公开(公告)号：US20150115342A1

公开(公告)日：2015-04-30

申请号：US14517657

申请日：2014-10-17

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori KAYA ,  Yasushi NAKAHARA ,  Azuma ARAYA ,  Ryo KANDA ,  Tomonobu KURIHARA ,  Tetsu TODA

IPC: H01L27/06 ,  H01L29/06

CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

Abstract: Provided is a semiconductor device including a substrate of a first conductivity type, a first circuit region, a separation region, a second circuit region, and a rectifying element. The rectifying element has a second conductivity type layer, a first high concentration second conductivity type region, a second high concentration second conductivity type region, an element isolation film, a first insulation layer, and a first conductive film. A first contact is coupled to the first high concentration second conductivity type region, and a second contact is coupled to the second high concentration second conductivity type region. A third contact is coupled to the first conductive film. The first contact, the second contact and the third contact are separated from each other.

Abstract translation: 提供了包括第一导电类型的衬底，第一电路区域，分离区域，第二电路区域和整流元件的半导体器件。 整流元件具有第二导电类型层，第一高浓度第二导电类型区域，第二高浓度第二导电类型区域，元件隔离膜，第一绝缘层和第一导电膜。 第一触点耦合到第一高浓度第二导电类型区域，第二触点耦合到第二高浓度第二导电类型区域。 第三触点耦合到第一导电膜。 第一触点，第二触点和第三触点彼此分离。