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1.发明申请Integrated acoustic bandgap devices for energy confinement and methods of fabricating same 有权用于能量限制的集成声带隙装置及其制造方法公开(公告)号：US20090152983A1
公开(公告)日：2009-06-18
申请号：US12002524
申请日：2007-12-17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
摘要翻译： 本发明涉及包含特别适用于定时应用的振荡器元件的单片集成电路。 振荡器元件包括具有设置在一对电极之间的压电材料的谐振元件。 振荡器元件还包括可以设置在谐振器元件的任一侧的声学限制结构。 声学限制元件包括交替的低和高声阻抗材料组。 温度补偿层可以设置在压电材料和至少一个电极之间。 振荡器元件通过互连与集成电路元件单片集成。 振荡器元件和集成电路元件可以顺序地或同时地制造。
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2.发明授权公开(公告)号：US08564174B2
公开(公告)日：2013-10-22
申请号：US13339505
申请日：2011-12-29
IPC分类号： H03H9/17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
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3.发明授权Integrated acoustic bandgap devices for energy confinement and methods of fabricating same 有权用于能量限制的集成声带隙装置及其制造方法公开(公告)号：US08089195B2
公开(公告)日：2012-01-03
申请号：US12002524
申请日：2007-12-17
IPC分类号： H03H9/17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
摘要翻译： 本发明涉及包含特别适用于定时应用的振荡器元件的单片集成电路。 振荡器元件包括具有设置在一对电极之间的压电材料的谐振元件。 振荡器元件还包括可以设置在谐振器元件的任一侧的声学限制结构。 声学限制元件包括交替的低和高声阻抗材料组。 温度补偿层可以设置在压电材料和至少一个电极之间。 振荡器元件通过互连与集成电路元件单片集成。 振荡器元件和集成电路元件可以顺序地或同时地制造。
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4.发明申请INTEGRATED ACOUSTIC BANDGAP DEVICES FOR ENERGY CONFINEMENT AND METHODS OF FABRICATING SAME 有权用于能量约束的集成声学带状装置及其制造方法公开(公告)号：US20120098611A1
公开(公告)日：2012-04-26
申请号：US13339505
申请日：2011-12-29
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
摘要翻译： 本发明涉及包含特别适用于定时应用的振荡器元件的单片集成电路。 振荡器元件包括具有设置在一对电极之间的压电材料的谐振元件。 振荡器元件还包括可以设置在谐振器元件的任一侧的声学限制结构。 声学限制元件包括交替的低和高声阻抗材料组。 温度补偿层可以设置在压电材料和至少一个电极之间。 振荡器元件通过互连与集成电路元件单片集成。 振荡器元件和集成电路元件可以顺序地或同时地制造。
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公开(公告)号：US20130300259A1
公开(公告)日：2013-11-14
申请号：US13941619
申请日：2013-07-15
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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公开(公告)号：US08487511B2
公开(公告)日：2013-07-16
申请号：US13549676
申请日：2012-07-16
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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公开(公告)号：US20120013224A1
公开(公告)日：2012-01-19
申请号：US13246304
申请日：2011-09-27
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
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公开(公告)号：US20120274183A1
公开(公告)日：2012-11-01
申请号：US13549676
申请日：2012-07-16
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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公开(公告)号：US08222795B2
公开(公告)日：2012-07-17
申请号：US13246304
申请日：2011-09-27
IPC分类号： H01L41/09
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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公开(公告)号：US08030823B2
公开(公告)日：2011-10-04
申请号：US12321860
申请日：2009-01-26
IPC分类号： H01L41/08
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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