公开(公告)号：US09281850B1

公开(公告)日：2016-03-08

申请号：US14847542

申请日：2015-09-08

Applicant: RF Micro Devices, Inc.

Inventor： Marcelo J. Franco ,  David C. Dening ,  Robert J. Baeten

IPC: H04B1/26 ,  H04B1/04 ,  H03D7/16

CPC classification number: H04B1/0458 ,  H03D7/161 ,  H03D9/06 ,  H04B1/18

Abstract: The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RF impedance translation circuit.

公开(公告)号：US09160276B1

公开(公告)日：2015-10-13

申请号：US13875797

申请日：2013-05-02

Applicant: RF Micro Devices, Inc.

Inventor： Marcelo J. Franco ,  David C. Dening ,  Robert J. Baeten

IPC: H04B1/26 ,  H03D9/06

CPC classification number: H04B1/0458 ,  H03D7/161 ,  H03D9/06 ,  H04B1/18

Abstract: The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RF impedance translation circuit.

Abstract translation: 本发明涉及一种适应性RF阻抗转换电路，其包括串联在输入和输出之间的第一组感性元件，不包括任何串联开关元件，串联级联的第二组电感元件和一组开关元件 其能够将第一组电感元件电耦合到第二组电感元件。 此外，适应性RF阻抗转换电路包括电耦合在适应性RF阻抗转换电路中的公共参考和至少一个连接节点之间的至少一个可变分流电容电路，其包括选择OFF状态或ON状态的控制电路 与每个开关元件相关联并且选择与每个可变分流电容电路相关联的电容以控制可适应RF阻抗转换电路的阻抗平移特性。

公开(公告)号：US20140146489A1

公开(公告)日：2014-05-29

申请号：US13891809

申请日：2013-05-10

Applicant: RF Micro Devices, Inc.

Inventor： John August Orlowski ,  Donald Joseph Leahy ,  Thomas Scott Morris ,  David C. Dening ,  David Jandzinski

IPC: H05K1/02 ,  H05K3/38

CPC classification number: H05K3/3436 ,  H05K1/111 ,  H05K3/244 ,  H05K3/3452 ,  H05K2201/0338 ,  H05K2201/099 ,  H05K2201/10674 ,  Y02P70/611 ,  Y02P70/613

Abstract: An electronic substrate includes a non-conductive body and one or more conductive features coupled to the non-conductive body. Each of the conductive features includes a base layer. To preserve the performance and conductivity of the one or more conductive features, each of the conductive features includes a protective layer formed over the base layer. The protective layer may include a first layer of silver formed over the base layer and a second layer of palladium formed over the first layer. By depositing the protective layer over the base layer of each of the conductive features, oxidation and exposure of the conductive features is prevented, or at least substantially reduced, since the first layer and the second layer provide a migration barrier for the metal in the base layer. However, the performance and conductivity of the conductive features are maintained due to the low resistivity of silver and palladium.

Abstract translation: 电子基板包括非导电体和耦合到非导电体的一个或多个导电特征。 每个导电特征包括基层。 为了保持一个或多个导电特征的性能和导电性，每个导电特征包括形成在基底层上的保护层。 保护层可以包括在基底层上形成的第一层银，以及形成在第一层上的第二层钯。 通过在每个导电特征的基底层上沉积保护层，防止或至少基本上减少了导电特征的氧化和曝光，因为第一层和第二层为基底中的金属提供迁移屏障 层。 然而，由于银和钯的低电阻率，导电特征的性能和导电性得以保持。