公开(公告)号：US20090323899A1

公开(公告)日：2009-12-31

申请号：US12067181

申请日：2006-09-11

申请人： Ralf Dorscheid ,  Gereon Vogtmeier ,  Roger Steadman ,  Roy K. Groom ,  Avner Elgaly

发明人： Ralf Dorscheid ,  Gereon Vogtmeier ,  Roger Steadman ,  Roy K. Groom ,  Avner Elgaly

IPC分类号： G21K1/02 ,  A61B6/06

CPC分类号： G21K1/025 ,  A61B6/032 ,  A61B6/037 ,  A61B6/06 ,  A61B6/4258 ,  A61B6/4291

摘要： A Grid (1) for selective absorption of electromagnetic radiation (2, 3), as used e.g. in CT or NM imaging, comprises a block of a rigid foam material (4), where the foam material is essentially transparent to the electromagnetic radiation (2, 3), a first set of radiation absorbing lamellae (5), and a second set of radiation absorbing lamellae (6), the first and the second set of lamellae are arranged in the block of foam material so that a radiation transmission direction (T) is defined, the first set of lamellae and the second set of lamellae being arranged on top of each other with respect to the transmission direction (T). Such a grid arrangement is rigid due to the use of a carrier material, can be manufactured precisely and, furthermore, two-dimensional grids can be manufactured without the need to physically intersect the lamellae.

摘要翻译： 用于选择性吸收电磁辐射（2,3）的格栅（1） 在CT或NM成像中包括刚性泡沫材料块（4），其中泡沫材料对电磁辐射（2,3）基本上是透明的，第一组辐射吸收薄片（5）和第二组 的辐射吸收薄片（6），第一和第二组薄片布置在泡沫材料块中，从而定义辐射透射方向（T），第一组薄片和第二组薄片布置在 相对于传输方向（T）彼此相邻。 由于使用载体材料，这种格栅布置是刚性的，因此可以精确地制造，此外，可以制造二维格栅，而不需要物理地与薄片相交。

公开(公告)号：US07525097B2

公开(公告)日：2009-04-28

申请号：US10599422

申请日：2005-03-22

申请人： Ralf Dorscheid ,  Gereon Vogtmeier ,  Roger Steadman

发明人： Ralf Dorscheid ,  Gereon Vogtmeier ,  Roger Steadman

IPC分类号： H01L27/146

CPC分类号： G01T1/2018 ,  A61B6/032 ,  A61B6/4233 ,  A61B6/4291 ,  A61B6/4411

摘要： The invention relates to a device for the detection and/or transmission of radiation, particularly an X-ray detector 1, that consists of a carrier 10 on which an array of detector modules 20 is arranged. The carrier 10 comprises holes 11 through which a ball at the backside of the detector modules 20 can be inserted in order to fix the modules such that they can still rotate to a certain degree. Due to this freedom, the sensor modules 20 can align themselves during assembly.

摘要翻译： 本发明涉及一种用于检测和/或传输辐射的装置，特别是一种X射线检测器1，其由载体10组成，其上布置有检测器模块阵列20。 载体10包括孔11，通过该孔11可以插入检测器模块20的后侧的球，以便固定模块，使得它们仍然可以一定程度地旋转。 由于这种自由度，传感器模块20可以在组装期间自己对准。

公开(公告)号：US20080230706A1

公开(公告)日：2008-09-25

申请号：US10599422

申请日：2005-03-22

申请人： Ralf Dorscheid ,  Gereon Vogtmeier ,  Roger Steadman

发明人： Ralf Dorscheid ,  Gereon Vogtmeier ,  Roger Steadman

IPC分类号： G01T1/166 ,  G01T1/24 ,  A61B6/00

CPC分类号： G01T1/2018 ,  A61B6/032 ,  A61B6/4233 ,  A61B6/4291 ,  A61B6/4411

摘要： The invention relates to a device for the detection and/or transmission of radiation, particularly an X-ray detector 1, that consists of a carrier 10 on which an array of detector modules 20 is arranged. The carrier 10 comprises holes 11 through which a ball at the backside of the detector modules 20 can be inserted in order to fix the modules such that they can still rotate to a certain degree. Due to this freedom, the sensor modules 20 can align themselves during assembly.

摘要翻译： 本发明涉及一种用于检测和/或传输辐射的装置，特别是一种X射线检测器1，其由载体10组成，其上布置有检测器模块阵列20。 载体10包括孔11，通过该孔11可以插入检测器模块20的后侧的球，以便固定模块，使得它们仍然可以一定程度地旋转。 由于这种自由度，传感器模块20可以在组装期间自己对准。

公开(公告)号：US08357944B2

公开(公告)日：2013-01-22

申请号：US12063382

申请日：2006-08-10

申请人： Christian Drabe ,  Alexander Wolter ,  Roger Steadman ,  Andreas Bergmann ,  Gereon Vogtmeier ,  Ralf Dorscheid

发明人： Christian Drabe ,  Alexander Wolter ,  Roger Steadman ,  Andreas Bergmann ,  Gereon Vogtmeier ,  Ralf Dorscheid

IPC分类号： H01L29/18

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L31/02005 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

摘要： The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.

