公开(公告)号：US06777344B2

公开(公告)日：2004-08-17

申请号：US09782678

申请日：2001-02-12

申请人： Rao V. Annapragada ,  Ian J. Morey ,  Chok W. Ho

发明人： Rao V. Annapragada ,  Ian J. Morey ,  Chok W. Ho

IPC分类号： H01L21302

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： Process for stripping photoresist from a semiconductor wafer formed with at least one layer of OSG dielectric. The stripping process may be formed in situ or ex situ with respect to other integrated circuit fabrication processes. The process includes a reaction may be oxidative or reductive in nature. The oxidative reaction utilizes an oxygen plasma. The reductive reaction utilizes an ammonia plasma. The process of the present invention results in faster ash rates with less damage to the OSG dielectric than previously known stripping methods.

摘要翻译： 从形成有至少一层OSG电介质的半导体晶片剥离光致抗蚀剂的方法。 剥离过程可以相对于其它集成电路制造工艺原位或非原地形成。 该方法包括反应可以是氧化还原性的。 氧化反应利用氧等离子体。 还原反应使用氨等离子体。 本发明的方法导致更快的灰分速率，比以前已知的剥离方法对OSG电介质的损伤更小。

公开(公告)号：US07105454B2

公开(公告)日：2006-09-12

申请号：US10762969

申请日：2004-01-21

申请人： Chok W. Ho ,  Kuo-Lung Tang ,  Chung-Ju Lee

发明人： Chok W. Ho ,  Kuo-Lung Tang ,  Chung-Ju Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/31138 ,  H01L21/31144

摘要： Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.

公开(公告)号：US06893969B2

公开(公告)日：2005-05-17

申请号：US09782446

申请日：2001-02-12

申请人： Chok W. Ho ,  Kuo-Lung Tang ,  Chung-Ju Lee

发明人： Chok W. Ho ,  Kuo-Lung Tang ,  Chung-Ju Lee

IPC分类号： B44C1/22 ,  C03C15/00 ,  C23F1/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01K21/302

CPC分类号： H01L21/31138 ,  H01L21/31144

摘要： Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.

摘要翻译： 使用氨，NH 3作为活性蚀刻剂蚀刻有机低k电介质的方法。 使用氨的工艺导致有机低k电介质材料的蚀刻速率至少比使用N 2 / H 2化学物质在相似工艺条件下的蚀刻速率的两倍。 不同之处在于，在工艺化学中，NH 3与N 2的电离电位低得多，这在相似的工艺条件下导致显着更高的等离子体密度和蚀刻剂浓度。

公开(公告)号：US06620733B2

公开(公告)日：2003-09-16

申请号：US09782437

申请日：2001-02-12

申请人： Chok W. Ho

发明人： Chok W. Ho

IPC分类号： H01L21311

CPC分类号： H01L21/31144 ,  H01L21/31138

摘要： A method for etching features in an integrated circuit wafer, the wafer incorporating at least one dielectric layer is provided. Generally, the wafer is disposed within a reaction chamber. An etchant gas comprising a hydrocarbon additive and an active etchant is flowed into the reaction chamber. A plasma is formed from the etchant gas within the reaction chamber. The feature is etched in at least a portion of the dielectric layer.

摘要翻译： 提供了一种用于蚀刻集成电路晶片中的特征的方法，所述晶片包括至少一个电介质层。 通常，晶片设置在反应室内。 包含烃添加剂和活性蚀刻剂的蚀刻剂气体流入反应室。 等离子体由反应室内的蚀刻剂气体形成。 该特征在电介质层的至少一部分被蚀刻。

公开(公告)号：US06486070B1

公开(公告)日：2002-11-26

申请号：US09666762

申请日：2000-09-21

申请人： Chok W. Ho ,  Fang-Ju Lin ,  Chuan-Kai Lo

发明人： Chok W. Ho ,  Fang-Ju Lin ,  Chuan-Kai Lo

IPC分类号： H01L21302

CPC分类号： H01J37/321 ,  H01J2237/3347 ,  H01L21/31144 ,  H01L21/31612

摘要： An etch that provides a high oxide to photoresist selectivity in a low-pressure, high-density plasma is provided. An extremely high reverse RIE lag is achieved, wherein the etching of small high-aspect ratio openings is possible, but that of large openings is not. A high-density plasma is generated so that carbon monoxide (CO) is ionized to CO+ so that at least 1 sccm equivalent of CO+ is provided. Excited CO neutrals (CO*) are also present within the plasma. Fluorocarbon and hydrofluorocarbon gases are also provided. The excited CO neutrals scavenge free fluorine, near the wafer surface and in the large openings, increasing polymer deposition on the photoresist and in the large openings thus reduce or stop etching in those regions. Concurrently, CO+ is not hindered by diffusion limitation and is readily accelerated deep into the small openings by an applied electric potential; hence, providing oxygen atoms near the bottom of the small openings which help to remove polymer at the etch front and eliminates the propensity for etch stop.

摘要翻译： 提供了在低压，高密度等离子体中提供高氧化物至光致抗蚀剂选择性的蚀刻。 实现了极高的反向RIE滞后，其中小的高纵横比开口的蚀刻是可能的，但是大的开口的蚀刻是不可能的。 产生高密度等离子体，使得一氧化碳（CO）离子化为CO +，从而提供至少1sccm当量的CO +。 激发的CO中性粒子（CO *）也存在于等离子体中。 还提供氟碳和氢氟碳气体。 激发的CO中性粒子在晶片表面附近和大的开口中清除游离氟，增加了光致抗蚀剂上的聚合物沉积，并且在大的开口中增加了这些区域中的蚀刻。 同时，CO +不受扩散限制的阻碍，并且通过施加的电势容易地深入到小开口中; 因此，在小开口的底部附近提供氧原子，这有助于在蚀刻前沿去除聚合物并消除蚀刻停止的倾向。