摘要:
A method of identifying and communicating the existence of Intermittent nodes in a communication network with a mixed TDMA/CSMA-CD MAC frame format, and of preventing these nodes from unnecessarily debasing existing voice channel connections. Information pertaining to intermittent nodes is included in a database for an extended operational duration and used as primary information in control of the creation of any newly requested voice channels. Intermittent nodes are treated for the purpose of assigning voice channels as existing permanent nodes, whether currently visible or not. Newly revealed intermittent nodes are added to the database through intermediate nodes. This invention increases reliability and quality of voice communications during noise/impedance level changes of the network that may render one or more nodes not visible.
摘要:
A new communication distribution platform for a customer premise creates a new paradigm where components from the physical layer are shared, components from the MAC layer are shared, and a common network layer is used. A single modulation unified system and shared MAC is used across multiple media. Varied implementations may chose to share only physical layer components, or MAC layer components, or both. One implementation disclosed is the use of a common physical layer modulation combined with a MAC layer with many common functions in support of delivery of IP based services within the premises. This combination optimizes customer experience, flexibility in use, provides simpler maintenance, and simpler reduced inventory requirements and operations support for service suppliers. It can be used to support either a circuit switched environment or packet switched environment.
摘要:
A method and apparatus improves transmission quality of transmission media in a punctuated noise environment by terminating transmission during duration of punctuated large noise changes and alters network parameters, of the transmission media, to accommodate changes in level of stable noise conditions between punctuated large noise changes. Each stable noise level encountered is measured and its characteristics (i.e., level) is stored in a data base and associated network parameters (i.e., bit rates, bandwidth etc.) are changed accordingly and used to control or maintain quality of the transmission media.
摘要:
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
摘要:
Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active region of sufficient width to enable high optical coupling efficiency and a low dark count rate. Some APDs fabricated using these methods have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is substantially minimized and further wherein the device region maintains a substantially uniform gain and breakdown voltage.
摘要:
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
摘要:
The present invention is directed to a semiconductor waveguiding structure which includes a) a first semiconductor waveguiding layer formed on a substrate, b) a barrier layer that is formed on the first semiconductor waveguiding layer, and that is resistant to a selected etchant, and c) a second semiconductor waveguiding layer that is etched using the selected etchant such that its width is tapered along its length to a pointed edge. A separate etching of the first semiconductor layer is performed to form each sidewall of the first semiconductor layer. The intersection of those sidewalls defines the pointed edge which has a radius of curvature of less than 500 Angstroms.
摘要:
A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the size of the diffusion windows in the diffusion mask and the proximity of the diffusion windows to a dopant sink. In some embodiments, the diffusion process is conducted in an epi-reactor.
摘要:
A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.
摘要:
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.