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1.发明申请GUIDED-WAVE PHOTODETECTOR APPARATUS EMPLOYING MID-BANDGAP STATES OF SEMICONDUCTOR MATERIALS, AND FABRICATION METHODS FOR SAME 审中-公开使用半导体材料的中间带状态的引导波长光电装置及其制造方法公开(公告)号：US20170062636A1
公开(公告)日：2017-03-02
申请号：US15250594
申请日：2016-08-29
IPC分类号： H01L31/0392 , H01L31/112 , H01L31/18 , H01L31/0224 , H01L31/02 , H01L31/028 , H01L31/0232
CPC分类号： H01L31/02327 , H01L27/1443 , H01L31/035281 , H01L31/03682 , H01L31/103 , Y02E10/546
摘要： Guided-wave photodetectors based on absorption of infrared photons by mid-bandgap states in non-crystal semiconductors. In one example, a resonant guided-wave photodetector is fabricated based on a polysilicon layer used for the transistor gate in a SOI CMOS process without any change to the foundry process flow (‘zero-change’ CMOS). Mid-bandgap defect states in the polysilicon absorb infrared photons. Through a combination of doping mask layers, a lateral p-n junction is formed in the polysilicon, and a bias voltage applied across the junction creates a sufficiently strong electric field to enable efficient photo-generated carrier extraction and high-speed operation. An example device has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.
摘要翻译： 基于在非晶体半导体中通过中带隙状态吸收红外光子的导波光电探测器。 在一个示例中，基于用于SOI CMOS工艺中的晶体管栅极的多晶硅层制造谐振导波光电检测器，而不会改变铸造工艺流程（“零变换”CMOS）。 多晶硅中的带隙缺陷状态吸收红外光子。 通过掺杂掩模层的组合，在多晶硅中形成横向p-n结，并且跨接点施加的偏置电压产生足够强的电场，以实现有效的光生载流子提取和高速操作。 一个示例性器件的响应度从1300到1600nm的响应度大于0.14A / W，10GHz的带宽和在15V反向偏压下的80nA暗电流。
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