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    Methods of forming thermoelectric devices including superlattice structures of alternating layers with heterogeneous periods and related devices
    1.
    发明申请
    Methods of forming thermoelectric devices including superlattice structures of alternating layers with heterogeneous periods and related devices 审中-公开
    形成热电器件的方法包括具有异质周期的交替层的超晶格结构和相关器件

    公开(公告)号：US20070028956A1

    公开(公告)日：2007-02-08

    申请号：US11402546

    申请日：2006-04-12

    申请人： Rama Venkatasubramanian ,  Edward Siivola ,  Brooks O'Quinn ,  James Caylor ,  Jonathan Pierce

    发明人： Rama Venkatasubramanian ,  Edward Siivola ,  Brooks O'Quinn ,  James Caylor ,  Jonathan Pierce

    IPC分类号： H01L35/34 ,  H01L35/16

    CPC分类号： H01L35/16 ,  H01L35/26 ,  H01L35/34

    摘要： Forming a thermoelectric device may include forming a thermoelectric superlattice including a plurality of alternating layers of different thermoelectric materials wherein a period of the alternating layers varies over a thickness of the superlattice. More particularly, forming the superlattice may include depositing the superlattice on a single crystal substrate using epitaxial deposition. In addition, the single crystal substrate may be removed from the superlattice, and a second thermoelectric superlattice may be provided with the first and second thermoelectric superlattices having opposite conductivity types. Moreover, the first and second thermoelectric superlattices may be thermally coupled in parallel between two thermally conductive plates while electrically coupling the first and second thermoelectric superlattices in series. Related materials and devices and structures are also discussed.

    摘要翻译： 形成热电装置可以包括形成包括多个不同热电材料的交替层的热电超晶格，其中交替层的周期在超晶格的厚度上变化。 更具体地，形成超晶格可以包括使用外延沉积将超晶格沉积在单晶衬底上。 此外，可以从超晶格中去除单晶衬底，并且第二热电超晶格可以设置有具有相反导电类型的第一和第二热电超晶格。 此外，第一和第二热电超晶格可以在两个导热板之间并联热耦合，同时串联电耦合第一和第二热电超晶格。 还讨论了相关材料和装置和结构。

    Metalorganic Chemical Vapor Deposition of Zinc Oxide
    3.
    发明申请
    Metalorganic Chemical Vapor Deposition of Zinc Oxide 审中-公开
    金属有机化学气相沉积氧化锌

    公开(公告)号：US20090269879A1

    公开(公告)日：2009-10-29

    申请号：US12421133

    申请日：2009-04-09

    申请人： Bunmi T. Adekore ,  Jonathan Pierce

    发明人： Bunmi T. Adekore ,  Jonathan Pierce

    IPC分类号： H01L21/365 ,  C23C16/00

    CPC分类号： C23C16/407 ,  C23C16/4481 ,  H01L31/022466 ,  H01L31/1884 ,  Y02E10/50

    摘要： A method of metalorganic chemical vapor deposition includes converting a condensed matter source to provide a first gas, the source including at least one element selected from the group consisting of gold, silver and potassium. The method further includes providing a second gas comprising zinc and a third gas comprising oxygen, transporting the first gas, the second gas, and the third gas to a substrate, and forming a p-type zinc-oxide based semiconductor layer on the substrate.

    摘要翻译： 金属有机化学气相沉积的方法包括将凝结物质源转化为提供第一气体，所述源包括选自金，银和钾的至少一种元素。 该方法还包括提供包含锌的第二气体和包含氧的第三气体，将第一气体，第二气体和第三气体输送到衬底，以及在衬底上形成p型氧化锌基半导体层。

    Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices
    5.
    发明授权
    Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices 有权
    沉积具有减小的裂纹和/或表面缺陷密度的外延热电薄膜和相关器件的方法

    公开(公告)号：US07804019B2

    公开(公告)日：2010-09-28

    申请号：US12024475

    申请日：2008-02-01

    申请人： Jonathan Pierce ,  Robert P. Vaudo

    发明人： Jonathan Pierce ,  Robert P. Vaudo

    IPC分类号： H01L35/28 ,  H01L35/34 ,  H01L37/00

    CPC分类号： H01L35/34 ,  H01L35/32

    摘要： A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

    摘要翻译： 提供了一种基底，其包括生长表面，该生长表面相对于由约5度至约45度的切割角度的基底的结晶定向限定的平面而切除。 在生长表面上外延生长热电膜。 热电膜的晶体取向可相对于生长表面倾斜约5度至约30度。 衬底的生长表面也可以被图案化以在热电膜的外延生长之前限定从其突出的多个台面。 还讨论了相关方法和热电装置。

    METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED CRACK AND/OR SURFACE DEFECT DENSITIES AND RELATED DEVICES
    6.
    发明申请
    METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED CRACK AND/OR SURFACE DEFECT DENSITIES AND RELATED DEVICES 有权
    沉积具有减少裂纹和/或表面缺陷密度的外延热电片的方法和相关设备

    公开(公告)号：US20080185030A1

    公开(公告)日：2008-08-07

    申请号：US12024475

    申请日：2008-02-01

    申请人： Jonathan Pierce ,  Robert P. Vaudo

    发明人： Jonathan Pierce ,  Robert P. Vaudo

    IPC分类号： H01L35/28 ,  H01L35/34 ,  H01L37/00

    CPC分类号： H01L35/34 ,  H01L35/32

    摘要： A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

    摘要翻译： 提供了一种基底，其包括生长表面，该生长表面相对于由约5度至约45度的切割角度的基底的结晶定向限定的平面而切除。 在生长表面上外延生长热电膜。 热电膜的晶体取向可相对于生长表面倾斜约5度至约30度。 衬底的生长表面也可以被图案化以在热电膜的外延生长之前限定从其突出的多个台面。 还讨论了相关方法和热电装置。