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公开(公告)号：US07670203B2
公开(公告)日：2010-03-02
申请号：US11649197
申请日：2007-01-03
CPC分类号： H01J23/165 , H01J9/02 , H01J9/022 , H01J21/105 , H01J25/00 , H01J2209/18
摘要： A method of making a microelectromechanical microwave vacuum tube device is disclosed. The device is formed by defining structural regions and sacrificial regions in a substrate. The structural regions have flexural members. The substrate is treated to remove the sacrificial regions and release the structural regions such that the structural regions are moveable by the flexural members. The structural regions include a device cathode, a device grid or both a device cathode and a device grid. The cathode comprises electron emitters. The device further includes an output structure where amplified microwave power is removed from the device. In the method, the cathode surface and the grid surface are moved to a position where they are substantially parallel to each other and substantially perpendicular to the substrate. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.
摘要翻译： 公开了一种制造微机电微波真空管装置的方法。 该器件通过在衬底中限定结构区域和牺牲区域而形成。 结构区域具有弯曲构件。 处理衬底以去除牺牲区域并释放结构区域，使得结构区域可被弯曲构件移动。 结构区域包括器件阴极，器件栅格或器件阴极和器件栅格。 阴极包括电子发射体。 该装置还包括其中放大的微波功率从该装置移除的输出结构。 在该方法中，阴极表面和栅格表面移动到它们基本上彼此平行并且基本上垂直于衬底的位置。 该装置还包括基本上平行于阴极表面和栅格表面的阳极。
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2.发明申请Integrated acoustic bandgap devices for energy confinement and methods of fabricating same 有权用于能量限制的集成声带隙装置及其制造方法公开(公告)号：US20090152983A1
公开(公告)日：2009-06-18
申请号：US12002524
申请日：2007-12-17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
摘要翻译： 本发明涉及包含特别适用于定时应用的振荡器元件的单片集成电路。 振荡器元件包括具有设置在一对电极之间的压电材料的谐振元件。 振荡器元件还包括可以设置在谐振器元件的任一侧的声学限制结构。 声学限制元件包括交替的低和高声阻抗材料组。 温度补偿层可以设置在压电材料和至少一个电极之间。 振荡器元件通过互连与集成电路元件单片集成。 振荡器元件和集成电路元件可以顺序地或同时地制造。
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公开(公告)号：US06657517B2
公开(公告)日：2003-12-02
申请号：US10028191
申请日：2001-12-20
IPC分类号： H03H9205
CPC分类号： H03H3/04 , H03H2003/0428 , Y10T29/42
摘要： Differing metallic electrodes having the same or differing thickness are formed at different locations on a support structure and/or on a single thickness film of piezoelectric material in order to form a multiple frequency resonator device having greatly separated acoustic resonance frequencies. A plurality of multiple frequency resonators can be combined to form a blank of frequency selective devices in order to handle the many different RF bands, at widely varying frequencies, that wireless communication technologies demand today.
摘要翻译： 形成具有相同或不同厚度的不同金属电极在支撑结构上的不同位置和/或压电材料的单个厚度膜上形成，以形成具有极大分离的声共振频率的多频谐振器装置。 多个多频谐振器可以被组合以形成频率选择装置的空白，以便处理无线通信技术今天需要的广泛变化的频率的许多不同RF频带。
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公开(公告)号：US06420202B1
公开(公告)日：2002-07-16
申请号：US09571919
申请日：2000-05-16
IPC分类号： H01L2100
摘要： A process for configuring a thin film resonator to advantageously shape a desired acoustic mode of the resonator such that the electrical and acoustic performance of the resonator is enhanced. As a result of the contouring or shaping, a minimum amount of acoustic energy occurs near the edge of the resonator, from which energy may leak or at which undesired waves may be created by a desired mode. The process is used during batch-fabrication of thin-film resonators which are used in high frequency RF filtering or frequency control applications. Utilizing photolithography, the shaping can be achieved in a manner derived from the known methods used to manufacture lens arrays. Using the process, the lateral motion of acoustic waves within the resonator may be controlled and the acoustic energy of the sound wave positioned at a desired location within the resonator.
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5.发明授权公开(公告)号：US06305226B1
公开(公告)日：2001-10-23
申请号：US09385745
申请日：1999-08-30
IPC分类号： G01N2900
CPC分类号： G01N29/06 , Y10S977/837 , Y10S977/849 , Y10S977/85 , Y10S977/852 , Y10S977/865
摘要： This invention relates to a method and apparatus for imaging acoustic fields in high-frequency acoustic resonators. More particularly, the invention is directed to a scanning RF mode microscope system that detects and monitors vibration of high frequency resonators that vibrate in the frequency range of approximately 1 MHz to 20 GHz. The system then maps with sub-Angstrom resolution vibration modes of such devices and obtains quantitative measurements of the piezoelectric properties of the materials.
