摘要:
Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要:
A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.
摘要:
Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 Å/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.
摘要:
A cable that provides reduced alien crosstalk between similar twisted pairs in cables that are in close proximity to one another and/or crosstalk between twisted pairs of the cable. In one example, a cable includes a first twisted pair of insulated conductors, a second twisted pair of insulated conductors, a shaped separator positioned so as to separate the first twisted pair from the second twisted pair, and a jacket disposed about the first and second twisted pairs and the separator, wherein the shaped separator comprises a central arm and at least one enlarged portion disposed at a first end of the central arm.