摘要翻译： 本发明涉及半导体衬底及其制造方法。 在这方面，本发明的目的是提供可以更经济有效地制造并且可以实现高排列密度以及良好导电性和封闭表面的半导体衬底。 根据本发明，导电连接从其前侧通过基板被引导到后侧。 导电连接从外部完全包围。 绝缘体由填充有材料的开口形成。 内壁设置有电介质涂层和/或填充有电绝缘或导电材料。 导电连接形成有另外的开口，其填充有导电材料并且布置在绝缘体的内部。 开口形成有与前侧正交对准或者在后侧方向连续地逐渐变细的无梯度内壁。

公开(公告)号：US20100295066A1

公开(公告)日：2010-11-25

申请号：US12063382

申请日：2006-08-10

申请人： Christian Drabe ,  Alexander Wolter ,  Roger Steadman ,  Andreas Bergmann ,  Gereon Vogtmeier ,  Ralf Dorscheid

发明人： Christian Drabe ,  Alexander Wolter ,  Roger Steadman ,  Andreas Bergmann ,  Gereon Vogtmeier ,  Ralf Dorscheid

IPC分类号： H01L23/48 ,  H01L21/70 ,  H01L31/02 ,  H01L33/00 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L31/02005 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

摘要： The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.

摘要翻译： 本发明涉及半导体衬底及其制造方法。 在这方面，本发明的目的是提供可以更经济有效地制造并且可以实现高排列密度以及良好导电性和封闭表面的半导体衬底。 根据本发明，导电连接从其前侧通过基板被引导到后侧。 导电连接从外部完全包围。 绝缘体由填充有材料的开口形成。 内壁设置有电介质涂层和/或填充有电绝缘或导电材料。 导电连接形成有另外的开口，其填充有导电材料并且布置在绝缘体的内部。 开口形成有与前侧正交对准或者在后侧方向连续地逐渐变细的无梯度内壁。

公开(公告)号：US08633572B2

公开(公告)日：2014-01-21

申请号：US12293101

申请日：2007-03-16

申请人： Gereon Vogtmeier ,  Roger Steadman ,  Ralf Dorscheid ,  Jeroen Jonkers

发明人： Gereon Vogtmeier ,  Roger Steadman ,  Ralf Dorscheid ,  Jeroen Jonkers

IPC分类号： H01L29/40

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/131 ,  H01L2924/014

摘要： It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.

摘要翻译： 描述了形成在半导体衬底（600）上的电子芯片的低欧姆通晶片互连（TWI）。 TWI包括在基板（600）的前表面和后表面之间延伸的第一连接。 第一连接（610）包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接（615）。 第二连接（615）通过半导体衬底（600）的至少一部分在空间上与第一连接（610）分离。 前表面设置有集成电路装置（620），其中第一连接（610）电耦合到集成电路装置（620）的至少一个节点而不穿透集成电路装置（620）。 在处理TWI期间，通孔可以首先用非金属材料填充，例如， 多晶硅。 在前表面顶部形成集成组件（620）之后，可以使衬底（600）变薄并且非金属材料可以被低欧姆材料代替，这是特别是金属材料。

公开(公告)号：US20090079021A1

公开(公告)日：2009-03-26

申请号：US12293101

申请日：2007-03-16

申请人： Gereon Vogtmeier ,  Roger Steadman ,  Ralf Dorscheid ,  Jeroen Jonkers

发明人： Gereon Vogtmeier ,  Roger Steadman ,  Ralf Dorscheid ,  Jeroen Jonkers

IPC分类号： H01L31/02 ,  H01L23/48 ,  H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/131 ,  H01L2924/014

摘要： It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.

