公开(公告)号：US10509078B2

公开(公告)日：2019-12-17

申请号：US14926853

申请日：2015-10-29

Applicant: ROLLS-ROYCE PLC

Inventor： Sivakumar Nadarajan ,  Shantha Dharmasiri Gamini Jayasinghe ,  Amit Kumar Gupta ,  Chandana Jayampathi Gajanayake ,  Viswanathan Vaiyapuri

IPC: G01R31/40

Abstract: A method of assessing a condition of a multi-phase power system comprises the steps of: acquiring a voltage signal and a current signal for each phase of the multi-phase power system; calculating a product of the voltage signal for each phase of the multi-phase power system with one of the current signals such that the product is between a voltage signal for one phase and a current signal for a different phase for at least two of the products; summing the calculated products; and identifying the possible existence of a fault in the multi-phase power system based on a frequency analysis of the summed calculated products.

公开(公告)号：US09964600B2

公开(公告)日：2018-05-08

申请号：US14991139

申请日：2016-01-08

Applicant: ROLLS-ROYCE plc

Inventor： Chandana Jayampathi Gajanayake ,  Shantha Dharmasiri Gamini Jayasinghe ,  Sivakumar Nadarajan ,  Amit Kumar Gupta

IPC: G01R31/02 ,  G01R31/42

CPC classification number: G01R31/42

Abstract: A method of open-switch fault detection in a two-level voltage source power converter comprises the steps of: i. acquiring the waveforms of three-phase alternating current of the two-level voltage source power converter; ii. calculating at least a first time derivative of each acquired waveform; and iii. using the at least first time derivatives to determine whether an open-switch fault is present in the two-level voltage source power converter.

公开(公告)号：US10605854B2

公开(公告)日：2020-03-31

申请号：US15596878

申请日：2017-05-16

Applicant: ROLLS-ROYCE plc

Inventor： Mohamed Halick Mohamed Sathik ,  Chandana Jayamapathi Gajanayake ,  Shantha Dharmasiri Gamini Jayasinghe ,  Amit Kumar Gupta ,  Rejeki Simanjorang

IPC: G01R31/26 ,  G01R31/327 ,  H02M3/158 ,  H02M7/217 ,  H02M7/537 ,  G01R31/40

Abstract: A method of monitoring the health of a semiconductor power electronic switch such as an insulated gate bipolar transistor (IGBT) is provided. The method having the steps of: measuring one or more parameters selected from the group consisting of: a rate of change of voltage ( dV dt ) across the switch; a rate of change of current ( di dt ) through the switch, a charge present on a gate of the switch (QG), a peak overshoot voltage (VPO) across the switch, and a peak overshoot or reverse recovery current (IRR) through the switch; and estimating the health of the switch based on the measured parameter(s).