公开(公告)号：US09553550B2

公开(公告)日：2017-01-24

申请号：US13911428

申请日：2013-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Anthony Puliafico ,  David E. Jones ,  Paul D. Jones ,  Chris Levesque ,  William David Southcombe ,  Scott Yoder ,  Terry J. Stockert

IPC: H03F3/19 ,  H03F1/02 ,  H03F3/195 ,  H03F3/21 ,  H03F3/24 ,  H03F3/60 ,  H03F3/68 ,  H03F3/72 ,  H03F3/191 ,  H03F3/193

CPC classification number: H03F3/19 ,  H03F1/0227 ,  H03F1/0261 ,  H03F1/0277 ,  H03F3/191 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F3/602 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/171 ,  H03F2200/222 ,  H03F2200/27 ,  H03F2200/318 ,  H03F2200/336 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/414 ,  H03F2200/417 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2203/21106 ,  H03F2203/21142 ,  H03F2203/21157

Abstract: A radio frequency (RF) switch semiconductor die and an RF supporting structure are disclosed. The RF switch semiconductor die is attached to the RF supporting structure. The RF switch semiconductor die has a first edge and a second edge, which may be opposite from the first edge. The RF supporting structure has a group of alpha supporting structure connection nodes, which is adjacent to the first edge; a group of beta supporting structure connection nodes, which is adjacent to the second edge; and an alpha AC grounding supporting structure connection node, which is adjacent to the second edge. When the group of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the group of beta supporting structure connection nodes are inactive.

Abstract translation: 公开了射频（RF）开关半导体管芯和RF支撑结构。 RF开关半导体管芯附接到RF支撑结构。 RF开关半导体管芯具有可以与第一边缘相反的第一边缘和第二边缘。 RF支持结构具有一组与第一边缘相邻的α支撑结构连接节点; 一组与第二边缘相邻的β支撑结构连接节点; 以及与第二边缘相邻的αAC接地支撑结构连接节点。 当α支持结构连接节点和α交流接地支持结构连接节点组成活动时，β支持结构连接节点组无效。

公开(公告)号：US20130271224A1

公开(公告)日：2013-10-17

申请号：US13911428

申请日：2013-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Anthony Puliafico ,  David E. Jones ,  Paul D. Jones ,  Chris Levesque ,  William David Southcombe ,  Scott Yoder ,  Terry J. Stockert

IPC: H03F3/19

CPC classification number: H03F3/19 ,  H03F1/0227 ,  H03F1/0261 ,  H03F1/0277 ,  H03F3/191 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F3/602 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/171 ,  H03F2200/222 ,  H03F2200/27 ,  H03F2200/318 ,  H03F2200/336 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/414 ,  H03F2200/417 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2203/21106 ,  H03F2203/21142 ,  H03F2203/21157

Abstract: A radio frequency (RF) switch semiconductor die and an RF supporting structure are disclosed. The RF switch semiconductor die is attached to the RF supporting structure. The RF switch semiconductor die has a first edge and a second edge, which may be opposite from the first edge. The RF supporting structure has a group of alpha supporting structure connection nodes, which is adjacent to the first edge; a group of beta supporting structure connection nodes, which is adjacent to the second edge; and an alpha AC grounding supporting structure connection node, which is adjacent to the second edge. When the group of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the group of beta supporting structure connection nodes are inactive.

Abstract translation: 公开了射频（RF）开关半导体管芯和RF支撑结构。 RF开关半导体管芯附接到RF支撑结构。 RF开关半导体管芯具有可以与第一边缘相反的第一边缘和第二边缘。 RF支持结构具有一组与第一边缘相邻的α支撑结构连接节点; 一组与第二边缘相邻的β支撑结构连接节点; 以及与第二边缘相邻的αAC接地支撑结构连接节点。 当α支持结构连接节点和α交流接地支持结构连接节点组成活动时，β支持结构连接节点组无效。