摘要翻译： 本发明涉及用于对高频声谐振器中的声场进行成像的方法和装置。 更具体地，本发明涉及一种扫描RF模式显微镜系统，其检测和监测在大约1MHz至20GHz的频率范围内振动的高频谐振器的振动。 然后系统用这种器件的亚分辨率振动模式映射，并获得材料的压电特性的定量测量。
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公开(公告)号：US06212056B1
公开(公告)日：2001-04-03
申请号：US09280804
申请日：1999-03-26
IPC分类号： H01G500
摘要： First and second wafers are micromachined by standard integrated-circuit fabrication techniques to respectively make first and second component parts of a variable capacitor. A thin flexible membrane in the first wafer is integral with and mechanically supported by the first wafer. A metal pattern on the first wafer includes a first capacitor plate on the membrane. In the second wafer, a well is formed. A metal pattern on the second wafer includes a second capacitor plate in the well. By bonding the two parts together face-to-face, the capacitor plates are positioned in spaced-apart alignment with each other. External electrical connections to the plates are made via bonding-pad portions of the metal patterns on the wafers. In response to electrical control signals, the metal plate on the membrane can be moved toward the other plate, thereby selectively changing the capacitance of the assembly.
摘要翻译： 第一和第二晶片通过标准集成电路制造技术进行微加工，以分别制造可变电容器的第一和第二组成部分。 第一晶片中的薄柔性膜与第一晶片成一体并由其机械支撑。 第一晶片上的金属图案包括膜上的第一电容器板。 在第二晶片中形成一个阱。 第二晶片上的金属图案包括井中的第二电容器板。 通过将两个部件面对面地结合在一起，电容器板彼此间隔开对准地定位。 通过晶片上的金属图案的焊盘部分进行到板的外部电连接。 响应于电气控制信号，膜上的金属板可以朝向另一个板移动，从而选择性地改变组件的电容。
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7.发明授权公开(公告)号：US08564174B2
公开(公告)日：2013-10-22
申请号：US13339505
申请日：2011-12-29
IPC分类号： H03H9/17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
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8.发明授权Integrated acoustic bandgap devices for energy confinement and methods of fabricating same 有权用于能量限制的集成声带隙装置及其制造方法公开(公告)号：US08089195B2
公开(公告)日：2012-01-03
申请号：US12002524
申请日：2007-12-17
IPC分类号： H03H9/17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
摘要翻译： 本发明涉及包含特别适用于定时应用的振荡器元件的单片集成电路。 振荡器元件包括具有设置在一对电极之间的压电材料的谐振元件。 振荡器元件还包括可以设置在谐振器元件的任一侧的声学限制结构。 声学限制元件包括交替的低和高声阻抗材料组。 温度补偿层可以设置在压电材料和至少一个电极之间。 振荡器元件通过互连与集成电路元件单片集成。 振荡器元件和集成电路元件可以顺序地或同时地制造。
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9.发明授权Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom 有权用于确定和/或改善薄膜谐振器装置中的高功率可靠性的方法和装置，以及由此产生的薄膜谐振器装置公开(公告)号：US06674291B1
公开(公告)日：2004-01-06
申请号：US09669681
申请日：2000-09-26
IPC分类号： G01R2702
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device. The TFR device with the modified electrode structure can operate at higher power levels and has a longer operational lifetime than what is currently available.
摘要翻译： 已经显示电迁移的影响导致仅在几个小时内对诸如薄膜谐振器（TFR）器件的电子器件的金属电极的损坏，用于在这些器件的工作范围内的测试输入功率。 已经确定这种故障对输入功率的频率敏感。 本发明提供一种用于确定电子设备中的高功率可靠性的方法和装置，以便能够准确地确定电子设备的故障时间，并因此能够预测寿命。 作为用于测试设备的方法的一部分，该确定与施加到电子设备的输入功率的频率无关。 基于上述结果，已经开发了一种TFR器件，其包括保护或电迁移减少层，例如钛沉积在器件的电极上。 具有改进的电极结构的TFR器件可以在更高的功率水平下工作，并且具有比目前可用的更长的工作寿命。
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10.发明授权Method and apparatus for studying vibrational modes of an electro-acoustic device 失效用于研究电声装置的振动模式的方法和装置公开(公告)号：US06587212B1
公开(公告)日：2003-07-01
申请号：US09702713
申请日：2000-10-31
IPC分类号： G01B902
CPC分类号： G01B11/00
摘要： A method for studying vibrational modes of an electro-acoustic device includes driving the electro-acoustic device to produce at least one vibrational mode therein, collecting phase and amplitude data from the electro-acoustic device using optical interferometry, and mapping the at least one vibrational mode based upon the collected phase and amplitude data. The phase and amplitude data may be processed to provide an instantaneous three-dimensional view of the at least one vibrational mode. Furthermore, a sequence of instantaneous three-dimensional views may be constructed to form a motion picture of the at least one vibrational mode. Additionally, collecting may include raster scanning to provide phase and amplitude data across a surface of the electro-acoustic device.
摘要翻译： 一种用于研究电声装置的振动模式的方法包括驱动电声装置以在其中产生至少一个振动模式，使用光学干涉测量从电声装置收集相位和振幅数据，并将至少一个振动 模式基于收集的相位和振幅数据。 可以处理相位和振幅数据以提供至少一个振动模式的瞬时三维视图。 此外，可以构造一系列瞬时三维视图以形成至少一个振动模式的运动图像。 另外，收集可以包括光栅扫描以提供横跨电声装置的表面的相位和幅度数据。
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