupancy ratio, an occupancy ratio of a second conductive pattern in the second conductive layer is a second occupancy ratio, an occupancy ratio of a third conductive pattern in the third conductive layer is a third occupancy ratio, and an occupancy ratio of a fourth conductive pattern in the fourth conductive layer is a fourth occupancy ratio, each of the first occupancy ratio and the third occupancy ratio is greater than each of the second occupancy ratio and the fourth occupancy ratio.

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