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公开(公告)号：US20150159265A1
公开(公告)日：2015-06-11
申请号：US14565885
申请日：2014-12-10
发明人： Tae Sung KIM , Chi Sung AHN , Changgu LEE , Hyeongu KIM , Jinhwan LEE , Girish ARABALE
CPC分类号： C23C14/542 , C01B17/20 , C01B19/007 , C01G1/12 , C01G39/06 , C01P2004/24 , C23C14/14 , C23C14/5866
摘要： Provided herein is a metal chalcogenide thin film and a method for preparing the metal chalcogenide thin film, the method including forming a metal layer on a substrate; and forming a metal chalcogenide thin film by inserting the substrate into a chamber for low temperature vapor deposition, injecting a gas containing chalcogen atoms and an argon gas into the chamber, generating a plasma such that chalcogen atoms decomposed by the plasma chemically combine with metal atoms constituting the metal layer to form the metal chalcogenide thin film.
摘要翻译： 本文提供了一种金属硫族化物薄膜和一种制备金属硫族化物薄膜的方法，该方法包括在基底上形成金属层; 并通过将基板插入用于低温气相沉积的室中形成金属硫族化物薄膜，将含有硫属原子和氩气的气体注入到室中，产生等离子体，使得等离子体分解的硫属原子与金属原子化学结合 构成金属层以形成金属硫族化物薄膜。
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公开(公告)号：US20210172065A1
公开(公告)日：2021-06-10
申请号：US17116053
申请日：2020-12-09
发明人： Changgu LEE , Hyonggoo YOO
摘要： A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.
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公开(公告)号：US20180013020A1
公开(公告)日：2018-01-11
申请号：US15544170
申请日：2015-09-30
发明人： Minseok CHOI , Changgu LEE , Hunyoung BARK , Jinhwan LEE
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/0236 , C01B17/42 , C01G33/00 , C01G39/06
CPC分类号： H01L31/022466 , C01B17/42 , C01G33/00 , C01G39/06 , C01P2002/50 , C01P2002/52 , H01L31/0224 , H01L31/022425 , H01L31/0236 , H01L31/0324 , H01L31/0392 , Y02E10/50
摘要： The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a production method therefor. The metal chalcogenide device according to the present invention may comprise: a substrate; an oxide layer positioned on the substrate; a first conductive metal chalcogenide layer positioned on the oxide layer; and first and second electrodes, which are positioned apart from one another on the metal chalcogenide layer and comprise metal chalcogenides.
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公开(公告)号：US20200152477A1
公开(公告)日：2020-05-14
申请号：US16681057
申请日：2019-11-12
发明人： Changgu LEE , Youngchan KIM , Hunyoung BARK
IPC分类号： H01L21/385 , H01L29/24 , H01L21/477
摘要： A method of manufacturing a doped metal chalcogenide thin film includes depositing a dopant atom on a base material; and forming a doped metal chalcogenide thin film on the dopant atom-deposited base material by supplying heat and a reaction gas comprising a metal precursor and a chalcogen precursor to the dopant atom-deposited base material.
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5.发明申请METHOD FOR MANUFACTURING METAL CHALCOGENIDE THIN FILM AND THIN FILM MANUFACTURED THEREBY 审中-公开制造金属氯化铝薄膜和薄膜制造方法公开(公告)号：US20170073809A1
公开(公告)日：2017-03-16
申请号：US15120238
申请日：2015-02-10
发明人： Minseok CHOI , Changgu LEE , Youngchan KIM
CPC分类号： C23C16/305 , C23C14/0021 , C23C14/0623 , C23C14/228 , C23C16/46
摘要： The present invention relates to the manufacturing of a heteroelement thin film, and particularly to a method for manufacturing a metal chalcogenide thin film and the thin film manufactured thereby. The present invention, which relates to a method for manufacturing a metal chalcogenide thin film, may comprise the steps of: supplying a vaporized metal precursor; supplying a chalcogen-containing gas; and forming a thin film by reacting the metal precursor with the chalcogen-containing gas on a growth substrate at a first temperature condition.
摘要翻译： 本发明涉及异质元素薄膜的制造，特别涉及制造金属硫族化物薄膜的方法及其制造的薄膜。 涉及制造金属硫属元素化物薄膜的方法的本发明可以包括以下步骤：提供蒸发的金属前体; 供应含硫属原子气体; 以及通过在第一温度条件下在生长衬底上使金属前体与含硫属原子气体反应而形成薄膜。
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