摘要翻译： 描述了形成在半导体衬底（600）上的电子芯片的低欧姆通晶片互连（TWI）。 TWI包括在基板（600）的前表面和后表面之间延伸的第一连接。 第一连接（610）包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接（615）。 第二连接（615）通过半导体衬底（600）的至少一部分在空间上与第一连接（610）分离。 前表面设置有集成电路装置（620），其中第一连接（610）电耦合到集成电路装置（620）的至少一个节点而不穿透集成电路装置（620）。 在处理TWI期间，通孔可以首先用非金属材料填充，例如， 多晶硅。 在前表面顶部形成集成组件（620）之后，可以使衬底（600）变薄并且非金属材料可以被低欧姆材料代替，这是特别是金属材料。

公开(公告)号：US20110122999A1

公开(公告)日：2011-05-26

申请号：US13055512

申请日：2009-08-06

申请人： Gereon Vogtmeier ,  Ralf Dorscheid

发明人： Gereon Vogtmeier ,  Ralf Dorscheid

IPC分类号： G21K1/10 ,  C08J7/18

CPC分类号： G21K1/025 ,  B22F3/114 ,  B22F7/002 ,  B22F2998/10 ,  B33Y70/00 ,  B33Y80/00 ,  Y02P10/295 ,  B22F3/1055

摘要： A grid (1) for selective transmission of electromagnetic radiation and a method for manufacturing such grid is proposed. Therein, the grid (1) comprises a structural element with walls (3) comprising a plurality of particles (19) of a radiation-absorbing material wherein the particles (19) are sintered together such that pores (21) are present between neighbouring particles (19). The pores (21) are at least partially filled with a second solid material. The filling of the pores (21) can be done by inserting the second material in a liquid, preferably molten form into the pores. The second material can be itself radiation-absorbing as well and may help to both, increase the mechanical stability of the grid and to enhance the radiation-absorbing properties.

摘要翻译： 提出了用于电磁辐射选择性传输的电网（1）及其制造方法。 其中，网格（1）包括具有壁（3）的结构元件，所述壁（3）包括多个辐射吸收材料的颗粒（19），其中所述颗粒（19）被烧结在一起，使得孔（21）存在于相邻颗粒 （19）。 孔（21）至少部分地填充有第二固体材料。 孔（21）的填充可以通过将第二材料以液体，优选熔融形式插入孔中来完成。 第二种材料本身也可以是吸收辐射的，并且可以帮助两者，增加电网的机械稳定性并增强辐射吸收性能。

公开(公告)号：US20080093559A1

公开(公告)日：2008-04-24

申请号：US11573357

申请日：2005-08-08

申请人： Ralf Dorscheid ,  Gereon Vogtmeier

发明人： Ralf Dorscheid ,  Gereon Vogtmeier

IPC分类号： G01T1/20 ,  B32B38/04 ,  B29D11/00

CPC分类号： G01T1/1644 ,  G01T1/1648 ,  Y10T156/1062

摘要： The invention relates to the production of a scintillator system which comprises an Anti-Scatter-Grid (20) and an arrangement of scintillator cells. In a first processing step, a rectangular pattern of slots (11, 12) is cut into the top surface of a scintillator crystal (10). An Anti-Scatter-Grid (20) is then inserted with one end into said slots and fixed there with a glue. Finally, the top layer (thickness d) is separated from the scintillator crystal (10) yielding the desired scintillator system.

摘要翻译： 本发明涉及闪烁体系统的制造，其包括防散射格（20）和闪烁体单元的布置。 在第一处理步骤中，将狭缝（11,12）的矩形图案切割到闪烁体晶体（10）的顶表面。 然后将防散射网格（20）一端插入所述槽中并用胶水固定。 最后，将顶层（厚度d）与闪烁体晶体（10）分离，产生所需的闪烁体系。

公开(公告)号：US20070242804A1

公开(公告)日：2007-10-18

申请号：US10596026

申请日：2004-11-19

申请人： Gereon Vogtmeier ,  Ralf Dorscheid

发明人： Gereon Vogtmeier ,  Ralf Dorscheid

IPC分类号： G03B42/02 ,  H05K13/04

CPC分类号： A61B6/4233 ,  G01T1/2018 ,  G01T1/202 ,  Y10T29/5313

摘要： The present invention relates to a detector, in which detector modules are two-dimensionally arranged. The problem of the two-dimensional arrangement of detector modules is solved by a base structure (1) with guide elements (2) on which the detector modules (3) with at least one respective guide structure (4), are positioned relative to at least one of the respective guide elements, the guide elements (2) extending in a first direction (R1), at least two of the detector modules (3) being positioned consecutively on one of the guide elements (2) in the first direction (R1), and there are guide elements (2) that are separated from one another in a second direction (R2).

摘要翻译： 检测器技术领域本发明涉及检测器，其中检测器模块是二维布置的。 检测器模块的二维布置的问题通过具有引导元件（2）的基部结构（1）来解决，其上具有至少一个相应引导结构（4）的检测器模块（3）相对于其定位在其上 相应引导元件中的至少一个引导元件（2）在第一方向（R 1）上延伸，至少两个检测器模块（3）在第一方向上连续地定位在一个引导元件（2）上 （R 1），并且具有在第二方向（R 2）上彼此分离的引导元件（2）。